Conductive pattern forming method, semiconductor device, and electronic apparatus

Patent metadata

Field	Value
Publication number	US-2016013072-A1
Application number	US-201514790178-A
Country	US
Kind code	A1
Filing date	Jul 2, 2015
Priority date	Jul 10, 2014
Publication date	Jan 14, 2016
Grant date	—

Abstract

There is provided a conductive pattern forming method that can suppress shape abnormalities caused by the reattachment of a neodymium component. A conductive pattern forming method according to an aspect of the invention includes forming an aluminum-neodymium alloy film on a base material; forming, on the aluminum-neodymium alloy film, a conductive film having a thickness greater than or equal to ¼ times the thickness of the aluminum-neodymium alloy film; and patterning the aluminum-neodymium alloy film and the conductive film by using dry etching.

First claim

What is claimed is:

1 . A conductive pattern forming method comprising:
forming an aluminum-neodymium alloy film on a base material; forming, on the aluminum-neodymium alloy film, a conductive film having a thickness greater than or equal to ¼ times a thickness of the aluminum-neodymium alloy film; and patterning the aluminum-neodymium alloy film and the conductive film by using dry etching.

2 . The conductive pattern forming method according to claim 1 ,
wherein the conductive film contains titanium or titanium nitride.

3 . The conductive pattern forming method according to claim 2 , comprising,
prior to forming the aluminum-neodymium alloy film, forming a second conductive film on the base material, wherein, in forming the aluminum-neodymium alloy film, the aluminum-neodymium alloy film is formed on the second conductive film.

4 . The conductive pattern forming method according to claim 3 ,
wherein the second conductive film contains titanium.

5 . A semiconductor device comprising a conductive pattern formed by using the conductive pattern forming method according to claim 1 .

6 . An electronic apparatus comprising the semiconductor device according to claim 5 .

7 . A semiconductor device comprising
a conductive pattern including: an aluminum-neodymium alloy film; and a conductive film that is laminated on the aluminum-neodymium alloy film and has a thickness greater than or equal to ¼ times a thickness of the aluminum-neodymium alloy film.

8 . The semiconductor device according to claim 7 ,
wherein the conductive pattern constitutes at least one of a gate line and a source line.

9 . The semiconductor device according to claim 7 ,
wherein the aluminum-neodymium alloy film is formed on a barrier film, and the barrier film contains titanium.

10 . An electronic apparatus comprising the semiconductor device according to claim 7 .

Assignees

• Seiko Epson Corp

Inventors

• Sera Hiroshi

Classifications

• H10P50/267

  using plasmas · CPC title

• H10W20/4407 Primary

  Aluminium alloys · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/4403

  based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence) · CPC title

• H10P50/266 Primary

  by vapour etching only · CPC title