Solid-state image taking device and electronic apparatus

Patent metadata

Field	Value
Publication number	US-2016006959-A1
Application number	US-201514856064-A
Country	US
Kind code	A1
Filing date	Sep 16, 2015
Priority date	Mar 25, 2010
Publication date	Jan 7, 2016
Grant date	—

Abstract

A solid-state image taking device including a pixel section and a scan driving section wherein on each pixel column included in the pixel area determined in advance to serve as a pixel column having the unit pixels laid out in the scan direction, the opto-electric conversion section and the electric-charge holding section are laid out alternately and repeatedly, and on each of the pixel columns in the pixel area determined in advance, two the electric-charge holding sections of two adjacent ones of the unit pixels are laid out disproportionately toward one side of the scan direction with respect to the optical-path limiting section or the opto-electric conversion section.

First claim

What is claimed is:

1 . An imaging device comprising;
a first pixel unit including (a) a first photoelectric conversion element that generates a first signal, (b) a first memory that holds the first signal, and (c) a first transfer gate that transfers the first signal from the first photoelectric conversion element to the first memory; and a second pixel unit including (a) a second photoelectric conversion element that generates a second signal, (b) a second memory that holds the second signal, and (c) a second transfer gate that transfers the second signal from the second photoelectric conversion element to the first memory, wherein,
the first pixel unit is adjacent to the second pixel unit, and a distance between the first memory and the second photoelectric conversion element is longer than a distance between the first memory and the first photoelectric conversion element in a cross section view.

2 . The imaging device according to claim 1 , further comprising an element separation portion disposed between the first pixel unit and the second pixel unit.

3 . The imaging device according to claim 2 , the element separation portion is a LOCOS, or a STI, or a EDI, or a FLAT.

4 . The imaging device according to claim 2 , the element separation portion disposed between the first memory and the second photoelectric conversion element.

5 . The imaging device according to claim 1 , further comprising a first light shielding film disposed over the first memory.

6 . The imaging device according to claim 5 , wherein the first light shielding film is disposed over the element separation film, and a portion of the first photoelectric conversion element and the second photoelectric conversion element.

7 . The imaging device according to claim 1 , further comprising a first insulating film disposed between the first memory and the first transfer gate.

8 . The imaging device according to claim 5 , further comprising a second insulating film disposed between the first light shielding film and the first transfer gate.

9 . The imaging device according to claim 8 , wherein the first transfer gate is surrounded by the first and the second light shielding film and an element separation unit.

Assignees

• Sony Corp

Inventors

• Machida Takashi

Classifications

• H04N25/625

  for the control of smear · CPC title

• H04N23/73

  by influencing the exposure time · CPC title

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H04N25/65 Primary

  applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS · CPC title

• H04N25/771

  comprising storage means other than floating diffusion · CPC title