Semiconductor device and power conversion device
US-2024355888-A1 · Oct 24, 2024 · US
Semiconductor device
US2016005810A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016005810-A1 |
| Application number | US-201314768173-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 10, 2013 |
| Priority date | Mar 5, 2013 |
| Publication date | Jan 7, 2016 |
| Grant date | — |
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Abstract
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A highly reliable semiconductor device with high withstand voltage is provided. As means therefor, an impurity concentration in a first JTE region is set to 4.4×10 17 cm −3 or higher and 6×10 17 cm −3 or lower and an impurity concentration in a second JTE region is set to 2×10 17 cm −3 or lower in a case of a Schottky diode, and an impurity concentration in the first JTE region is set to 6×10 17 cm −3 or higher and 8×10 17 cm −3 or lower and an impurity concentration in the second JTE region is set to 2×10 17 cm −3 or lower in a case of a junction barrier Schottky diode.
First claim
Opening claim text (preview).
1 . A semiconductor device comprising: a main junction region on a drift region having an n-type conductivity; and a p-type JTE region formed adjacently around the main junction region, wherein the JTE region includes a first JTE region and a second JTE region having an impurity concentration lower than that of the first JTE region, the first JTE region is disposed so as to be sandwiched between the second JTE regions, an impurity concentration in the first JTE region is set to 4.4×10 17 cm −3 or higher and 8×10 17 cm −3 or lower and an impurity concentration in the second JTE region is set to 2×10 17 cm −3 or lower in a case of a Schottky diode, and an impurity concentration in the first JTE region is set to 6×10 17 cm −3 or higher and 8×10 17 cm −3 or lower and an impurity concentration in the second JTE region is set to 2×10 17 cm −3 or lower in a case of a junction barrier Schottky diode. 2 . The semiconductor device according to claim 1 , wherein a difference in impurity concentration between the first JTE region and the second JTE region at a p-n junction depth is made small. 3 . The semiconductor device according to claim 1 , wherein a ratio between width and space of the second JTE regions decreases in accordance with a distance from the main junction region.
Assignees
Inventors
Classifications
into crystalline silicon carbide · CPC title
of electrically active species · CPC title
to silicon carbide · CPC title
Electrodes comprising a Schottky barrier to a semiconductor · CPC title
Silicon carbide · CPC title
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- What does patent US2016005810A1 cover?
- A highly reliable semiconductor device with high withstand voltage is provided. As means therefor, an impurity concentration in a first JTE region is set to 4.4×10 17 cm −3 or higher and 6×10 17 cm −3 or lower and an impurity concentration in a second JTE region is set to 2×10 17 cm −3 or lower in a case of a Schottky diode, and an impurity concentration in the first JTE region is set to …
- Who is the assignee on this patent?
- Hitachi Power Semiconductor Device Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D62/106. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Jan 07 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).