Organic light emitting display and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-2016005804-A1
Application number	US-201514792117-A
Country	US
Kind code	A1
Filing date	Jul 6, 2015
Priority date	Jul 4, 2014
Publication date	Jan 7, 2016
Grant date	—

Abstract

A subpixel structure for a display device and a method of fabricating the display device are discussed. The subpixel structure can include a light emitting diode, a first switching transistor having a first gate electrode and a first active layer, a driving transistor having a second gate electrode and a second active layer, a second switching transistor including a third gate electrode and a third active layer, and at least one of the first, second and third gate electrodes is disposed between the corresponding first, second and third active layers and a substrate.

First claim

What is claimed is:

1 . A subpixel structure for a display device, the subpixel structure comprising:
a light emitting diode formed on a substrate; a first switching transistor including a first gate electrode connected to a first scan line, a first source electrode connected to a data line, a first drain electrode, and a first active layer forming a first channel part between the first source electrode and the first drain electrode; a driving transistor including a second gate electrode, a second drain electrode, and a second active layer forming a second channel part between the second source electrode and the second drain electrode, wherein the driving transistor is connected to the first switching transistor and the light emitting diode; a second switching transistor including a third gate electrode connected to a second scan line, a third source electrode, a third drain electrode, and a third active layer forming a third channel part between the third source electrode and the second drain electrode; and a storage capacitor connected to the first switching transistor and the driving transistor, wherein at least one of the first, second and third gate electrodes is disposed between the corresponding first, second and third active layers and the substrate.

2 . The subpixel structure according to claim 1 , wherein the storage capacitor includes a storage electrode in contact with the substrate and disposed under the light emitting diode and overlapping the second gate electrode.

3 . The subpixel structure according to claim 2 , wherein the substrate is a flexible substrate formed of a flexible material.

4 . The subpixel structure according to claim 2 , wherein the storage electrode overlapping the second gate electrode of the driving transistor includes an insulating film disposed therebetween to form the storage capacitor.

5 . The subpixel structure according to claim 1 , wherein each of the first and second scan lines comprises a dual layer structure including first and second line parts connected to each other and an insulating film disposed therebetween.

6 . The subpixel structure according to claim 1 , wherein the first, second and third active layers are formed on a gate insulating film and the gate insulating film is formed on the first, second and third gate electrodes.

7 . The subpixel structure according to claim 1 ,
wherein the storage electrode is disposed under the light emitting diode and overlaps with the second gate electrode of the driving transistor with a storage insulating film disposed therebetween to form the storage capacitor, and wherein each of the first and second scan lines comprises a dual layer structure including first and second line parts connected to each other and the storage insulating film disposed therebetween.

8 . The subpixel structure according to claim 1 , wherein at least one of the first, second and third active layers is made of polycrystalline silicone.

9 . The subpixel structure according to claim 1 , further comprising an anode electrode connected to the storage electrode through a drain contact hole.

10 . A display device comprising:
a display panel including a plurality of pixels, at least one pixel of the plurality of pixels including the subpixel structure according to claim 1 .

11 . The display device according to claim 10 , wherein the storage capacitor includes a storage electrode in contact with the substrate and disposed under the light emitting diode and overlapping the second gate electrode.

12 . The display device according to claim 11 , wherein the storage electrode overlapping the second gate electrode of the driving transistor includes an insulating film disposed therebetween to form the storage capacitor.

13 . The display device according to claim 10 , wherein each of the first and second scan lines comprises a dual layer structure including first and second line parts connected to each other and an insulating film disposed therebetween.

14 . The display device according to claim 10 , wherein the substrate is a flexible substrate formed of a flexible material, and
wherein the first, second and third active layers are formed on a gate insulating film and the gate insulating film is formed on the first, second and third gate electrodes.

15 . The display device according to claim 10 ,
wherein the storage electrode overlaps with the second gate electrode of the driving transistor with a storage insulating film disposed therebetween to form the storage capacitor, and wherein each of the first and second scan lines comprises a dual layer structure including first and second line parts connected to each other and the storage insulating film disposed therebetween.

16 . The display device according to claim 10 , wherein the at least one pixel of the plurality of pixels includes a plurality of subpixels, each subpixel having a scan contact hole formed in a corresponding subpixel area comprising a connection electrode connected to the first scan line.

17 . The display device according to claim 10 , wherein the at least one pixel of the plurality of pixels includes a plurality of adjacent subpixels, and every other adjacent subpixel includes a scan contact hole formed in a corresponding subpixel area comprising a connection electrode connected to the first scan line.

18 . A method of fabricating a display, the method comprising:
forming a first storage electrode on a substrate by a first mask process; forming a storage insulating film over the first storage electrode; stacking a gate metal layer on the storage insulating film; patterning the gate metal layer using a second mask to form first, second and third gate electrodes; forming a gate insulating film on the first, second and third gate electrodes; forming an active layer on the gate insulating film; and patterning the active layer using a third mask to form first, second and third active layers corresponding to the first, second and third gate electrodes, respectively.

19 . The method of claim 18 , wherein the second gate electrode is disposed between the first storage electrode and the second active layer to form both a storage capacitor and a driving transistor.

20 . The method of claim 18 , wherein the substrate is a flexible substrate formed of a flexible material, and
wherein the storage electrode is disposed in contact with the substrate and configured to block impurities introduced from the substrate.

Assignees

• Lg Display Co Ltd

Inventors

• Oh Kum-Mi
• Son Kyung-Mo
• Kim Sung-Hoon

Classifications

• H01L51/5206

  Electricity · mapped topic

• H01L51/56

  Electricity · mapped topic

• H01L2227/323

  Electricity · mapped topic

• H01L29/04

  Electricity · mapped topic

• H01L2251/5338

  Electricity · mapped topic