Semiconductor device and method for making semiconductor device

Patent metadata

Field	Value
Publication number	US-2016005708-A1
Application number	US-201514755334-A
Country	US
Kind code	A1
Filing date	Jun 30, 2015
Priority date	Jul 4, 2014
Publication date	Jan 7, 2016
Grant date	—

Abstract

A semiconductor device includes: a substrate including a base member having a main surface and a back surface facing opposite in a thickness direction; a semiconductor element mounted on the main surface of the substrate and having at least one element pad; a wire having a bonding portion bonded to the element pad; and a sealing resin formed on the main surface of the substrate for covering the wire and at least a portion of the semiconductor element. The semiconductor element has an element exposed side surface that faces in a direction crossing the thickness direction of the substrate and is exposed from the sealing resin.

First claim

1 . A semiconductor device comprising:
a substrate including a base member having a main surface and a back surface facing opposite in a thickness direction; a semiconductor element having at least one element pad and mounted on the main surface of the substrate; a wire having a bonding portion bonded to the element pad; and a sealing resin formed on the main surface of the substrate, and covering the wire and at least a portion of the semiconductor element, wherein the semiconductor element includes an element exposed surface that faces in a direction crossing the thickness direction of the substrate and is exposed from the sealing resin.

2 . The semiconductor device according to claim 1 , wherein the base member includes a substrate outer side surface that connects the main surface and the back surface to each other and is flush with the element exposed side surface of the semiconductor element.

3 . The semiconductor device according to claim 2 , wherein the sealing resin has a sealing resin outer surface flush with both the element exposed side surface of the semiconductor element and the substrate outer side surface of the base member.

4 . The semiconductor device according to claim 1 , wherein the element exposed side surface of the semiconductor element is perpendicular to the thickness direction of the substrate.

5 . The semiconductor device according to claim 1 , wherein the semiconductor element has a first main portion and a second main portion.

6 . The semiconductor device according to claim 5 , wherein the element exposed side surface is formed on the first main portion.

7 . The semiconductor device according to claim 6 , wherein the first main portion is formed of a semiconductor.

8 . The semiconductor device according to claim 5 , wherein the second main portion has a bonding surface on which the element pad is formed.

9 . The semiconductor device according to claim 8 , wherein the second main portion is formed of an insulating material.

10 . The semiconductor device according to claim 9 , wherein the second main portion is formed of a resin.

11 . The semiconductor device according to claim 5 , wherein the first main portion and the second main portion are arranged side by side in a direction in which the element exposed side surface faces.

12 . The semiconductor device according to claim 11 , wherein a dimension of the first main portion in the thickness direction of the substrate is greater than a dimension of the first main portion in a direction in which the element exposed side surface faces.

13 . The semiconductor device according to claim 11 , wherein a dimension of the second main portion in the thickness direction of the substrate is greater than a dimension of the second main portion in a direction in which the element exposed side surface faces.

14 . The semiconductor device according to claim 12 , wherein a dimension of the semiconductor element in the thickness direction of the substrate is greater than a dimension of the semiconductor element in a direction in which the element exposed side surface faces.

15 . The semiconductor device according to claim 1 , wherein the semiconductor element is bonded to the substrate by a bonding member.

16 . The semiconductor device according to claim 15 , wherein the bonding member is an insulating bonding member.

17 . The semiconductor device according to claim 15 , wherein the bonding member is a conductive bonding member.

18 . The semiconductor device according to claim 15 , wherein the bonding member has a bonding member exposed side surface flush with the element exposed side surface.

19 . The semiconductor device according to claim 1 , wherein the semiconductor element is a direction sensor element including a detection reference axis in the first main portion.

20 . The semiconductor device according to claim 19 , wherein the detection reference axis is parallel to the thickness direction of the substrate.

21 . A method for making a semiconductor device, the method comprising:
mounting a semiconductor element on a main surface of a substrate, the semiconductor element having an element pad; bonding a wire to the element pad; forming a sealing resin covering the semiconductor element and the wire; and simultaneously cutting the substrate, the semiconductor element and the sealing resin.

22 . The method according to claim 21 , wherein in the mounting the semiconductor element, the semiconductor element is bonded to the substrate by a bonding member, and
in the cutting, the substrate, the semiconductor element, the sealing resin and the bonding member are simultaneously cut.

Assignees

• Rohm Co Ltd

Inventors

• Nishiyama Yuto
• Haga Motoharu

Classifications

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10W90/755

  between a chip and a laterally-adjacent insulating package substrate, interpose or RDL · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/752

  between stacked chips · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title