Method for forming aligned oxide semiconductor wire pattern and electronic device using same

Patent metadata

Field	Value
Publication number	US-2016005599-A1
Application number	US-201414768265-A
Country	US
Kind code	A1
Filing date	Feb 18, 2014
Priority date	Feb 18, 2013
Publication date	Jan 7, 2016
Grant date	—

Abstract

A method for forming an aligned oxide semiconductor wire pattern includes: dissolving an oxide semiconductor precursor and an organic polymer in distilled water or an organic solvent to provide a composite solution of an oxide semiconductor precursor/organic polymer; continuously discharging the composite solution of the oxide semiconductor precursor/organic polymer in a vertical upper direction from a substrate to align an oxide semiconductor precursor/organic polymer composite wire on the substrate; and heating the oxide semiconductor precursor/organic polymer composite wire to remove the organic polymer and converting the oxide semiconductor precursor into an oxide semiconductor to form an aligned oxide semiconductor wire pattern.

First claim

1 . A method for forming an aligned oxide semiconductor wire pattern, comprising:
dissolving an oxide semiconductor precursor and an organic polymer in distilled water or an organic solvent to provide a composite solution of an oxide semiconductor precursor/organic polymer; continuously discharging the composite solution of the oxide semiconductor precursor/organic polymer in a vertical upper direction from a substrate to align an oxide semiconductor precursor/organic polymer composite wire on the substrate; and heating the oxide semiconductor precursor/organic polymer composite wire to remove the organic polymer and converting the oxide semiconductor precursor into an oxide semiconductor to form an aligned oxide semiconductor wire pattern.

2 . The method of claim 1 , wherein the discharging of the oxide semiconductor precursor/organic polymer composite solution comprises discharging the composite solution at a position 10 μm to 20 mm apart from the substrate in a vertical upper direction.

3 . The method for of claim 1 , wherein the aligned oxide semiconductor wire pattern is formed by heating the oxide semiconductor precursor/organic polymer composite wire at a temperature ranging from 100° C. to 900° C. for 1 minute to 24 hours.

4 . The method of claim 1 , wherein aligning the oxide semiconductor precursor/organic polymer composite wire is performed by an electric field auxiliary robotic nozzle printer, wherein the electric field auxiliary robotic nozzle printer comprises:
i) a solution storage unit receiving an oxide semiconductor precursor/organic polymer composite solution; ii) a nozzle unit configured to discharge the solution supplied from the solution storage unit; iii) a voltage applying unit configured to apply a high voltage to the nozzle; iv) a collector fixing the substrate; v) a robot stage configured to transfer the collector in a horizontal direction; vi) a micro-distance controller configured to transfer the collector in a vertical direction; and vii) a base plate supporting the collector.

5 . The method of claim 4 , wherein
the aligning the oxide semiconductor precursor/organic polymer composite wire comprises: i) supplying the oxide semiconductor precursor/organic polymer composite solution to the solution storage unit of the electric field auxiliary robotic nozzle printer; and ii) applying a high voltage to the nozzle through the voltage applying unit of the electric field auxiliary robotic nozzle printer to discharge the oxide semiconductor precursor/organic polymer composite solution from the nozzle, wherein when the oxide semiconductor precursor/organic polymer composite solution is discharged and forms a Taylor cone at the end of the nozzle, a continuously connected oxide semiconductor precursor/organic polymer composite wire is aligned on a substrate by moving the substrate while the oxide semiconductor precursor/organic polymer composite solution is discharged in a vertical upper direction from the substrate to form a continuously connected wire.

6 . The method of claim 1 , wherein the substrate is selected from the group consisting of an insulation material, a metal material, a carbon material, a composite material of a conductor and an insulation layer, and a combination thereof.

7 . The method of claim 1 , wherein the oxide semiconductor precursor is selected from the group consisting of a zinc oxide precursor, an indium oxide precursor, a tin oxide precursor, a gallium oxide precursor, a tungsten oxide precursor, an aluminum oxide precursor, a titanium oxide precursor, a vanadium oxide precursor, a molybdenum oxide precursor, a copper oxide precursor, a nickel oxide precursor, an iron oxide precursor, a chromium oxide precursor, a bismuth oxide precursor, and a combination thereof.

8 - 21 . (canceled)

22 . The method of claim 1 , wherein the organic polymer is selected from the group consisting of polyvinyl alcohol (PVA), polyethylene oxide (PEO), polystyrene (PS), polycaprolactone (PCL), polyacrylonitrile (PAN), poly(methyl methacrylate) (PMMA), polyimide, poly(vinylidene fluoride) (PVDF), polyaniline (PANI), polyvinylchloride (PVC), nylon, poly(acrylic acid), poly(chloro styrene), poly(dimethyl siloxane), poly(ether imide), poly(ether sulfone), poly(alkyl acrylate), poly(ethyl acrylate), poly(ethyl vinyl acetate), poly(ethyl-co-vinyl acetate), poly(ethylene terephthalate), poly(lactic acid-co-glycolic acid), a poly(methacrylate) salt, poly(methyl styrene), a poly(styrene sulfonate) salt, poly(styrene sulfonyl fluoride), poly(styrene-co-acrylonitrile), poly(styrene-co-butadiene), poly(styrene-co-divinyl benzene), poly(vinyl acetate), polylactide, poly(vinyl alcohol), polyacrylamide, polybenzimidazole, polycarbonate, poly(dimethylsiloxane-co-polyethyleneoxide), poly(etheretherketone), polyethylene, polyethyleneimine, polyisoprene, polylactide, polypropylene, polysulfone, polyurethane, poly(vinylpyrrolidone), poly(phenylene vinylene), poly(vinyl carbazole), and a combination thereof.

23 . The method of claim 1 , wherein the organic solvent is selected from the group consisting of dichloroethylene, trichloroethylene or chloroform, chlorobenzene, dichlorobenzene, dichloromethane, styrene, dimethylformamide, dimethylsulfoxide, tetrahydrofuran, xylene, toluene, cyclohexene, 2-methoxyethanol, ethanolamine, acetonitrile, butylalcohol, isopropylalcohol, ethanol, methanol, and acetone, and a combination thereof.

24 . The method of claim 1 , wherein the oxide semiconductor precursor/organic polymer composite solution is provided by dissolving the oxide semiconductor precursor and the organic polymer in a weight ratio of 10:90 to 97:3 to have a concentration ranging from 1 to 30 wt % in distilled water or the organic solvent.

25 . The method of claim 1 , wherein a diameter of the oxide semiconductor wire is 10 nm to 1000 μm.

26 . An article comprising the aligned oxide semiconductor wire formed according to the method according to claim 1 .

27 . (canceled)

28 . The article according to claim 26 , wherein the article is a CMOS sensor.

29 . The article according to claim 26 , wherein the article is a solar cell.

30 . The article according to claim 26 , wherein the article is a light emitting transistor.

31 . The article according to claim 26 , wherein the article is a laser device.

32 . The article according to claim 26 , wherein the article is a memory.

33 . The article according to claim 26 , wherein the article is a piezoelectric device.

34 - 36 . (canceled)

37 . The article according to claim 26 , wherein the article is a field effect transistor.

38 . The article according to claim 26 , wherein the article is a gas sensor.

Assignees

• Postech Acad Ind Found

Inventors

• Lee Tae-Woo
• Min Sung-Yong

Classifications

• H10P14/3462

  Nanowires · CPC title

• H10P14/3451

  Structure · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/265

  using solutions · CPC title

• H10P14/27

  using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials · CPC title