Microwave rapid thermal processing of electrochemical devices

US2016002771A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016002771-A1
Application numberUS-201514853551-A
CountryUS
Kind codeA1
Filing dateSep 14, 2015
Priority dateMay 21, 2008
Publication dateJan 7, 2016
Grant date

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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Abstract

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Microwave radiation may be applied to electrochemical devices for rapid thermal processing (RTP) (including annealing, crystallizing, densifying, forming, etc.) of individual layers of the electrochemical devices, as well as device stacks, including bulk and thin film batteries and thin film electrochromic devices. A method of manufacturing an electrochemical device may comprise: depositing a layer of the electrochemical device over a substrate; and microwave annealing the layer, wherein the microwave annealing includes selecting annealing conditions with preferential microwave energy absorption in the layer. An apparatus for forming an electrochemical device may comprise: a first system to deposit an electrochemical device layer over a substrate; and a second system to microwave anneal the layer, wherein the second system is configured to provide preferential microwave energy absorption in the device layer.

First claim

Opening claim text (preview).

What is claimed is: 1 . A method of manufacturing an electrochemical device comprising: depositing an electrochemical device stack over a substrate; and microwave annealing a layer in said electrochemical device stack, wherein said microwave annealing includes selecting annealing conditions with preferential microwave energy absorption in said layer, said layer reaching an annealing temperature, T, while surrounding layers in said electrochemical device stack experience a temperature less than T. 2 . The method as in claim 1 , wherein said electrochemical device is a thin film battery. 3 . The method as in claim 1 , wherein said electrochemical device is an electrochromic device. 4 . The method as in claim 1 , wherein said electrochemical device is a thick film battery. 5 . The method as in claim 2 , wherein said layer is a cathode layer and said microwave annealing crystallizes said cathode layer, and wherein said cathode layer is deposited on a cathode current collector, said cathode current collector being deposited on said substrate. 6 . The method as in claim 5 , wherein said cathode layer is a LiCoO 2 layer. 7 . The method as in claim 6 , wherein said LiCoO 2 layer is deposited by physical vapor deposition. 8 . The method as in claim 3 , wherein said layer is an upper transparent conductive oxide (TCO) layer and said microwave annealing improves optical transmittance and electrical conductivity of said upper TCO layer, and wherein said upper TCO layer is deposited on an electrochromic device stack including a lower TCO layer, a cathode, a solid state electrolyte and an anode. 9 . The method as in claim 8 , wherein said upper TCO layer is an indium tin oxide (ITO) layer. 10 . The method as in claim 9 , wherein said ITO layer is sputter deposited. 11 . The method as in claim 3 , wherein said layer is an electrode including nickel oxide and said microwave annealing forms said electrode. 12 . The method as in claim 11 , wherein said electrode is deposited on an electrochromic device stack including a lower TCO layer, a cathode and a solid state electrolyte. 13 . The method as in claim 11 , wherein said electrode is deposited on a lower TCO layer. 14 . The method as in claim 4 , wherein said thick film battery is a lithium ion battery, said layer is a lithium ion cathode deposited as a slurry and said microwave annealing dries and forms said cathode. 15 . An apparatus for forming an electrochemical device, comprising: a first system to deposit an electrochemical device stack over a substrate; and a second system to microwave anneal a layer in said electrochemical device stack, wherein said second system is configured to provide preferential microwave energy absorption in said layer, said layer reaching an annealing temperature, T, while surrounding layers in said electrochemical device stack experience a temperature less than T. 16 . The apparatus as in claim 15 , wherein said electrochemical device is a thin film battery, said first system is a system configured to deposit a cathode layer on a cathode current collector formed on a substrate, and said second system is configured to crystallize said cathode layer. 17 . The apparatus as in claim 15 , wherein said electrochemical device is an electrochromic device, said first system is a system configured to deposit an upper transparent conductive oxide (TCO) layer on an electrochromic device stack on said substrate, said stack including a lower TCO layer, a cathode, a solid state electrolyte and an anode and said second system is configured to improve the optical transmittance and electrical conductivity of said upper TCO layer. 18 . The apparatus as in claim 15 , wherein said electrochemical device is an electrochromic device, said first system is a system configured to deposit a nickel oxide electrode on an electrochromic device stack on said substrate, said stack including a lower TCO layer, an electrode and a solid state electrolyte formed on said substrate and said second system is configured to form said nickel oxide electrode, wherein said nickel oxide electrode is an electrode including nickel oxide. 19 . The apparatus as in claim 15 , wherein said electrochemical device is an electrochromic device, said first system is a system configured to deposit a nickel oxide electrode on an electrochromic device stack on said substrate, said stack including a lower TCO layer and said second system is configured to form said nickel oxide electrode, wherein said nickel oxide electrode is an electrode including nickel oxide. 20 . The apparatus as in claim 15 , wherein said electrochemical device is a lithium ion battery, said first system is a system configured to deposit a layer of cathode material as a slurry and said second system is configured to dry and form said cathode material.

Assignees

Inventors

Classifications

  • Sputtering · CPC title

  • Sputtering · CPC title

  • Physical vapour deposition · CPC title

  • using pulsed power to the target · CPC title

  • Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx · CPC title

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What does patent US2016002771A1 cover?
Microwave radiation may be applied to electrochemical devices for rapid thermal processing (RTP) (including annealing, crystallizing, densifying, forming, etc.) of individual layers of the electrochemical devices, as well as device stacks, including bulk and thin film batteries and thin film electrochromic devices. A method of manufacturing an electrochemical device may comprise: depositing a l…
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification C23C14/5806. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu Jan 07 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).