Thin film type capacitor element and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-2015380167-A1
Application number	US-201514742355-A
Country	US
Kind code	A1
Filing date	Jun 17, 2015
Priority date	Jun 25, 2014
Publication date	Dec 31, 2015
Grant date	—

Abstract

Disclosed herein is a thin film type capacitor element, including: a body part formed by stacking a plurality of dielectric layers; a first internal electrode provided in the body part and including a first non-plated region; a second internal electrode including a second non-plated region; a first via formed in the first non-plated region; and a second via formed in the second non-plated region.

First claim

What is claimed is:

1 . A thin film type capacitor element, comprising:
a body part formed by stacking a plurality of dielectric layers; a first internal electrode stacked between the dielectric layers and including a first non-plated region; a second internal electrode stacked between the dielectric layers and including a second non-plated region; a first via formed in the first non-plated region and penetrating through the second internal electrode and the dielectric layer; and a second via formed in the second non-plated region and penetrating through the first internal electrode and the dielectric layer.

2 . The thin film type capacitor element according to claim 1 , wherein the first non-plated region and the second non-plated region are formed at positions that are not overlapped with each other.

3 . The thin film type capacitor element according to claim 1 , wherein the first non-plated region is formed at an edge of the first internal electrode.

4 . The thin film type capacitor element according to claim 1 , wherein the second non-plated region is formed at an edge of the second internal electrode.

5 . The thin film type capacitor element according to claim 1 , wherein the first non-plated region and the second non-plated region are disposed at positions that are opposite to each other.

6 . The thin film type capacitor element according to claim 5 , wherein the first non-plated region and the second non-plated region are symmetrical with each other in a horizontal or vertical direction.

7 . The thin film type capacitor element according to claim 5 , wherein the first non-plated region and the second non-plated region are symmetrical with each other in a diagonal direction.

8 . The thin film type capacitor element according to claim 1 , wherein the first and second non-plated regions are formed in a shape of a quadrangular shape, a triangular shape, or a circular shape.

9 . The thin film type capacitor element according to claim 1 , wherein an area of the first non-plated region has a minimum value within a range that is larger than a horizontal cross-section area of the first via, and an area of the second non-plated region has a minimum value within a range that is larger than a horizontal cross-section area of the second via.

10 . The thin film type capacitor element according to claim 1 , wherein the first non-plated region and the second non-plated region are formed in the same shape as each other.

11 . A method of manufacturing a thin film type capacitor element, the method comprising:
forming a body part by alternately stacking a first internal electrode including a first non-plated region and a second internal electrode including a second non-plated region while having a dielectric layer therebetween; forming a first via hole penetrating through the body part in a vertical direction in the first non-plated region and a second via hole penetrating through the body part in the vertical direction in the second non-plated region; and forming a first via by plating an inner portion of the first via hole and forming a second via by plating an inner portion of the second via hole.

12 . The method according to claim 11 , wherein in the forming of the first internal electrode, a first mask including a frame part and a plating prevention part having a shape corresponding to the first non-plated region is disposed on the dielectric layer and a metal material is then deposited thereon by a thin film process; and,
wherein in the forming of the second internal electrode, a second mask including a frame part and a plating prevention part having a shape corresponding to the second non-plated region is disposed on the dielectric layer and a metal material is then deposited thereon by a thin film process.

13 . The method according to claim 12 , wherein a plating prevention part of a first mask and a plating prevention part of a second mask are provided to positions that are opposite to each other.

14 . The method according to claim 13 , wherein the plating prevention part of the first mask and the plating prevention part of the second mask are symmetrical with each other in a horizontal or vertical direction.

15 . The method according to claim 13 , wherein the plating prevention part of the first mask and the plating prevention part of the second mask are symmetrical with each other in a diagonal direction.

Assignees

• Samsung Electro Mech

Inventors

• Lim Jong Bong
• Lee Hai Joon
• Kim Doo Young
• Kim Chang Hoon

Classifications

• H01G4/2325

  characterised by the material of the terminals · CPC title

• H01G4/232

  electrically connecting two or more layers of a stacked or rolled capacitor · CPC title

• H01G4/30

  Stacked capacitors (H01G4/33 takes precedence) · CPC title

• H01G4/012 Primary

  Form of non-self-supporting electrodes · CPC title

• H01G4/005

  Electrodes · CPC title