Semiconductor device and method for producing semiconductor device

Patent metadata

Field	Value
Publication number	US-2015325538-A1
Application number	US-201514699411-A
Country	US
Kind code	A1
Filing date	Apr 29, 2015
Priority date	May 12, 2014
Publication date	Nov 12, 2015
Grant date	—

Abstract

The method for producing a semiconductor device includes: forming an opening in an area of at least one of the complementary metal-oxide semiconductor wafer that includes a first part and the other semiconductor wafer that includes a second part, the opening terminating within the area and not penetrating through the area, the area including corresponding one of the first part and the second part and an outer peripheral part of the corresponding one of the first part and the second part; forming a conduction hole within the first part, the conduction hole communicating with a metallic material in the complementary metal-oxide semiconductor wafer; arranging a first joining material inside the conduction hole and on the first part, and a second joining material on the second part; and joining the arranged first joining material and the arranged second joining material.

First claim

What is claimed is:

1 . A method for producing a semiconductor device that comprises a complementary metal-oxide semiconductor wafer and another semiconductor wafer, the complementary metal-oxide semiconductor wafer including a protective coating, the method comprising:
forming an opening in an area of at least one of the complementary metal-oxide semiconductor wafer that includes a first part and the other semiconductor wafer that includes a second part, the opening terminating within the area and not penetrating through the area, the area including corresponding one of the first part and the second part and an outer peripheral part of the corresponding one of the first part and the second part, the first part including a part of a surface of the complementary metal-oxide semiconductor wafer on which the protective coating is located and a part of the complementary metal-oxide semiconductor wafer continuing inward from the part of the surface, the second part including a part of a surface of the other semiconductor wafer and a part of the other semiconductor wafer continuing inward from the part of the surface; forming a conduction hole within the first part, the conduction hole communicating with a metallic material in the complementary metal-oxide semiconductor wafer; arranging a first joining material inside the conduction hole and on the first part, and a second joining material on the second part; and joining the arranged first joining material and the arranged second joining material.

2 . The method as in claim 1 , wherein
the forming of the opening includes forming the opening in the area including the first part and the outer peripheral part of the first part.

3 . The method as in claim 1 , further comprising:
forming a groove surrounding an entire circumference of the at least one of the first part and the second part, the groove being located outside the at least one of the first part and the second part and inside the opening, wherein the forming of the groove is performed before the joining.

4 . A semiconductor device comprising:
a complementary metal-oxide semiconductor wafer; and another semiconductor wafer, wherein the complementary metal-oxide semiconductor wafer comprises:
a protective coating located on a surface of the complementary metal-oxide semiconductor wafer;
a metallic material located in the complementary metal-oxide semiconductor wafer;
a conduction hole communicating with the metallic material from a first surface being a surface on which the protective coating is located; and
a first joining material located in the conduction hole and on the first surface,
the other semiconductor wafer comprises a second joining material located on a second surface of the other semiconductor wafer and joined to the first joining material, and the semiconductor device comprises an opening on at least one of the first surface of the complementary metal-oxide semiconductor and the second surface of the other semiconductor, the opening terminating within and not penetrating through the corresponding one of the complementary metal-oxide semiconductor wafer and the other semiconductor wafer, wherein the first joining material and the second joining material fill at least a part of the opening is located on the at least one of the first surface and the second surface.

5 . The semiconductor device as in claim 4 , comprising the opening on the first surface, the opening terminating within and not penetrating through the complementary metal-oxide semiconductor wafer.

6 . The semiconductor device as in claim 4 , further comprising:
a groove surrounding an entire circumference of a specific region inside the opening.

Assignees

• Toyota Motor Co Ltd

Inventors

• Asaoka Kazuya
• Fujitsuka Norio
• Ozaki Takashi
• Ao Kenichi

Classifications

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• H10W90/792

  between multiple chips · CPC title

• H10W90/732

  between stacked chips · CPC title

• H10W90/722

  between stacked chips · CPC title

• H10W90/20

  Configurations of stacked chips · CPC title