Semiconductor device

Patent metadata

Field	Value
Publication number	US-2015262922-A1
Application number	US-201514593689-A
Country	US
Kind code	A1
Filing date	Jan 9, 2015
Priority date	Mar 13, 2014
Publication date	Sep 17, 2015
Grant date	—

Abstract

A QFP has a die pad on which a semiconductor chip is mounted, a plurality of inner parts disposed around the die pad, a plurality of outer parts respectively connected with the plurality of inner parts, a plurality of wires electrically connect the bonding pads of the semiconductor chip and the plurality of inner parts, and a sealing body that seals the semiconductor chip. Moreover, the thickness of the semiconductor chip is larger than a thickness from a lower surface of the die pad to a lower surface of the sealing body, and a distance from the lower surface of the sealing body to a tip portion of each of the plurality of outer parts is larger than a thickness of the sealing body from a main surface of the semiconductor chip to an upper surface of the sealing body.

First claim

What is claimed is:

1 . A semiconductor device comprising:
a die pad including a first surface and a second surface opposite to the first surface; a semiconductor chip including a main surface, a plurality of bonding electrodes formed on the main surface and a back surface opposite to the main surface, and mounted on the first surface of the die pad via a die bond material such that the back surface faces the first surface of the die pad; a plurality of leads electrically connected with the plurality of bonding electrodes via a plurality of wires, respectively; and a sealing body including an upper surface positioned on the main surface side of the semiconductor chip, a lower surface opposite to the upper surface and a side surface located between the upper surface and the lower surface, and sealing the die pad, the semiconductor chip and the plurality of wires such that a part of each of the plurality of leads protrudes from the side surface, wherein the part of each of the plurality of leads is bent on an outside of the sealing body, a thickness of the semiconductor chip is larger than a thickness from the second surface of the die pad to the lower surface of the sealing body, and a distance from the lower surface of the sealing body to a tip portion of the part of each of the plurality of leads is larger than a thickness of the sealing body from the main surface of the semiconductor chip to the upper surface of the sealing body.

2 . The semiconductor device according to claim 1 ,
wherein the sealing body is made of thermosetting epoxy-based resin, the semiconductor chip includes a base material, made of silicon and a multilayer wiring layer that is formed on an element formation surface of the base material and thinner than the thickness of the base material, and a linear expansion coefficient of the semiconductor chip is smaller than a linear expansion coefficient of the sealing body.

3 . The semiconductor device according to claim 1 ,
wherein each of the plurality of leads includes a wire joint portion to which the wire is bonded, a first bending portion that is bent toward a thickness direction of the sealing body and a second bending portion that is bent toward a direction in parallel with the upper surface of the sealing body, and a distance from the lower surface of the sealing body to the second bending portion of each of the plurality of leads is larger than a thickness from an upper surface of the wire joint portion of each of the plurality of leads to the upper surface of the sealing body or a thickness from a lower surface of the wire joint portion of each of the plurality of leads to the lower surface of the sealing body.

4 . The semiconductor device according to claim 1 ,
wherein each of the plurality of leads includes a wire joint portion to which the wire is bonded, a first bending portion that is bent toward a thickness direction of the sealing body and a second bending portion that is bent toward a direction in parallel with the upper surface of the sealing body, the wire joint portion is sealed with the sealing body, each of the first bending portion and the second bending portion is exposed from the sealing body, the first bending portion is disposed so as to be spaced apart from the semiconductor chip compared with the wire joint portion, and the second bending portion is disposed so as to be spaced apart from the semiconductor chip compared with the first bending portion.

5 . The semiconductor device according to claim 1 ,
wherein the thickness of the semiconductor chip is larger than a thickness of the sealing body from the main surface of the semiconductor chip to the upper surface of the sealing body.

6 . The semiconductor device according to claim 1 ,
wherein a distance from the lower surface of the sealing body to the tip portion of the part of each of the plurality of leads is larger than the thickness of the semiconductor chip.

Assignees

• Renesas Electronics Corp

Inventors

• Takahashi Noriyuki

Classifications

• H10W72/5522

  comprising gold [Au] · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W74/10

  characterised by their shape or disposition · CPC title

• H10W72/075

  of bond wires · CPC title

• H10W72/073

  of die-attach connectors · CPC title