Method for manufacturing semiconductor film

Patent metadata

Field	Value
Publication number	US-2015171257-A1
Application number	US-201314404415-A
Country	US
Kind code	A1
Filing date	Apr 11, 2013
Priority date	Jun 29, 2012
Publication date	Jun 18, 2015
Grant date	—

Abstract

An object of the present invention is to provide a method for manufacturing a semiconductor film capable of manufacturing a ZnMgO film in which the adding amount of Mg to Zn is more than 20 mol %, by means of a liquid phase deposition method. The present invention is a method for manufacturing a semiconductor film including a first step of preparing a mixture liquid including zinc hydroxide, magnesium hydroxide, and a liquid, a second step of applying a member to be film-deposited to the mixed liquid, and a third step of heating the member to be film-deposited to which the mixed liquid is applied, having a temperature range from 300° C. to 400° C. for 100/30 minutes or less.

First claim

1 . A method for manufacturing a semiconductor film, the method comprising: a first step of preparing a mixed liquid including zinc hydroxide, magnesium hydroxide, and a liquid; a second step of applying the mixed liquid to a member to be film-deposited; and a third step of heating the member to be film-deposited to which the mixed liquid is applied, having a temperature range from 300° C. to 400° C. for 100/30 minutes or less.

2 . The method according to claim 1 , wherein in the third step, the member to be film-deposited to which the mixed liquid is applied is heated with a temperature range from 300° C. to 400° C. for 100/36 minutes or less.

3 . A method for manufacturing a semiconductor film, the method comprising: a first step of preparing a mixed liquid including zinc hydroxide, magnesium hydroxide, and a liquid; a second step of applying the mixed liquid to a member to be film-deposited; and a third step of heating the member to be film-deposited to which the mixed liquid is applied so that an average temperature rising rate from 300° C. to 400° C. is 30° C./min or more.

4 . The method according to claim 3 , wherein in the third step, the member to be film-deposited to which the mixed liquid is applied is heated so that the average temperature rising rate from 300° C. to 400° C. is 36° C./min or more.

5 . The method according to claim 1 , wherein a boiling temperature of the liquid is less than 300° C.

6 . The method according to claim 1 , wherein determining the amount of Zn included in raw material as X [mol] and the amount of Mg included in the raw material as Y [mol], in the first step, the mixed liquid is produced with the raw material satisfying Y/(X+Y)>0.4.

7 . The method according to claim 2 , wherein a boiling temperature of the liquid is less than 300° C.

8 . The method according to claim 2 , wherein determining the amount of Zn included in raw material as X [mol] and the amount of Mg included in the raw material as Y [mol], in the first step, the mixed liquid is produced with the raw material satisfying Y/(X+Y)>0.4.

9 . The method according to claim 3 , wherein a boiling temperature of the liquid is less than 300° C.

10 . The method according to claim 3 , wherein determining the amount of Zn included in raw material as X [mol] and the amount of Mg included in the raw material as Y [mol], in the first step, the mixed liquid is produced with the raw material satisfying Y/(X+Y)>0.4.

11 . The method according to claim 4 , wherein a boiling temperature of the liquid is less than 300° C.

12 . The method according to claim 4 , wherein determining the amount of Zn included in raw material as X [mol] and the amount of Mg included in the raw material as Y [mol], in the first step, the mixed liquid is produced with the raw material satisfying Y/(X+Y)>0.4.

13 . The method according to claim 5 , wherein determining the amount of Zn included in raw material as X [mol] and the amount of Mg included in the raw material as Y [mol], in the first step, the mixed liquid is produced with the raw material satisfying Y/(X+Y)>0.4.

14 . The method according to claim 7 , wherein determining the amount of Zn included in raw material as X [mol] and the amount of Mg included in the raw material as Y [mol], in the first step, the mixed liquid is produced with the raw material satisfying Y/(X+Y)>0.4.

15 . The method according to claim 9 , wherein determining the amount of Zn included in raw material as X [mol] and the amount of Mg included in the raw material as Y [mol], in the first step, the mixed liquid is produced with the raw material satisfying Y/(X+Y)>0.4.

16 . The method according to claim 11 , wherein determining the amount of Zn included in raw material as X [mol] and the amount of Mg included in the raw material as Y [mol], in the first step, the mixed liquid is produced with the raw material satisfying Y/(X+Y)>0.4.

Assignees

• Toyota Motor Co Ltd

Inventors

• Maekawa Ryosuke
• Awano Hiroki
• Matsunaga Tomoya
• Takeda Yuichiro
• Sakai Takenobu
• Kusano Yuya

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/3226

  Oxides · CPC title

• H10P14/2923

  being conductive materials, e.g. metallic silicides · CPC title

• H10P14/2922

  being non-crystalline insulating materials, e.g. glass or polymers · CPC title