Stress compensation for piezoelectric optical mems devices
US-2015378127-A1 · Dec 31, 2015 · US
Micro-electromechanical semiconductor component
US2015166327A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2015166327-A1 |
| Application number | US-201514631064-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 25, 2015 |
| Priority date | Jan 11, 2010 |
| Publication date | Jun 18, 2015 |
| Grant date | — |
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Abstract
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The micro-electromechanical semiconductor component is provided with a semiconductor substrate ( 4, 5 ), a reversibly deformable bending element ( 8 a ) made of semiconductor material, and at least one transistor that is sensitive to mechanical stresses, said transistor being designed as an integrated component in the bending element ( 8 a ). The transistor is arranged in an implanted active region pan ( 78 a ) that is made of a semiconductor material of a first conducting type and is introduced in the bending element ( 8 a ). Two mutually spaced, implanted drain and source regions ( 79, 80 ) made of a semiconductor material of a second conducting type are designed in the active region pan ( 78 a ), a channel region extending between said two regions. Implanted feed lines made of a semiconductor material of the second conducting type lead to the drain and source regions ( 79, 80 ). The upper face of the active region pan ( 78 a ) is covered by a gate oxide ( 81 a ). In the area of the channel region, a gate electrode ( 81 ) made of polysilicon is located on the gate oxide ( 81 a ), a feed line likewise made of polysilicon leading to said gate electrode.
First claim
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1 . A micro-electromechanical semiconductor component comprising: a semiconductor substrate; a reversibly deformable bending element made of semiconductor material; and at least one transistor being sensitive to mechanical stresses; wherein the transistor is designed as an integrated component in the bending element, wherein the transistor is arranged in an implanted active region well which is made of a semiconductor material of a first conducting type and is formed in the bending eleme…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- B81B3/0072Primary
Operations & Transport · mapped topic
Operations & Transport · mapped topic
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Frequently asked questions
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- What does patent US2015166327A1 cover?
- The micro-electromechanical semiconductor component is provided with a semiconductor substrate ( 4, 5 ), a reversibly deformable bending element ( 8 a ) made of semiconductor material, and at least one transistor that is sensitive to mechanical stresses, said transistor being designed as an integrated component in the bending element ( 8 a ). The transistor is arranged in an implanted activ…
- Who is the assignee on this patent?
- Elmos Semiconductor Ag
- What technology area does this patent fall under?
- Primary CPC classification B81B3/0072. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Thu Jun 18 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).