Method of forming deposited patterns on a surface

Patent metadata

Field	Value
Publication number	US-2015162479-A1
Application number	US-201314100048-A
Country	US
Kind code	A1
Filing date	Dec 9, 2013
Priority date	Dec 9, 2013
Publication date	Jun 11, 2015
Grant date	—

Abstract

A method for forming a coating of material on selected portions of a surface of a substrate having a plurality of cavities, each cavity having outer, peripheral sidewalls extending outwardly from the surface. The method includes: providing a structure having a release agent thereon; contacting top surface of the wafer with the release agent to transfer portions of the release agent to the top surface of the wafer while bottom portions of the cavities remain spaced from the release agent to produce an intermediate structure; the release agent disposed on the top surface of the wafer and with the bottom portions of the cavities void of the release agent; exposing the intermediate structure to the material to blanket coat the material on both the release agent and the bottom portions of the cavities; and selectively removing the release agent together with the coating material while leaving the coating material on the bottom portions of the cavities.

First claim

1 . A method for forming a coating of a material on selected portions of a substrate having a plurality of cavities formed in selected portions of a surface of the substrate, each cavity having outer, peripheral sidewalls extending outwardly from the cavity floor, comprising:
providing a structure having a release agent thereon; contacting a top surface of the substrate with the release agent to transfer portions of the release agent to the top surface of the substrate while bottom portions of the cavities remain spaced from the release agent to produce an intermediate structure with a surface comprising: the release agent disposed on the top surface of the substrate and with the bottom portions of the cavities void of the release agent; exposing the surface of the intermediate structure to the material to blanket coat the material on both the release agent disposed on the top surface of the substrate and the bottom portions of the cavities; exposing the intermediate structure having the coated release agent and the bottom portions to a process to selectively remove the release agent together with the coating material thereon from the top surface of the substrate while leaving the coating material on the bottom portions of the cavities.

2 . A method for forming an anti-reflection coating on selected portions of an optical energy transparent wafer having a plurality of cavities formed in selected portions of a surface of the wafer, each cavity having outer, peripheral sidewalls extending outwardly from the surface (cavity floor), comprising:
providing a structure having a release agent thereon; contacting top surface of the wafer with a portion of the release agent to transfer the release agent to the top surface of the wafer while bottom portions of the cavities remain spaced from the release agent to produce an intermediate structure with a surface comprising: the release agent disposed on the top surfaces of the wafer and with the bottom portions of the cavities void of the release agent; exposing the surface of the intermediate structure to an anti-reflection coating material to blanket coat the anti-reflection material on both the release agent disposed on the top surface of the wafer and the bottom portions of the cavities; exposing the intermediate structure having both the release agent disposed on the top surface of the wafer and the bottom portions of the cavities void of the release agent to a process to selectively remove the release agent together with the anti-reflection coating material thereon while leaving the anti-reflection coating material on the bottom portions of the cavities.

3 . The method recited in claim 2 including:
providing a second wafer having a plurality of arrays for detectors, each one of the arrays being associated with a corresponding one of the cavities;
aligning each one of the arrays with the corresponding one of the cavities;
bonding the optically transparent wafer to the second wafer, with each one of the cavities having the anti-reflection coating thereon displaced from the corresponding array and a second portion of the top surfaces of the wafer being bonded to the second wafer.

Assignees

• Raytheon Co

Inventors

• Gooch Roland
• Kocian Thomas Allan
• Diep Buu
• Kennedy Adam M
• Black Stephen H

Classifications

• B81C2201/0188

  Selective deposition techniques not provided for in B81C2201/0184 - B81C2201/0187 · CPC title

• B81C1/00373 Primary

  Selective deposition, e.g. printing or microcontact printing · CPC title

• H10F71/00 Primary

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title

• H10F77/707

  of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate · CPC title

• H10F77/413

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title