Complementarily strained finfet structure

Patent metadata

Field	Value
Publication number	US-2015144962-A1
Application number	US-201414322207-A
Country	US
Kind code	A1
Filing date	Jul 2, 2014
Priority date	Nov 25, 2013
Publication date	May 28, 2015
Grant date	—

Abstract

A complementary fin field-effect transistor (FinFET) includes a p-type device having a p-channel fin. The p-channel fin may include a first material that is lattice mismatched relative to a semiconductor substrate. The first material may have a compressive strain. The FinFET device also includes an n-type device having an re-channel fin. The n-channel fin may include a second material having a tensile strain that is lattice mismatched relative to the semiconductor substrate. The p-type device and the n-type device cooperate to form the complementary FinFET device.

First claim

What is claimed is:

1 . A method for fabricating a complementary fin field effect transistor (FinFET) device on a semiconductor substrate, comprising:
processing a first material having a compressive strain to fabricate a p-type fin device on the semiconductor substrate; and processing a second material having a tensile strain to fabricate an n-type fin device on the semiconductor substrate, in which the p-type fin device and the n-type fin device cooperate to form the complementary FinFET device.

2 . The method of claim 1 , in which the compressive strain is along a length of the p-type fin device.

3 . The method of claim 1 , in which the tensile strain is along a length of the n-type fin device.

4 . The method of claim 1 , in which the semiconductor substrate is a silicon substrate.

5 . The method of claim 1 , in which the first material is at least one of silicon-germanium (SiGe), germanium (Ge), and/or silicon-germanium carbon (SiGe:C).

6 . The method of claim 1 , in which the second material is silicon-carbon (Si:C).

7 . The method of claim 1 , in which the semiconductor substrate comprises an oxide layer, a nitride layer, a metal oxide layer or a silicon layer.

8 . The method of claim 1 , further comprising integrating the complementary FinFET device into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.

9 . A complementary fin field-effect transistor (FinFET) device, comprising:
a p-type device having a p-channel fin comprising a first material that is lattice mismatched relative to a semiconductor substrate, the first material having a compressive strain; and an n-type device having an n-channel fin comprising a second material having a tensile strain and being lattice mismatched relative to the semiconductor substrate, in which the p-type device and the n-type device cooperate to form the complementary FinFET device.

10 . The complementary FinFET device of claim 9 , in which the compressive strain is along a length of the p-channel fin.

11 . The complementary FinFET device of claim 9 , in which the tensile strain is along a length of the n-channel fin.

12 . The complementary FinFET device of claim 9 , in which the first material is at least one of silicon-germanium (SiGe), germanium (Ge), and/or silicon-germanium carbon (SiGe:C).

13 . The complementary FinFET device of claim 9 , in which the second material is silicon-carbon (Si:C).

14 . The complementary FinFET device of claim 9 , in which the semiconductor substrate comprises a silicon substrate.

15 . The complementary FinFET device of claim 9 , in which the semiconductor substrate comprises an oxide layer, a nitride layer, a metal oxide layer or a silicon layer.

16 . The complementary FinFET device of claim 9 integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.

17 . A method for fabricating a complementary fin field effect transistor (FinFET) device on a semiconductor substrate, comprising:
the step for fabricating a p-type device having a p-channel fin comprising a first material having a compressive strain and being lattice mismatched relative to the semiconductor substrate; and the step for fabricating an n-type device having an n-channel fin comprising a second material having a tensile strain and being lattice mismatched relative to the semiconductor substrate, in which the p-type device and the n-type device cooperate to form the complementary FinFET device.

18 . The method of claim 17 , in which the complementary FinFET device is integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.

19 . A complementary fin field-effect transistor (FinFET) device, comprising:
a p-type device having means for carrying current comprising a first material that is lattice mismatched relative to a semiconductor substrate, the first material having a compressive strain; and an n-type device having means for carrying current comprising a second material having a tensile strain and being lattice mismatched relative to the semiconductor substrate, in which the p-type device and the n-type device cooperate to form the complementary FinFET device.

20 . The complementary FinFET device of claim 19 , integrated into a mobile phone, a set top box, a music player, a video player, an entertainment unit, a navigation device, a computer, a hand-held personal communication systems (PCS) unit, a portable data unit, and/or a fixed location data unit.

Assignees

• Qualcomm Inc

Inventors

• Rim Kern
• Xu Jeffrey Junhao
• Song Stanley Seungchul

Classifications

• H10D84/0193

  the components including FinFETs · CPC title

• H10D84/038

  using silicon technology, e.g. SiGe · CPC title

• H10D62/8325

  Silicon carbide · CPC title

• H10D62/832

  being Group IV materials comprising two or more elements, e.g. SiGe · CPC title

• H10D30/751

  having composition variations in the channel regions · CPC title