Field effect silicon carbide transistor
US-9214516-B2 · Dec 15, 2015 · US
Semiconductor device and method for manufacturing same
US2015108564A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2015108564-A1 |
| Application number | US-201314400025-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 12, 2013 |
| Priority date | May 15, 2012 |
| Publication date | Apr 23, 2015 |
| Grant date | — |
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Abstract
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A source region of a MOSFET includes: a source contact region connected to a source pad; a source extension region adjacent to a channel region in a well region; and a source resistance control region arranged between the source extension region and the source contact region. The source resistance control region is different in an impurity concentration from the source extension region and the source contact region. These three regions are connected in series between the source pad and the channel region in the well region.
First claim
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1 - 19 . (canceled) 20 . A semiconductor device comprising: a semiconductor substrate; a drift layer of a first conductivity type formed on said semiconductor substrate; a well region of a second conductivity type selectively formed in a superficial area of said drift layer; a source region of said first conductivity type formed in a superficial area in said well region; a JFET region being a part of said drift layer and adjacent to said well region; a channel re…
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- H10P30/2042Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US2015108564A1 cover?
- A source region of a MOSFET includes: a source contact region connected to a source pad; a source extension region adjacent to a channel region in a well region; and a source resistance control region arranged between the source extension region and the source contact region. The source resistance control region is different in an impurity concentration from the source extension region and the …
- Who is the assignee on this patent?
- Miura Naruhisa, Hino Shiro, Furukawa Akihiko, and 5 more
- What technology area does this patent fall under?
- Primary CPC classification H10P30/2042. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Apr 23 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).