Solar cell substrate and oxide semiconductor electrode for dye- sensitized solar cell

Patent metadata

Field	Value
Publication number	US-2015090335-A1
Application number	US-201414563150-A
Country	US
Kind code	A1
Filing date	Dec 8, 2014
Priority date	Jun 17, 2008
Publication date	Apr 2, 2015
Grant date	—

Abstract

The present invention provides a solar cell substrate having a transparent conductive film formed on a glass substrate, wherein the thermal expansion coefficient of the glass substrate is from 50×10 −7 to 110×10 −7 /° C. The present invention also provides a solar cell substrate having a conductive film of fluorine-doped tin oxide or antimony-doped tin oxide formed on a glass substrate having a thickness of from 0.05 to 2 mm, wherein the strain point of the glass substrate is 525° C. or higher.

First claim

1 - 15 . (canceled)

16 . A solar cell substrate comprising a conductive film of fluorine-doped tin oxide or antimony-doped tin oxide formed on a glass substrate having a thickness of from 0.05 to 2 mm, wherein the strain point of the glass substrate is 525° C. or higher,
wherein the glass substrate comprises a composition of, in terms of % by mass,
from 50 to 70% of SiO 2 ,
from 10 to 20% of Al 2 O 3 ,
from 9 to 15% of B 2 O 3 ,
from 10 to 18% of MgO+CaO+SrO+BaO, and
from 0.05 to 1% of SnO 2 +Sb 2 O 3 +As 2 O 3 ,
wherein the glass substrate does not contain an alkali metal oxide.

17 . The solar cell substrate as claimed in claim 16 , wherein the solar cell is a dye-sensitized solar cell.

18 . An oxide semiconductor electrode for dye-sensitized solar cell comprising an oxide semiconductor layer having a thickness of from 5 to 50 μm formed on the conductive film of the solar cell substrate as claimed in claim 16 .

19 . The oxide semiconductor electrode for dye-sensitized solar cell as claimed in claim 18 , wherein the oxide semiconductor layer contains titanium oxide.

20 . The oxide semiconductor electrode for dye-sensitized solar cell as claimed in claim 18 , wherein the oxide semiconductor layer comprises oxide particles having a mean primary particle size of at most 30 nm.

21 . The oxide semiconductor electrode for dye-sensitized solar cell as claimed in claim 18 , wherein the porosity of the oxide semiconductor layer is from 60 to 80%.

22 . The oxide semiconductor electrode for dye-sensitized solar cell as claimed in claim 18 , wherein the oxide semiconductor layer comprises plural layers having different light transmittance.

23 . The oxide semiconductor electrode for dye-sensitized solar cell as claimed in claim 18 , wherein the oxide semiconductor layer comprises plural layers having different particle size distribution for the oxide particles.

Assignees

• Nippon Electric Glass Co

Inventors

• Sawada Masahiro
• Nagakane Tomohiro
• Sakamoto Akihiko
• Seto Tadashi
• Fujimoto Satoshi

Classifications

• H10F77/1696

  the films including Group II-VI materials, e.g. CdTe or CdS · CPC title

• H10F77/244

  made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers · CPC title

• H10F77/169

  Thin semiconductor films on metallic or insulating substrates · CPC title

• H01G9/2031 Primary

  comprising titanium oxide, e.g. TiO2 (H01G9/2036 takes precedence) · CPC title

• C03C3/087

  containing calcium oxide, e.g. common sheet or container glass · CPC title