Magnetic-tunnel-junction devices for a magnetic-field sensor
US-2024389467-A1 · Nov 21, 2024 · US
US2015061663A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2015061663-A1 |
| Application number | US-201414532857-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 4, 2014 |
| Priority date | Feb 21, 2011 |
| Publication date | Mar 5, 2015 |
| Grant date | — |
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A semiconductor process and apparatus provide a high-performance magnetic field sensor with three differential sensor configurations which require only two distinct pinning axes, where each differential sensor is formed from a Wheatstone bridge structure with four unshielded magnetic tunnel junction sensor arrays, each of which includes a magnetic field pulse generator for selectively applying a field pulse to stabilize or restore the easy axis magnetization of the sense layers to orient the magnetization in the correct configuration prior to measurements of small magnetic fields. The field pulse is sequentially applied to groups of the sense layers of the Wheatstone bridge structures, thereby allowing for a higher current pulse or larger sensor array size for maximal signal to noise ratio.
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What is claimed is: 1 . A magnetic field sensor comprising: a first bridge circuit including a first plurality of magnetic sense elements configured to sense a magnetic field in a first dimension, the first plurality of magnetic sense elements including i groups of magnetic sense elements where i is greater than or equal to 2, and wherein each group of the i groups of magnetic sense elements includes a plurality of magnetic sense elements to sense the magnetic field in the first…
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