Adaptive Power Supply Voltage Transient Protection
US-2024364104-A1 · Oct 31, 2024 · US
Semiconductor device
US2015048874A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2015048874-A1 |
| Application number | US-201414527863-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 30, 2014 |
| Priority date | Feb 28, 2013 |
| Publication date | Feb 19, 2015 |
| Grant date | — |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
Disclosed is a semiconductor device that includes an N-channel MOS transistor and a control voltage generation circuit. The N-channel MOS transistor controls the supply of a power supply voltage obtained by stepping down a DC voltage. The control voltage generation circuit clips the gate voltage of the N-channel MOS transistor at a control voltage not higher than a predetermined voltage in accordance with the DC voltage.
First claim
Opening claim text (preview).
What is claimed is: 1 . A semiconductor device comprising: an input power supply terminal configured to receive a first voltage; a step-down circuit configured to generate a second voltage based on the first voltage, the step-down circuit being coupled with the input power supply terminal and having an output node configured to supply the second voltage; an output power supply terminal configured to be coupled to a load circuit; an N-channel MOSFET whose drain, source and ga…
Assignees
Inventors
Classifications
Electricity · mapped topic
- H02H9/04Primary
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US2015048874A1 cover?
- Disclosed is a semiconductor device that includes an N-channel MOS transistor and a control voltage generation circuit. The N-channel MOS transistor controls the supply of a power supply voltage obtained by stepping down a DC voltage. The control voltage generation circuit clips the gate voltage of the N-channel MOS transistor at a control voltage not higher than a predetermined voltage in acco…
- Who is the assignee on this patent?
- Renesas Electronics Corp
- What technology area does this patent fall under?
- Primary CPC classification H02H9/04. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Feb 19 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).