Pressure-sensing element and pressure sensor
US-2024167901-A1 · May 23, 2024 · US
Test structure and methodology for estimating sensitivity of pressure sensors
US2015048848A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2015048848-A1 |
| Application number | US-201313967877-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 15, 2013 |
| Priority date | Aug 15, 2013 |
| Publication date | Feb 19, 2015 |
| Grant date | — |
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Abstract
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A test structure includes two capacitor structures, wherein one of the capacitor structures has conductor plates spaced apart by a cavity, and the other capacitor structure does not include a cavity. Methodology entails forming the test structure and a pressure sensor on the same substrate using the same fabrication process techniques. Methodology for estimating the sensitivity of the pressure sensor includes detecting capacitances for each of the two capacitor structures and determining a ratio of the capacitances. A critical dimension of the cavity in one of the capacitor structures is estimated using the ratio, and the sensitivity of the pressure sensor is estimated using the critical dimension.
First claim
Opening claim text (preview).
What is claimed is: 1 . A test structure comprising: a first capacitor structure having a first conductor plate, a second conductor plate, and an electrical insulator layer interposed between and in contact with each of said first and said second conductor plates, said first capacitor structure producing a first capacitance; and a second capacitor structure having a third conductor plate and a fourth conductor plate spaced apart by a cavity, said second capacitor structure pro…
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Operations & Transport · mapped topic
Physics · mapped topic
Physics · mapped topic
- G01L9/0072Primary
Physics · mapped topic
- G01R27/2605Primary
Physics · mapped topic
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- What does patent US2015048848A1 cover?
- A test structure includes two capacitor structures, wherein one of the capacitor structures has conductor plates spaced apart by a cavity, and the other capacitor structure does not include a cavity. Methodology entails forming the test structure and a pressure sensor on the same substrate using the same fabrication process techniques. Methodology for estimating the sensitivity of the pressure …
- Who is the assignee on this patent?
- Freescale Semiconductor Inc
- What technology area does this patent fall under?
- Primary CPC classification G01L9/0072. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Thu Feb 19 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).