Control of metallic contamination from metal-containing photoresist
US-2024036474-A1 · Feb 1, 2024 · US
US2015004792A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2015004792-A1 |
| Application number | US-201313927326-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 26, 2013 |
| Priority date | Jun 26, 2013 |
| Publication date | Jan 1, 2015 |
| Grant date | — |
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A method for treating a wafer is provided. The method includes at least the following steps. A plasma process is performed on a front surface of the wafer, and the wafer is cleaned. The wafer is cleaned by applying deionized water with dissolved CO 2 to the front surface of the wafer and applying a chemical solution to a back surface, opposite to the front surface, of the wafer.
Opening claim text (preview).
What is claimed is: 1 . A method for treating a wafer, comprising: performing a plasma process on a front surface of the wafer; and cleaning the wafer, comprising: applying deionized water with dissolved CO 2 to the front surface of the wafer; and applying a chemical solution to a back surface, opposite to the front surface, of the wafer. 2 . The method for treating the wafer according to claim 1 , wherein the chemical solution comprises deionize…
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