Method of Forming Semiconductor Device
US-2024379727-A1 · Nov 14, 2024 · US
Cmos image sensor
US2015001663A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2015001663-A1 |
| Application number | US-201414315730-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 26, 2014 |
| Priority date | Jul 1, 2013 |
| Publication date | Jan 1, 2015 |
| Grant date | — |
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Abstract
Official abstract text for this publication.
An image sensor includes a semiconductor substrate, a storage node region in the semiconductor substrate, an insulating portion on the semiconductor substrate, a via contact extending through the insulating portion, a photo-electric converter in the semiconductor substrate and spaced apart from the storage node region, an organic photo-electric layer on the insulating portion, and a buffer interposed between and electrically connecting the via contact and the storage node region.
First claim
Opening claim text (preview).
What is claimed is: 1 . An image sensor, comprising: a semiconductor substrate; a storage node region in the semiconductor substrate; a photo-electric converter in the semiconductor substrate and spaced apart from the storage node region; an insulating portion disposed on the semiconductor substrate; a via contact adjacent to the storage node region and extending through the insulating portion; an organic photo-electric layer disposed on the insulating portion; and a…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10F39/8053Primary
Electricity · mapped topic
- H10F39/12Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US2015001663A1 cover?
- An image sensor includes a semiconductor substrate, a storage node region in the semiconductor substrate, an insulating portion on the semiconductor substrate, a via contact extending through the insulating portion, a photo-electric converter in the semiconductor substrate and spaced apart from the storage node region, an organic photo-electric layer on the insulating portion, and a buffer inte…
- Who is the assignee on this patent?
- Samsung Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10F39/8053. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Jan 01 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).