Electrode Foil and Electronic Device

Patent metadata

Field	Value
Publication number	US-2015001519-A1
Application number	US-201214376498-A
Country	US
Kind code	A1
Filing date	Jul 27, 2012
Priority date	Feb 7, 2012
Publication date	Jan 1, 2015
Grant date	—

Abstract

An electrode foil functioning as both a supporting substrate and an electrode and suitable for low-cost high-efficiency production of flexible electronic devices having functionality on their both sides is provided. An electrode foil of the present invention comprises a metal foil, wherein the metal foil has a thickness of 1 to 250 μm, and wherein the outermost surfaces on both sides of the electrode foil are ultra-smooth surfaces each having an arithmetic mean roughness Ra of 30.0 nm or less as determined in accordance with JIS B 0601-2001.

First claim

1 . An electrode foil comprising a metal foil, wherein the metal foil has a thickness of 1 to 250 μm, and wherein the outermost surfaces on both sides of the electrode foil are ultra-smooth surfaces each having an arithmetic mean roughness Ra of 30.0 nm or less as determined in accordance with JIS B 0601-2001.

2 . The electrode foil according to claim 1 , wherein the arithmetic mean roughness Ra is 10.0 nm or less.

3 . The electrode foil according to claim 1 , wherein the electrode foil is used as an electrode functioning as a supporting substrate for a flexible electronic device.

4 . The electrode foil according to claim 1 , wherein the electrode foil is used as an electrode functioning as a supporting substrate for an electronic device having functionality on both sides.

5 . The electrode foil according to claim 1 , wherein the electrode foil is used as an electrode for at least one selected from the group consisting of a light-emitting element, a photoelectric element, and a thermoelectric element.

6 . The electrode foil according to claim 1 , wherein the metal foil has a thickness of 10 μm to 150 μm.

7 . The electrode foil according to claim 1 , wherein the metal foil has a thickness of 1 μm to 50 μm.

8 . The electrode foil according to claim 1 , wherein the metal foil is a nonmagnetic metal foil.

9 . The electrode foil according to claim 1 , wherein the metal foil is a copper foil.

10 . The electrode foil according to claim 1 , further comprising one or two reflective layers provided directly on one or two surfaces of the metal foil, wherein the outer surfaces of the reflective layers constitute the respective ultra-smooth surfaces.

11 . The electrode foil according to claim 1 , further comprising one or two transparent or translucent buffer layers provided directly on one or two surfaces of the metal foil, wherein the outer surfaces of the buffer layers constitute the respective ultra-smooth surfaces.

12 . The electrode foil according to claim 1 , further comprising one or two reflective layers provided directly on one or two surfaces of the metal foil and one or two transparent or translucent buffer layers provided directly on one or two surfaces of the reflective layers, wherein the outer surfaces of the buffer layers constitute the respective ultra-smooth surfaces.

13 . The electrode foil according to claim 1 , wherein the electrode foil has a thickness of 1 μm to 300 μm.

14 . A copper foil having a thickness of 1 μm to 150 μm, wherein the surfaces on both sides of the copper foil each have an arithmetic mean roughness Ra of 10.0 nm or less as determined in accordance with JIS B 0601-2001.

15 . An electronic device comprising:
the electrode foil according to claim 1 ; and at least one semiconductor functional layer having semiconductor characteristics provided directly on at least one outermost surface of the electrode foil.

16 . The electronic device according to claim 15 , wherein the semiconductor functional layers are provided directly on the outermost surfaces on both sides of the electrode foil and have the same or different functions from each other.

17 . The electronic device according to claim 15 , wherein the semiconductor functional layer comprises an organic semiconductor;
an inorganic semiconductor; or mixtures or combinations thereof.

18 . The electronic device according to claim 15 , wherein the semiconductor functional layer has at least one function selected from the group consisting of photoexcited power generation, thermally excited power generation, and excited luminescence.

19 . The electronic device according to claim 15 , comprising a transparent or translucent counter electrode on the semiconductor functional layer.

Assignees

• Matsuura Yoshinori
• Kitajima Nozomu
• Nakamura Toshimi
• MYOI Masaharu
• Mitsui Mining & Smelting Co

Inventors

• Matsuura Yoshinori
• Kitajima Nozomu
• Nakamura Toshimi
• MYOI Masaharu

Classifications

• H10K59/80524

  Transparent cathodes, e.g. comprising thin metal layers · CPC title

• H10K59/80518

  Reflective anodes, e.g. ITO combined with thick metallic layers · CPC title

• H10H20/831

  characterised by their shape · CPC title

• H01M4/64 Primary

  Carriers or collectors · CPC title

• H10H20/835

  Reflective materials · CPC title