Display device

Patent metadata

Field	Value
Publication number	US-12597288-B2
Application number	US-202519014240-A
Country	US
Kind code	B2
Filing date	Jan 9, 2025
Priority date	Apr 2, 2024
Publication date	Apr 7, 2026
Grant date	Apr 7, 2026

Abstract

Provided is a display device including an illuminance sensor. The illuminance sensor includes a read-out line disposed on a substrate and extending in a first direction, a light receiving element disposed on the read-out line, a first sensor transistor configured to control a sensing current based on a voltage of a sensor node, which is a first electrode of the light receiving element, a second sensor transistor configured to supply a reset voltage to the sensor node based on a reset signal, a third sensor transistor configured to electrically connect a first electrode of the first sensor transistor to the read-out line based on a gate signal, and a sensor capacitor comprising a first capacitor electrode electrically connected to the first electrode of the first sensor transistor, and a second capacitor electrode overlapping the first capacitor electrode and electrically connected to the first electrode of the light receiving element.

First claim

What is claimed is:

1 . An illuminance sensor comprising:
a read-out line disposed on a substrate and extending in a first direction; a light receiving element disposed on the read-out line; a first sensor transistor configured to control a sensing current based on a voltage of a sensor node, which is a first electrode of the light receiving element; a second sensor transistor configured to supply a reset voltage to the sensor node in response to a reset signal; a third sensor transistor configured to electrically connect a first electrode of the first sensor transistor to the read-out line in response to a gate signal; and a sensor capacitor comprising a first capacitor electrode electrically connected to the first electrode of the first sensor transistor and a second capacitor electrode overlapping the first capacitor electrode and electrically connected to the first electrode of the light receiving element.

2 . The illuminance sensor of claim 1 , wherein the first capacitor electrode is formed integrally with the first electrode of the first sensor transistor.

3 . The illuminance sensor of claim 1 , wherein the third sensor transistor comprises a third-first sensor transistor and a third-second sensor transistor connected in series between the read-out line and the first electrode of the first sensor transistor.

4 . The illuminance sensor of claim 3 , wherein the first capacitor electrode is formed integrally with a drain electrode of the third-second sensor transistor.

5 . The illuminance sensor of claim 3 , further comprising:
a first read-out electrode disposed in the same layer as the second capacitor electrode and connected to a first electrode of the third-first sensor transistor; and a second read-out electrode disposed on the first read-out electrode and electrically connecting the first read-out electrode to the read-out line.

6 . The illuminance sensor of claim 1 , further comprising a first sensor node electrode formed integrally with the second capacitor electrode and electrically connected to a gate electrode of the first sensor transistor.

7 . The illuminance sensor of claim 6 , further comprising:
a second sensor node electrode disposed on the first sensor node electrode and connected to the first sensor node electrode; and a third sensor node electrode disposed on the second sensor node electrode and electrically connecting the second sensor node electrode to the first electrode of the light receiving element.

8 . The illuminance sensor of claim 1 , wherein a semiconductor region of each of the first sensor transistor and the third sensor transistor includes a silicon-based material, and a semiconductor region of the second sensor transistor includes an oxide-based material.

9 . The illuminance sensor of claim 1 , further comprising:
a first active layer disposed on the substrate and comprising a semiconductor region of each of the first sensor transistor and the third sensor transistor; a first gate layer disposed on the first active layer; a second gate layer disposed on the first gate layer; a second active layer disposed on the second gate layer and comprising a semiconductor region of the second sensor transistor; a third gate layer disposed on the second active layer; a first source metal layer disposed on the third gate layer; a second source metal layer disposed on the first source metal layer; and a third source metal layer disposed on the second source metal layer and comprising the read-out line.

10 . The illuminance sensor of claim 9 , wherein the first capacitor electrode is disposed in the first active layer, and the second capacitor electrode is disposed in the first source metal layer.

11 . A display device comprising:
a first display area comprising a pixel comprising a light emitting element and a fingerprint sensor which receives light incident on a fingerprint sensor area to recognize a pattern of a user's fingerprint; and a second display area disposed adjacent to the first display area and comprising an illuminance sensor which receives light incident on an illuminance sensor area to measure surrounding brightness, wherein each of the fingerprint sensor and the illuminance sensor comprises: a read-out line disposed on a substrate and extending in a first direction; a light receiving element disposed on the read-out line; a first sensor transistor configured to control a sensing current based on a voltage of a sensor node which is connected to the light receiving element; a second sensor transistor configured to supply a reset voltage to the sensor node in response to a reset signal; and a third sensor transistor configured to electrically connect a first electrode of the first sensor transistor to the read-out line in response to a gate signal, and wherein the illuminance sensor further comprises a sensor capacitor comprising a first capacitor electrode electrically connected to the first electrode of the first sensor transistor and a second capacitor electrode overlapping the first capacitor electrode and electrically connected to the first electrode of the light receiving element.

12 . The display device of claim 11 , wherein the light emitting element of the pixel, the light receiving element of the fingerprint sensor, and the light receiving element of the illuminance sensor are disposed in the same layer.

13 . The display device of claim 11 , wherein a size of the illuminance sensor area is smaller than a size of the fingerprint sensor area.

14 . The display device of claim 11 , wherein a light receiving layer of the illuminance sensor receives light having a wavelength band wider than that of a light receiving layer of the fingerprint sensor.

15 . The display device of claim 11 , wherein the first capacitor electrode is formed integrally with the first electrode of the first sensor transistor of the illuminance sensor.

16 . The display device of claim 11 , wherein the third sensor transistor comprises a third-first sensor transistor and a third-second sensor transistor connected in series between the read-out line and the first electrode of the first sensor transistor, and
wherein the first capacitor electrode is formed integrally with a drain electrode of the third-second sensor transistor of the illuminance sensor.

17 . The display device of claim 16 , wherein the illuminance sensor further comprises:
a first read-out electrode disposed in the same layer as the second capacitor electrode and connected to a first electrode of the third-first sensor transistor; and a second read-out electrode disposed on the first read-out electrode and electrically connecting the first read-out electrode to the read-out line.

18 . The display device of claim 11 , wherein the illuminance sensor further comprises a first sensor node electrode formed integrally with the second capacitor electrode and electrically connected to a gate electrode of the first sensor transistor.

19 . The display device of claim 18 , wherein the illuminance sensor further comprises:
a second sensor node electrode disposed on the first sensor node electrode and connected to the first sensor node electrode; and a third sensor node electrode disposed on the second sensor node electrode and electrically connecting the second sensor node electrode to the first electrode of the light receiving element.

20 . The display device of claim 11 , wherein a semiconductor region of each of the first sensor transistor and the third sensor transi

Assignees

• Samsung Display Co Ltd

Inventors

• Shin Dong Hee
• No Sang Yong
• Son Sun Kwun

Classifications

• H10K59/65

  OLEDs integrated with inorganic image sensors · CPC title

• G09G2360/144

  the light being ambient light · CPC title

• G01J2001/4473

  Phototransistor · CPC title

• G01J2001/446

  Photodiode · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title