Monolithic semiconductor-based optically addressable light valve comprising a liquid crystal layer

Patent metadata

Field	Value
Publication number	US-12596281-B2
Application number	US-202318499677-A
Country	US
Kind code	B2
Filing date	Nov 1, 2023
Priority date	Nov 4, 2022
Publication date	Apr 7, 2026
Grant date	Apr 7, 2026

Abstract

A monolithic transmissive or reflective light valve system able to withstand operation with high optical fluence and high average power lasers is described. The light valve includes a liquid crystal layer on an alignment layer, a first epitaxial doped semiconductor transparent electrode on a photoconductor layer made of a first wide bandgap or ultrawide bandgap semi- insulating semiconductor layer (or wafer). A second epitaxial semiconductor transparent electrode layer brackets the light valve and includes a second wide bandgap or ultrawide bandgap semi-insulating, or conductive semiconductor layer (or wafer). In some embodiments, the doped epitaxial or ion implanted transparent electrode and photoconductor layers have matched coefficient of thermal expansion (CTE) and further matched CTE to the second wide bandgap material bracketing the light valve. In some embodiments, the transparent electrode and photoconductor layers have matched index of refraction, along with matched photoexcitation levels.

First claim

The invention claimed is:

1 . A transmissive light valve system, comprising
a liquid crystal layer; a first light patterning stack comprising a first semiconductor transparent electrode layer on a first wide bandgap semiconductor layer having a bandgap greater than 3 ev; and a second light patterning stack comprising a second semiconductor transparent electrode layer on a second wide bandgap semiconductor layer having a bandgap greater than 3 ev, wherein the first and second light patterning stacks bracket the liquid crystal layer, wherein the light valve operates at an energy density greater than 2 Joules/cm 2 .

2 . The light valve system of claim 1 , wherein the first and second wide bandgap semiconductor layers have a bandgap greater than 4 eV.

3 . The light valve system of claim 1 , wherein the first and second wide bandgap semiconductor layers comprise at least one of a GaN semi-insulating layer, an iron doped compensated FeGaN semi-insulating layer, and a Carbon or Manganese doped compensated semi-insulating GaN, and a V-SiC semi-insulating layer acting as photoconductors in the light valve system.

4 . The light valve system of claim 1 , wherein the first and second semiconductor transparent electrode layers comprise at least one of n-epi GaN, n-epi SiC, ion implanted GaN, ion implanted SiC, and aluminum zinc oxide (AZO).

5 . The light valve system of claim 1 , further comprising:
a first alignment layer positioned between the first semiconductor transparent electrode layer and the liquid crystal; and a second alignment layer positioned between the second semiconductor transparent electrode layer and the liquid crystal.

6 . The light valve system of claim 5 , wherein at least one of the first and second alignment layers comprises a grown inorganic layer.

7 . The light valve system of claim 5 , wherein a monolithic stack comprises the liquid crystal layer, the first and second semiconductor transparent electrode layers, the first and second wide bandgap semiconductor layers, and the first and second alignment layers.

8 . The light valve system of claim 7 , wherein the monolithic stack further comprises at least one antireflective (AR) coating positioned to contact at least one of the first and second semiconductor transparent electrode layers, the first and second wide bandgap semiconductor layers, and the first and second alignment layers.

9 . A monolithic transmissive light valve system, comprising
a liquid crystal layer; a first semiconductor transparent electrode layer on a first semi-insulating photoconductor layer comprising a first wide bandgap semiconductor layer; a second semiconductor transparent electrode layer on a second semi-insulating photoconductor layer comprising a second wide bandgap semiconductor layer; and a plurality of alignment layers and antireflective layers monolithically formed on at least one of the first and semiconductor transparent electrode layers, and the first and second semi-insulating photoconductor layers, wherein the light valve system operates with an energy density greater than 2 Joules/cm 2 .

10 . A process for manufacturing a transmissive light valve system, comprising the steps of
providing a liquid crystal layer; positioning a first light patterning stack comprising a first semiconductor transparent electrode layer and a first photoconductor layer having a first semi-insulating semiconductor layer having bandgap greater than 3 ev in contact with the liquid crystal layer; and positioning a second light patterning stack comprising a second semiconductor transparent electrode layer and a second photoconductor layer having a second semi-insulating semiconductor layer having a bandgap greater than 3 ev in contact with the liquid crystal layer, wherein the light valve system operates with an energy density greater than 2 Joules/cm 2 .

Assignees

• Seurat Tech Inc

Inventors

• Elhadj Selim

Classifications

• G02F1/1357

  Electrode structure · CPC title

• G02F1/1352

  Light-reflecting layers · CPC title

• G02F2203/48

  Variable attenuator · CPC title

• G02F2202/12

  photoconductor · CPC title

• G02F2203/12

  spatial light modulator · CPC title