Aligned metallization for solar cells
US-2021175374-A1 · Jun 10, 2021 · US
US12593528B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12593528-B2 |
| Application number | US-202418632192-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 10, 2024 |
| Priority date | Dec 28, 2023 |
| Publication date | Mar 31, 2026 |
| Grant date | Mar 31, 2026 |
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A solar cell includes: a substrate having a front surface and a opposite rear surface; a first dielectric layer formed over the rear surface; a first doped conductive layer formed over a surface of the first dielectric layer away from the substrate; grooves arranged alternatingly in a first direction, penetrating the first doped conductive layer and the first dielectric layer, and extending into inside of the substrate; a second dielectric layer formed over a bottom surface of the grooves; a second doped conductive layer formed over a surface of the second dielectric layer away from the substrate; and a doped layer aligned with the second doped conductive layer and located between the second dielectric layer and the substrate. The first doped conductive layer and the doped layer are doped with a first dopant element, and the substrate and the second doped conductive layer are doped with a second dopant element.
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What is claimed is: 1 . A solar cell, comprising: a substrate having a front surface and a rear surface opposite to the front surface; a first dielectric layer formed over the rear surface of the substrate; a first doped conductive layer formed over a surface of the first dielectric layer away from the substrate, and doped with a first dopant element, wherein the substrate is doped with a second dopant element, one of the first dopant element and the second dopant element being a P-type dopant element and another of the first dopant element and the second dopant element being an N-type dopant element; a plurality of grooves arranged at intervals in a first direction, penetrating the first doped conductive layer and the first dielectric layer, and extending into the substrate; a second dielectric layer formed over bottom surfaces of the plurality of grooves; a second doped conductive layer formed over a surface of the second dielectric layer away from the substrate, and doped with the second dopant element; and a doped layer aligned with the second doped conductive layer, located between the second dielectric layer and the substrate, and doped with the first dopant element. 2 . The solar cell according to claim 1 , wherein a ratio of a doping concentration of the first dopant element in the doped layer to a doping concentration of the first dopant element in the first doped conductive layer ranges from 1×10 −4 to 1×10 −3 . 3 . The solar cell according to claim 2 , wherein the doping concentration of the first dopant element in the doped layer ranges from 1×10 14 /cm 3 to 9×10 18 /cm 3 . 4 . The solar cell according to claim 1 , wherein in a direction perpendicular to the front surface of the substrate, a ratio of a thickness of the doped layer to a thickness of the substrate ranges from 5×10 −4 to 2×10 −3 . 5 . The solar cell according to claim 4 , wherein in the direction perpendicular to the front surface of the substrate, the thickness of the doped layer ranges from 100 nm to 300 nm. 6 . The solar cell according to claim 1 , wherein in a direction perpendicular to the front surface of the substrate, an interval between a surface of the second doped conductive layer away from the substrate and a surface of the first doped conductive layer facing towards the substrate is less than or equal to 1 μm. 7 . The solar cell according to claim 6 , wherein in the direction perpendicular to the front surface of the substrate, the interval between the surface of the second doped conductive layer away from the substrate and the surface of the first doped conductive layer facing towards the substrate ranges from 50 nm to 300 nm. 8 . The solar cell according to claim 1 , further comprising a passivation layer and a plurality of electrodes, the passivation layer being formed over a surface of the first doped conductive layer away from the substrate and a surface of the second doped conductive layer away from the substrate, the plurality of electrodes including first electrodes and second electrodes arranged alternatingly, the first electrodes penetrating the passivation layer and being in electrical contact with the first doped conductive layer, and the second electrodes penetrating the passivation layer and being in electrical contact with the second doped conductive layer. 9 . The solar cell according to claim 1 , further comprising an antireflection layer formed over the front surface of the substrate. 10 . The solar cell according to claim 9 , wherein the antireflection layer has a textured surface away from the substrate. 11 . The solar cell according to claim 9 , wherein the antireflection layer has a textured surface in contact with the substrate. 12 . The solar cell according to claim 1 , wherein in the first direction, a ratio of a length of any portion of the second doped conductive layer to a length of any portion of the first doped conductive layer ranges from 0.2 to 1. 13 . The solar cell according to claim 12 , wherein in the first direction, the second doped conductive layer has a thickness in a range of 200 μm to 400 μm. 14 . The solar cell according to claim 1 , wherein the first doped conductive layer is not in contact with the second doped conductive layer. 15 . The solar cell according to claim 1 , wherein the doped layer and the second dielectric layer have a same length and width as the second doped conductive layer. 16 . The solar cell according to claim 1 , wherein the first dielectric layer has a same length and width as the first doped conductive layer. 17 . The solar cell according to claim 1 , wherein one of the first dopant element and the second dopant element is a P-type dopant element and another of the first dopant element and the second dopant element is an N-type dopant element. 18 . The solar cell according to claim 1 , wherein a doping concentration of the second dopant element in the second doped conductive layer is higher than a doping concentration of the second dopant element in the substrate. 19 . The solar cell according to claim 1 , wherein the doping concentration of the first dopant element in the first doped conductive layer ranges from 1×10 20 /cm 3 to 6×10 20 /cm 3 . 20 . A photovoltaic module, comprising: at least one cell string formed by connecting a plurality of solar cells according to claim 1 ; at least one encapsulation layer configured to cover surfaces of the at least one cell string; and at least one cover plate configured to cover surfaces of the at least one encapsulation layer away from the at least one cell string.
Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells · CPC title
the coatings being antireflective or having enhancing optical properties · CPC title
of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate · CPC title
Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side · CPC title
for back-contact photovoltaic cells · CPC title
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