Optoelectronic device comprising three-dimensional semiconductor elements and method for manufacturing said device

Patent metadata

Field	Value
Publication number	US-12588316-B2
Application number	US-202017621676-A
Country	US
Kind code	B2
Filing date	Jun 22, 2020
Priority date	Jun 25, 2019
Publication date	Mar 24, 2026
Grant date	Mar 24, 2026

Abstract

A method for manufacturing an optoelectronic device including forming, by metal-organic chemical vapor deposition, MOCVD, wire-shaped, conical, or frustoconical semiconductor elements made of a III-V compound, doped or undoped, each semiconductor element extending along an axis and including a top, and forming by remote plasma chemical vapor deposition, RPCVD, or by molecular-beam epitaxy, MBE, or by hydride vapor phase epitaxy, HVPE, for each semiconductor element, an active area only on said top including at least a first semiconductor layer made of the III-V compound and a second semiconductor layer made of the III-V compound and an additional group-III element.

First claim

The invention claimed is:

1 . A method for manufacturing an optoelectronic device comprising:
forming in a first reactor, by metal-organic chemical vapor deposition, MOCVD, wire-shaped, conical, or frustoconical semiconductor elements made of a III-V compound, doped or undoped, each semiconductor element extending along an axis and comprising a top; and forming in a second reactor, different from the first reactor, by molecular-beam epitaxy, MBE, at a pressure in the range from 4*10 −3 mPa to 1 mPa, for each semiconductor element, an active area only on said top comprising at least a first semiconductor layer made of the III-V compound and a second semiconductor layer made of the III-V compound and an additional group-III element.

2 . The method of claim 1 , wherein each active area comprises at least one quantum well formed on a quantum barrier, and wherein the growth conditions of the quantum barrier are selected to promote the formation of an upper surface of the quantum barrier having a c-plane with a desired mean diameter.

3 . The method of claim 1 , comprising forming, among said wire-shaped, conical, or frustoconical semiconductor elements, first wire-shaped, conical, or frustoconical semiconductor elements having a first mean diameter and second wire-shaped, conical, or frustoconical semiconductor elements having a second mean diameter superior to the first mean diameter, the active areas on top of the first semiconductor elements emitting a first radiation at a first wavelength and the active areas on top of the second semiconductor elements emitting a second radiation at a second wavelength different from the first wavelength.

4 . The method of claim 1 , wherein the MOCVD step is performed at a temperature in the range from 900° C. to 1065° C. and the step for forming the active areas is performed at a temperature in the range from 570° C. to 800° C.

5 . The method of claim 1 , wherein a precursor gas of the group-V element and a precursor gas of the group-III element are injected into the first reactor during the MOCVD step and wherein the ratio of the flow of precursor gas of the group-V element to the flow of precursor gas of the group-III element, called V/III ratio, being in the range from 5 to 1000.

6 . The method of claim 1 , wherein the MOCVD step is performed at a pressure in the range from 6.7 kPa to 26.7 kPa.

7 . The method of claim 1 , comprising, before the formation of the active areas, the formation by MBE, for each semiconductor element, of a first semiconductor layer on said top made of the III-V compound.

8 . The method of claim 7 , wherein the MBE step for forming the first semiconductor layers is performed at a temperature in the range from 800° C. to 900° C.

9 . The method of claim 1 , comprising, after the formation of the active areas, the formation by MBE, for each semiconductor element, of a second semiconductor layer on said active area made of the III-V compound.

10 . The method of claim 9 , comprising, after the formation of the active areas and before the formation of the second semiconductor layers, the formation by MBE, for each semiconductor element, of an electron blocking layer of said active area.

11 . The method of claim 1 , wherein the active areas are the areas having most the radiation supplied by the optoelectronic device emitted therefrom or having most the radiation received by the optoelectronic device captured therein.

12 . The method of claim 1 , wherein the III-V compound is a III-N compound, particularly selected from the group comprising gallium nitride, aluminum nitride, indium nitride, gallium indium nitride, gallium aluminum nitride, aluminum indium nitride, and gallium aluminum indium nitride.

13 . The method of claim 1 , wherein the semiconductor elements comprise at least first and second semiconductor elements, wherein the active areas comprise first active areas resting on the tops of the first semiconductor elements and configured to emit or to receive a first electromagnetic radiation at a first wavelength and second active areas resting on the tops of the second semiconductor elements and configured to emit or to receive a second electromagnetic radiation at a second wavelength different from the first wavelength.

14 . The method of claim 1 , wherein the diameter of each first semiconductor element is smaller than the diameter of each second semiconductor element, wherein the first and second active areas comprise a single quantum well or multiple quantum wells and wherein the first wavelength is greater than the second wavelength.

15 . A method for manufacturing an optoelectronic device comprising:
forming in a first reactor, by metal-organic chemical vapor deposition, MOCVD, wire-shaped, conical, or frustoconical semiconductor elements made of a III-V compound, doped or undoped, each semiconductor element extending along an axis and comprising a top; and forming in a second reactor, different from the first reactor, by remote plasma chemical vapor deposition, RPCVD, at a pressure in the range from 400 Pa to 1333 Pa, for each semiconductor element, an active area only on said top comprising at least a first semiconductor layer made of the III-V compound and a second semiconductor layer made of the III-V compound and an additional group-III element, wherein the MOCVD step is performed at a temperature in the range from 900° C. to 1065° C. and the step for forming the active areas is performed at a temperature in the range from 570° C. to 800° C.

16 . The method of claim 15 , wherein each active area comprises at least one quantum well formed on a quantum barrier, and wherein the growth conditions of the quantum barrier are selected to promote the formation of an upper surface of the quantum barrier having a c-plane with a desired mean diameter.

17 . The method of claim 15 , comprising forming, among said wire-shaped, conical, or frustoconical semiconductor elements, first wire-shaped, conical, or frustoconical semiconductor elements having a first mean diameter and second wire-shaped, conical, or frustoconical semiconductor elements having a second mean diameter superior to the first mean diameter, the active areas on top of the first semiconductor elements emitting a first radiation at a first wavelength and the active areas on top of the second semiconductor elements emitting a second radiation at a second wavelength different from the first wavelength.

18 . The method of claim 15 , wherein a precursor gas of the group-V element and a precursor gas of the group-III element are injected into the first reactor during the MOCVD step and wherein the ratio of the flow of precursor gas of the group-V element to the flow of precursor gas of the group-III element, called V/III ratio, being in the range from 5 to 1000.

19 . The method of claim 15 , wherein the MOCVD step is performed at a pressure in the range from 6.7 kPa to 26.7 kPa.

20 . The method of claim 15 , wherein the active areas are the areas having most the radiation supplied by the optoelectronic device emitted therefrom or having most the radiation received by the optoelectronic device captured therein.

21 . The method of claim 15 , wherein the III-V compound is a III-N compound, particularly selected from the group comprising gallium nitride, aluminum nitride, indium nitride, gallium indium nitride, gallium aluminum nitride, aluminum indium nitride, and gallium aluminum indium nitride.

22 . The method of claim 15 , wherei

Assignees

• Aledia

Inventors

• Kryliouk Olga
• Napierala Jérôme

Classifications

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/821

  of the light-emitting regions, e.g. non-planar junctions · CPC title

• H10H20/013 Primary

  having light-emitting regions comprising only Group III-V materials · CPC title

• H10H20/818 Primary

  within the light-emitting regions · CPC title

• Y02E10/544

  Solar cells from Group III-V materials · CPC title