Image sensor including a buried gate

Patent metadata

Field	Value
Publication number	US-12588304-B2
Application number	US-202218053744-A
Country	US
Kind code	B2
Filing date	Nov 8, 2022
Priority date	Nov 9, 2021
Publication date	Mar 24, 2026
Grant date	Mar 24, 2026

Abstract

An image sensor includes a semiconductor substrate including a first surface and a second surface and having a photoelectric conversion region disposed therein. A floating diffusion region is disposed within the semiconductor substrate. The floating diffusion region is adjacent to the first surface. A buried gate structure is disposed within a buried gate trench extending from the first surface of the semiconductor substrate towards an interior of the semiconductor substrate, the buried gate structure including a first buried gate electrode inside a first buried gate trench adjacent to a first side part of the floating diffusion region, and a second buried gate electrode inside a second buried gate trench spaced apart from the first buried gate trench and adjacent to a second side part of the floating diffusion region, the second side part being opposite to the first side part.

First claim

What is claimed is:

1 . An image sensor, comprising:
a semiconductor substrate including a first surface and a second surface, the semiconductor substrate having a photoelectric conversion region disposed therein; a floating diffusion region disposed within the semiconductor substrate, the floating diffusion region being adjacent to the first surface; a buried gate structure disposed within a buried gate trench that is recessed with respect to the first surface, the buried gate trench extending from the first surface of the semiconductor substrate towards an interior of the semiconductor substrate, the buried gate structure comprising:
a first buried gate electrode disposed within a first buried gate trench, recessed with respect to the first surface, the first buried gate electrode being adjacent to a first side part of the floating diffusion region, the first buried gate electrode having a semi-annular horizontal cross-section, and
a second buried gate electrode disposed within a second buried gate trench, recessed with respect to the first surface, the second buried gate electrode being spaced apart from the first buried gate trench and adjacent to a second side part of the floating diffusion region that is opposite to the first side part, the second buried gate electrode having a semi-annular horizontal cross-section;
a first conductive via extending from the first buried gate electrode to connect to a first pattern of one wiring layer; a second conductive via extending from the second buried gate electrode to connect to a second pattern of the one wiring layer; and a third conductive via extending from the floating diffusion region to connect to a third pattern of the one wiring layer.

2 . The image sensor of claim 1 , wherein the first buried gate electrode and the second buried gate electrode collectively surround a periphery of the floating diffusion region in a plan view.

3 . The image sensor of claim 1 , wherein the image sensor further comprises a plurality of pixels disposed within the semiconductor substrate, wherein the photoelectric conversion region is disposed within each of the plurality of pixels, and wherein the photoelectric conversion region extends continuously to at least partially overlap both the first buried gate electrode and the second buried gate electrode.

4 . The image sensor of claim 1 , wherein the first buried gate electrode comprises:
a first side wall facing the first side part of the floating diffusion region; and a second side wall opposite to the first side wall, wherein the second buried gate electrode comprises: a third side wall facing the second side part of the floating diffusion region; and a fourth side wall opposite to the third side wall, wherein the first side wall and the third side wall are mirror symmetrical with respect to each other with the floating diffusion region disposed therebetween, and wherein the second side wall and the fourth side wall are mirror symmetrical with respect to each other with the floating diffusion region disposed therebetween.

5 . The image sensor of claim 4 , wherein the floating diffusion region has a circular horizontal cross-section, the first buried gate electrode surrounds at least a part of the floating diffusion region, and the second buried gate electrode surrounds at least another part of the floating diffusion region.

6 . The image sensor of claim 1 , wherein the first buried gate electrode and the second buried gate electrode are mirror symmetrical with respect to each other.

7 . The image sensor of claim 1 , wherein the image sensor comprises a plurality of pixels disposed within the semiconductor substrate, the photoelectric conversion region in each of the plurality of pixels comprises a first photoelectric conversion region and a second photoelectric conversion region spaced apart from the first photoelectric conversion region, the first photoelectric conversion region at least partially overlaps the first buried gate electrode, and the second photoelectric conversion region at least partially overlaps the second buried gate electrode.

8 . The image sensor of claim 1 , wherein the first buried gate electrode and the second buried gate electrode have upper surfaces at a higher level than a level of the first surface of the semiconductor substrate, and the first buried gate electrode and the second buried gate electrode extend from the first surface towards an interior of the semiconductor substrate,
wherein the second surface of the semiconductor substrate is defined as being higher than the first surface of the semiconductor substrate.

9 . The image sensor of claim 1 , wherein the first buried gate electrode and the second buried gate electrode have bottom surfaces at a higher level than a level of the first surface of the semiconductor substrate, and the image sensor further comprises a buried insulating layer disposed on the bottom surface of the first buried gate electrode and in a bottom portion of the first buried gate trench and disposed on the bottom surface of the second buried gate electrode and in a bottom portion of the second buried gate trench,
wherein the second surface of the semiconductor substrate is defined as being higher than the first surface of the semiconductor substrate.

10 . An image sensor, comprising:
a stack structure including a first substrate and a second substrate that is stacked upon the first substrate, an active pixel region in which a plurality of pixels is defined, and a pad region disposed on at least one side of the active pixel region, wherein the first substrate comprises:
a first semiconductor substrate including a first surface and a second surface, the first semiconductor substrate having a photoelectric conversion region disposed therein;
a first buried gate electrode having at least a part extending from the first surface of the first semiconductor substrate towards an interior of the first semiconductor substrate, the first buried gate electrode having a semi-annular horizontal cross-section;
a second buried gate electrode having at least a part extending from the first surface of the first semiconductor substrate towards an interior of the first semiconductor substrate, the second buried gate electrode being spaced apart from the first buried gate electrode, the second buried gate electrode having a semi-annular horizontal cross-section;
a floating diffusion region disposed within the first semiconductor substrate and at least partially surrounded by the first buried gate electrode and the second buried gate electrode;
a first conductive via extending from the first buried gate electrode to connect to a first pattern of one wiring layer;
a second conductive via extending from the second buried gate electrode to connect to a second pattern of the one wiring layer; and
a third conductive via extending from the floating diffusion region to connect to a third pattern of the one wiring layer.

11 . The image sensor of claim 10 , wherein the photoelectric conversion region extends continuously to at least partially overlap both the first buried gate electrode and the second buried gate electrode.

12 . The image sensor of claim 10 , wherein the first buried gate electrode comprises:
a first side wall facing a first side part of the floating diffusion region; and a second side wall opposite to the first side wall, wherein the second buried gate electrode comprises: a third side wall facing a second side part of the floating diffusion region; and a fourth side wall opposite to the third side wall, wherein the first side wall and the third side wall are mirror symmetrical with respect

Assignees

• Samsung Electronics Co Ltd

Inventors

• Choi Hyuksoon
• Ahn Daekun

Classifications

• H10F39/8037

  the integrated elements comprising a transistor · CPC title

• H10F39/8023

  Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery · CPC title

• H10F39/807

  Pixel isolation structures · CPC title

• H10F39/811

  Interconnections · CPC title

• H10F39/809

  of hybrid image sensors · CPC title