Systems and methods for aluminum ion beam generation source technology

Patent metadata

Field	Value
Publication number	US-12586756-B2
Application number	US-202418426555-A
Country	US
Kind code	B2
Filing date	Jan 30, 2024
Priority date	Feb 3, 2023
Publication date	Mar 24, 2026
Grant date	Mar 24, 2026

Abstract

An implantation device is disclosed. In particular, an implantation device includes an ionization chamber having a cathode and a repeller arranged therein. A source of aluminum ions is including within the chamber, wherein a displacing gas is introduced to the chamber during an ionization process to yield a beam of energetic aluminum ions.

First claim

The invention claimed is:

1 . An ion implantation device serving as a source of aluminum ions for an ionization process, the ion implantation device comprising:
a first segment of a first shape; and a second segment of a second shape, wherein the first segment and second segment are fastened together to form a single plug configured to eject aluminum ions in a presence of a plasma; and wherein the ion implantation device comprises two of the first segment and three of the second segment.

2 . The ion implantation device according to claim 1 , wherein one of the first segments serves as a base for the ion implantation device and one of the second segments is stacked on the one of the first segments.

3 . The ion implantation device according to claim 1 , wherein each first segment has a first diameter and each second segment has a second diameter smaller than the first diameter.

4 . The ion implantation device according to claim 1 , wherein each first segment has an angled side surface between a first planar side and a second planar side.

5 . The ion implantation device according to claim 1 , wherein each second segment is cylindrical.

6 . The ion implantation device according to claim 1 , wherein the single plug is a ceramic plug.

7 . The ion implantation device according to claim 6 , wherein at least one of the first and second segments is formed of Al2O3.

8 . An ion implantation system comprising:
a housing forming an ionization chamber; a cathode and a repeller arranged within the ionization chamber; and an ion implantation device serving as a source of aluminum ions, the ion implantation device comprising first and second segments fastened together and extending into the ionization chamber and configured to eject aluminum ions in a presence of a plasma; and wherein the housing includes a hole configured to receive a fastener to secure the ion implantation device to a wall of the housing.

9 . The ion implantation system according to claim 8 , wherein the ion implantation device forms an Al2O3 ceramic plug.

10 . The ion implantation system according to claim 8 , wherein the hole and the ion implantation device are arranged within the ionization chamber at a greater distance from the repeller than the cathode.

11 . The ion implantation system according to claim 8 , further comprising:
a cover having a slit; wherein the cover encloses the housing forming the ionization chamber; and wherein the slit is oriented to permit passage of an ion beam ejected from the ionization chamber.

12 . The ion implantation system according to claim 11 , wherein the ion implantation device is arranged to extend up to but not beyond an opening defined by the slit.

13 . An ion implantation system comprising:
a housing forming an ionization chamber; a cathode and a repeller arranged within the ionization chamber; and an ion implantation device serving as a source of aluminum ions, the ion implantation device comprising first and second segments fastened together and extending into the ionization chamber and configured to eject aluminum ions in a presence of a plasma; and a fastener to fasten the first and second segments together.

14 . The ion implantation system according to claim 13 , wherein the fastener extends through a threaded channel within the first and second segments to fasten the first and second segments together.

15 . The ion implantation system device according to claim 14 , wherein an outermost diameter of the ion implantation device corresponds to a diameter of the first segment measured about a central axis aligned with the fastener.

16 . The ion implantation system according to claim 13 , further comprising a gas source to introduce a displacing gas into the ionization chamber during an ionization process to yield a beam of energetic aluminum ions.

17 . The ion implantation system according to claim 16 , wherein the beam of energetic aluminum ions has a current of approximately 3.5 mA.

18 . The ion implantation system according to claim 16 , futher comprising a scanner to direct the energetic aluminum ions toward a substrate for implantation.

19 . An ion implantation device serving as a source of aluminum ions for an ionization process, the ion implantation device comprising:
a first segment of a first shape; a second segment of a second shape; and a fastener that extends through a channel within the first and second segments to fasten the first and second segments together to form a plug configured to eject aluminum ions in a presence of a plasma.

20 . The ion implantation device according to claim 19 , wherein the first segment serves as a base for the ion implantation device and the second segment is stacked on the first segment.

21 . The ion implantation device according to claim 19 , wherein the first segment has a first diameter and the second segment has a second diameter smaller than the first diameter.

22 . The ion implantation device according to claim 19 , wherein:
the first segment has an angled side surface between a first planar side and a second planar side; and the second segment is cylindrical.

23 . THE ion implantation device according to claim 19 , wherein the first segment comprises Al2O3 and the second segment comprises Al2O3.

Assignees

• Ii Vi Advanced Mat Llc
• Ii Vi Delaware Inc

Inventors

• Hassan Ahmet
• Pong Raymond
• Turcaud Jeremy
• Schuur John

Classifications

• H10P30/21

  of electrically active species · CPC title

• H10P30/2042

  into crystalline silicon carbide · CPC title

• H01J2237/081

  Sputtering sources · CPC title

• H01J27/08

  using arc discharge · CPC title

• H01J37/3171 Primary

  for ion implantation · CPC title