Slurry composition for a chemical mechanical polishing

Patent metadata

Field	Value
Publication number	US-12584039-B2
Application number	US-202318459173-A
Country	US
Kind code	B2
Filing date	Aug 31, 2023
Priority date	Feb 9, 2023
Publication date	Mar 24, 2026
Grant date	Mar 24, 2026

Abstract

A slurry composition may include an abrasive, a solvent, and polyol. The abrasive may include any one of metal oxide, metal nitride, metal oxynitride, and a combination thereof. The polyol may have about 0.01 mM to about 500 mM of a concentration. Thus, high polishing selectivities may be provided between a B—Si layer, a TiN layer and a SiN layer by controlling a polishing rate of the TiN layer.

First claim

What is claimed is:

1 . A chemical mechanical polishing (CMP) method comprising:
applying a slurry composition to a wafer; and polishing a surface of the wafer, which includes a storage node electrode, a barrier layer, and an etch stopper, using the slurry composition, wherein the slurry composition comprises polyol absorbed in a surface of the barrier layer by a hydrogen bond.

2 . The method of claim 1 , wherein the slurry composition further comprises an abrasive and a solvent.

3 . The method of claim 1 , wherein the polyol comprises polyol in alkane group having a molecular weight of about 10 g/mol to about 1,000 g/mol.

4 . The method of claim 1 , wherein the polyol comprises any one of ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene glycol, dipropylene glycol, tripropylene glycol, 1,3-propanediol, 1,2-propanediol, 1,4-butanediol, neopentyl glycol, 2-ethyl-2-butylpropanediol, trimethylpentanediol, diethyloctanediol, 1,3-butylene glycol, cyclohexanediol, 1,4-cyclohexanedimethanol, 1,6-hexanediol, 1,2-Cyclohexanediol, 1,4-cyclohexanediol, hydrogenated bisphenol A (2,2-bis (4-hydroxycyclohexyl) propane), 2,2-dimethyl-3-hydroxypropyl, 2,2-dimethyl-3-hydroxypropionate, trimethylolethane, trimethylolpropane, glycerol, ditrimethylolpropane, pentaerythritol, dipentaerythritol, sorbitol, and a combination thereof.

5 . The method of claim 1 , wherein the slurry composition comprises about 0.005% to about 0.05% by weight of the polyol having a concentration of about 0.01 mM to about 500 mM.

6 . The method of claim 1 , wherein the barrier layer comprises a TiN layer.

7 . The method of claim 6 , wherein the storage node electrode comprises a silicon layer doped with boron, and the etch stopper comprises a silicon nitride (SiN) layer.

Assignees

• Sk Hynix Inc
• Univ Hanyang Ind Univ Coop Found

Inventors

• Shin Cheol Min
• Kang Hyun Goo
• Paik Ungyu
• Song Taeseup
• Jeong Hojin

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• H10P95/062

  involving a dielectric removal step · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• H01L21/3212

  Electricity · mapped topic