Solvent compatible nozzle plate

Patent metadata

Field	Value
Publication number	US-12583222-B2
Application number	US-202418593420-A
Country	US
Kind code	B2
Filing date	Mar 1, 2024
Priority date	Mar 19, 2021
Publication date	Mar 24, 2026
Grant date	Mar 24, 2026

Abstract

A composite photoresist material and method of making the composite photoresist material. The composite photoresist material includes: a photoresist layer devoid of a phenoxy resin, and a photoresist layer containing a phenoxy resin.

First claim

What is claimed is:

1 . A method for making a fluid ejection head, comprising the steps of:
(A) applying a layer of photoresist material to a carrier film, the layer of photoresist material comprising a phenoxy resin; (B) drying the layer to provide a dried layer; (C) applying a layer of photoresist material devoid of a phenoxy resin to the dried layer; (D) drying the layer devoid of the phenoxy resin to provide a composite photoresist laminate nozzle plate; and (E) laminating the composite photoresist laminate nozzle plate to a flow feature layer to provide the fluid ejection head, wherein the photoresist layer devoid of a phenoxy resin is configured to be adjacent to the flow feature layer of the fluid ejection head.

2 . The method of claim 1 , further comprising
(F) imaging and developing nozzle holes in the composite photoresist laminate nozzle plate.

3 . The method of claim 1 , wherein the layer of photoresist material applied to the carrier film comprises a first layer of photoresist material containing a phenoxy resin and a hydrophobicity agent and a second layer of photoresist material containing a phenoxy resin, wherein the second layer of photoresist material is devoid of a hydrophobicity agent.

4 . The method of claim 3 , wherein the hydrophobicity agent is selected from the group consisting of heptadecafluorodecyltrimethoxysilane, octadecyldimethylchlorosilane, octadecyltrichlorosilane, methyltrimethoxysilane, octyltriethoxysilane, phenyltrimethoxysilane, t-butylmethoxysilane, tetraethoxysilane, sodium methyl siliconate, vinyltrimethoxysilane, N-(3-(trimethoxysilyl)propyl)ethylenediamine, polymethylmethoxysiloxane, polydimethylsiloxane, polyethylhydrogensiloxane, and dimethyl siloxane.

5 . The method of claim 1 , wherein the composite photoresist nozzle plate is devoid of a hydrophobicity agent.

6 . The method of claim 1 , wherein the photoresist layer devoid of a phenoxy resin is also devoid of a hydrophobicity agent.

7 . The method of claim 1 , wherein the photoresist layer devoid of a phenoxy resin has a thickness ranging from about 3 to about 10 microns.

8 . The method of claim 1 , wherein the photoresist layer containing a phenoxy resin has a thickness ranging from about 3 to about 20 microns.

9 . The method of claim 1 , further comprising applying a third photoresist layer adjacent to the photoresist layer containing the phenoxy resin, wherein the third photoresist layer contains a phenoxy resin and a hydrophobicity agent.

10 . The composite photoresist material method of claim 9 , wherein the third photoresist layer has a thickness ranging from about 3 to about 20 microns.

11 . A method for making a fluid ejection head, comprising:
(A) applying a layer of photoresist material to a carrier film, the layer of photoresist material comprising a phenoxy resin; (B) drying the layer to provide a dried layer; (C) applying a layer of photoresist material devoid of a phenoxy resin to the dried layer; (D) drying the layer devoid of the phenoxy resin to provide a composite photoresist laminate nozzle plate; (E) removing the composite photoresist laminate nozzle plate from the carrier film; (F) laminating the composite photoresist laminate nozzle plate to a flow feature layer attached to a semiconductor substrate, wherein the photoresist layer devoid of a phenoxy resin is configured to be adjacent to the flow feature layer of the fluid ejection head; and (G) imaging and developing nozzle holes in the composite photoresist laminate nozzle plate to provide the fluid ejection head.

12 . The method of claim 11 , wherein the composite photoresist nozzle plate is devoid of a hydrophobicity agent.

13 . The method of claim 11 , wherein the photoresist layer devoid of a phenoxy resin is also devoid of a hydrophobicity agent.

14 . The method of claim 11 , wherein the photoresist layer devoid of a phenoxy resin has a thickness ranging from about 3 to about 10 microns.

15 . The method of claim 11 , wherein the photoresist layer containing a phenoxy resin has a thickness ranging from about 3 to about 20 microns.

16 . The method of claim 11 , further comprising applying a third photoresist layer adjacent to the photoresist layer containing the phenoxy resin, wherein the third photoresist layer contains a phenoxy resin and a hydrophobicity agent.

17 . The composite photoresist material method of claim 16 , wherein the third photoresist layer has a thickness ranging from about 3 to about 20 microns.

Assignees

• Brady Worldwide Inc

Inventors

• Weaver Sean T

Classifications

• G03F7/0755

  Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds (G03F7/0752 takes precedence) · CPC title

• G03F7/0045

  with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

• B41J2/164

  thin film formation · CPC title

• B41J2/1603

  of the front shooter type · CPC title

• B41J2202/03

  Specific materials used · CPC title