Carrier substrate, laminate, and method for manufacturing electronic device

Patent metadata

Field	Value
Publication number	US-12581730-B2
Application number	US-202218066497-A
Country	US
Kind code	B2
Filing date	Dec 15, 2022
Priority date	Jul 3, 2015
Publication date	Mar 17, 2026
Grant date	Mar 17, 2026

Abstract

A carrier substrate to be used, when manufacturing a member for an electronic device on a surface of a substrate, by being bonded to the substrate, includes at least a first glass substrate. The first glass substrate has a compaction described below of 80 ppm or less. Compaction is a shrinkage in a case of subjecting the first glass substrate to a temperature raising from a room temperature at 100° C./hour and to a heat treatment at 600° C. for 80 minutes, and then to a cooling to the room temperature at 100° C./hour.

First claim

The invention claimed is:

1 . A method for manufacturing an electronic device, the method comprising:
forming a member for an electronic device on a surface of a substrate of a laminate comprising a carrier substrate and the substrate formed on the carrier substrate to obtain a member for an electronic device-attached-laminate; and removing the carrier substrate from the member for an electronic device-attached-laminate to obtain an electronic device having the substrate and the member for an electronic device, wherein the carrier substrate comprises at least a first glass substrate, the first glass substrate has a compaction of from 20 to 80 ppm, wherein the compaction is determined as a shrinkage when subjecting the first glass substrate to a temperature raising from a room temperature at 100° C./hour and to a heat treatment at 600° C. for 80 minutes, and then to a cooling to the room temperature at 100° C./hour, the first glass substrate comprises a glass comprising, in terms of mass percentages based on oxides, the following: from 57% to 62.1% of SiO 2 , from 19% to 24% of Al 2 O 3 , from 2.6% to less than 5% of B 2 O 3 , from 2% to 6% of MgO, from 4.1% to 7% of CaO, from 2.3% to 9% of SrO, from 1% to 10% of BaO, and from 14% to 16% of MgO+CaO+SrO+BaO, and the first glass substrate has a strain point of at least 700° C.

2 . The method for manufacturing an electronic device according to claim 1 , wherein the compaction is from 20 to 70 ppm.

3 . The method for manufacturing an electronic device according to claim 1 , wherein the member for an electronic device comprises a low-temperature polysilicon (LTPS).

4 . The method for manufacturing an electronic device according to claim 1 , wherein in the forming of the member for an electronic device a temperature is at least 450° C.

5 . The method for manufacturing an electronic device according to claim 1 , wherein the carrier substrate further comprises an adhesive layer formed on the first glass substrate.

Assignees

• Agc Inc

Inventors

• Ono Kazutaka
• Yaoita Takatoshi
• Usui Reo
• Ebata Kenichi
• Akiyama Jun

Classifications

• G02F2202/104

  poly-Si · CPC title

• G02F1/1368

  in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title

• G02F1/1341

  Filling or closing of cells · CPC title

• G02F1/133516

  Methods for their manufacture, e.g. printing, electro-deposition or photolithography · CPC title

• B32B2315/08

  Glass · CPC title