Metal-oxide thin-film transistor and method for manufacturing same, x-ray detector, and display panel

Patent metadata

Field	Value
Publication number	US-12581706-B2
Application number	US-202117798347-A
Country	US
Kind code	B2
Filing date	Oct 22, 2021
Priority date	Mar 15, 2021
Publication date	Mar 17, 2026
Grant date	Mar 17, 2026

Abstract

Provided is a method for manufacturing a metal-oxide thin-film transistor (TFT). The method includes: forming, on a base substrate, an active layer including a metal oxide semiconductor, and a functional layer laminated on the active layer and containing a lanthanide element; and annealing the active layer and the functional layer, such that the lanthanide element in the functional layer is diffused into the active layer.

First claim

What is claimed is:

1 . A method for manufacturing a metal-oxide thin-film transistor (TFT), comprising:
forming, on a base substrate, an active layer comprising a metal oxide semiconductor, and a functional layer laminated on the active layer and containing a lanthanide element; and annealing the active layer and the functional layer, such that the lanthanide element in the functional layer is diffused into the active layer, wherein upon annealing the active layer and the functional layer, the method further comprises: removing the functional layer.

2 . The method according to claim 1 , wherein the annealing is carried out at a temperature ranging from 200 to 450° C., for a time duration ranging from 0.5 to 3 h, and in an atmosphere containing dry air or oxygen.

3 . The method according to claim 1 , wherein forming, on the base substrate, the active layer comprising the metal oxide semiconductor, and the functional layer laminated on the active layer and containing the lanthanide element comprises:
successively forming a metal-oxide-semiconductor thin film and a thin film containing the lanthanide element on the base substrate; forming a first photoresist pattern on the thin film containing the lanthanide element; forming the active layer and the functional layer laminated on the active layer by etching the metal-oxide-semiconductor thin film and the thin film containing the lanthanide element using a same etching solution; and removing the first photoresist pattern.

4 . The method according to claim 1 , wherein removing the functional layer comprises:
forming a source-drain electrode metal layer on the base substrate comprising the functional layer; forming a second photoresist pattern on the source-drain electrode metal layer; and etching the source-drain electrode metal layer and the functional layer, such that the source-drain electrode metal layer forms a source-drain electrode, and a portion, outside a first region, of the functional layer is etched, wherein the first region is an orthographic projection region of the source-drain electrode on the active layer, and the source-drain electrode comprises a source electrode and a drain electrode.

5 . The method according to claim 1 , wherein
forming, on the base substrate, the active layer comprising the metal oxide semiconductor, and the functional layer laminated on the active layer and containing the lanthanide element comprises: forming the active layer on the base substrate; forming a thin film containing the lanthanide element on the base substrate comprising the active layer, wherein the active layer is defined by a top face, a bottom face, and a side face connected between the top face and the bottom face, the bottom face facing towards the base substrate, and the thin film containing the lanthanide element covering the top face and the side face of the active layer; and annealing the active layer and the functional layer comprises: annealing the active layer and the thin film containing the lanthanide element, such that the lanthanide element is diffused from the thin film containing the lanthanide element into the top face and the side face of the active layer.

6 . The method according to claim 1 , wherein a material of the functional layer comprises a single-metal oxide or a multi-metal oxide containing the lanthanide element.

7 . The method according to claim 1 , wherein a material of the functional layer comprises one or more of a praseodymium oxide, a samarium oxide, a cerium oxide, an indium-zinc-praseodymium oxide, and an indium-zinc-samarium oxide.

Assignees

• Boe Technology Group Co Ltd

Inventors

• Hu hehe
• Liu Fengjuan
• Yuan Guangcai
• He Jiayu
• Ning ce
• Li Zhengliang
• Zhao Kun

Classifications

• H10P32/17

  characterised by the semiconductor material · CPC title

• H10P32/14

  within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase · CPC title

• H10D99/00 Primary

  Subject matter not provided for in other groups of this subclass · CPC title

• H10D62/80

  characterised by the materials · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title