Film-forming material, film-forming slurry, spray coated film, and spray coated member

US12577647B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12577647-B2
Application numberUS-202118273086-A
CountryUS
Kind codeB2
Filing dateDec 22, 2021
Priority dateJan 28, 2021
Publication dateMar 17, 2026
Grant dateMar 17, 2026

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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The film is formed using one of two film-forming materials. The first film-forming material contains: particles containing a crystal phase of a rare earth element fluoride; particles containing a crystal phase of a rare earth element oxide; and particles containing a crystal phase of a rare earth element ammonium fluoride double salt. The second film-forming material contains: particles containing a crystal phase of a rare earth element fluoride; and particles containing a crystal phase of a rare earth element oxide and a crystal phase of a rare earth element ammonium fluoride double salt. If a spray coated film is to be formed by means of thermal spraying using this film-forming material or film-forming slurry in particular, it is possible to form a rare earth element oxyfluoride spray coated film without the need for excessive heat.

First claim

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The invention claimed is: 1 . A film-forming material comprising: particles containing a crystal phase of a rare-earth fluoride; particles containing a crystal phase of a rare-earth oxide; and particles containing a crystal phase of an ammonium rare-earth fluoride double salt. 2 . The film-forming material of claim 1 , wherein the particles containing the crystal phase of the rare-earth oxide and the particles containing the crystal phase of the ammonium rare-earth fluoride double salt form composite particles in which they are mutually dispersed. 3 . The film-forming material of claim 1 , wherein the particles containing the crystal phase of the rare-earth oxide are rare-earth oxide particles, and the particles containing the crystal phase of the ammonium rare-earth fluoride double salt are ammonium rare-earth fluoride double salt particles. 4 . A film-forming material comprising; particles containing a crystal phase of a rare-earth fluoride; and particles containing a crystal phase of a rare-earth oxide and a crystal phase of an ammonium rare-earth fluoride double salt. 5 . The film-forming material of claim 4 , wherein the particles containing the crystal phase of the rare-earth oxide and the crystal phase of the ammonium rare-earth fluoride double salt form composite particles in which particles containing the crystal phase of the rare-earth oxide serve as a matrix, and particles or a layer containing the crystal phase of the ammonium rare-earth fluoride double salt are dispersed at a surface and/or an interior of the particles containing the crystal phase of the rare-earth oxide. 6 . The film-forming material of claim 5 , wherein the particles containing the crystal phase of the rare-earth oxide are rare-earth oxide particles, and the particles or layer containing the crystal phase of the ammonium rare-earth fluoride double salt are particles or a layer of the ammonium rare-earth fluoride double salt. 7 . The film-forming material of claim 1 , wherein the particles containing the crystal phase of the rare-earth fluoride are rare-earth fluoride particles. 8 . The film-forming material of claim 1 , wherein the material does not contain a crystal phase of a rare-earth oxyfluoride. 9 . The film-forming material of claim 1 , wherein the ammonium rare-earth fluoride double salt includes one or more selected from the group consisting of (NH 4 ) 3 R 3 F 6 , NH 4 R 3 F 4 , NH 4 R 3 2 F 7 and (NH 4 ) 3 R 3 2 F 9 , wherein each R 3 is one or more selected from rare-earth elements inclusive of Sc and Y. 10 . The film-forming material of claim 1 , wherein the material has an oxygen content of from 0.3 to 10 wt %. 11 . The film-forming material of claim 1 wherein, at crystal phase diffraction peaks detected within a diffraction angle range of 2θ=10 to 70° in x-ray diffraction using the CuKα line as the characteristic x-ray, X F0 has a value of 0.01 or more, wherein the X F0 is computed from the formula X F ⁢ 0 = I ⁡ ( RNF ) / ( I ⁡ ( RF ) + I ⁡ ( RO ) ) , wherein I(RNF) is the integrated intensity of the largest diffraction peak attributable to the ammonium rare-earth fluoride double salt, I(RF) is the integrated intensity of the largest diffraction peak attributable to the rare-earth fluoride, and I(RO) is the integrated intensity of the largest diffraction peak attributable to the rare-earth oxide. 12 . The film-forming material of claim 1 , wherein the particles containing the crystal phase of the rare-earth fluoride have an average particle size D50(F1), defined as the cumulative 50% size as a median size in the volume-based particle size distribution measured after mixing the particles in 30 mL of water and one minute of ultrasonic dispersion treatment at 40 W, of from 0.5 to 10 μm. 13 . The film-forming material of claim 1 wherein, in the particle size distribution of the particles containing the crystal phase of the rare-earth fluoride, the value of P D is 4 or less, wherein the value of P D is computed from the following formula, P D = ( ( D ⁢ 90 ⁢ ( F ⁢ 1 ) - D ⁢ 10 ⁢ ( F ⁢ 1 ) ) / D ⁢ 50 ⁢ ( F ⁢ 1 ) wherein D90(F1) is the cumulative 90% size in the volume-based particle size distribution measured after mixing the particles in 30 mL of water and one minute of ultrasonic dispersion treatment at 40 W, D10(F1) is the cumulative 10% size in the volume-based particle size distribution measured after mixing the particles in 30 mL of water and one minute of ultrasonic dispersion treatment at 40 W, and D50(F1) is the cumulative 50% size as a median size in the volume-based particle size distribution measured after mixing the particles in 30 mL of water and one minute of ultrasonic dispersion treatment at 40 W. 14 . The film-forming material of claim 1 , wherein the particles containing the crystal phase of the rare-earth fluoride have a BET specific surface area of 10 m 2 /g or less. 15 . The film-forming material of claim 1 , wherein the particles containing the crystal phase of the rare-earth fluoride has a loose bulk density of at least 0.6 g/cm3. 16 . T

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What does patent US12577647B2 cover?
The film is formed using one of two film-forming materials. The first film-forming material contains: particles containing a crystal phase of a rare earth element fluoride; particles containing a crystal phase of a rare earth element oxide; and particles containing a crystal phase of a rare earth element ammonium fluoride double salt. The second film-forming material contains: particles contain…
Who is the assignee on this patent?
Shinetsu Chemical Co
What technology area does this patent fall under?
Primary CPC classification C23C4/04. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Mar 17 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).