Zinc oxide nanomaterial and preparation method thereof and semiconductor device

Patent metadata

Field	Value
Publication number	US-12575248-B2
Application number	US-202217851536-A
Country	US
Kind code	B2
Filing date	Jun 28, 2022
Priority date	Jun 15, 2020
Publication date	Mar 10, 2026
Grant date	Mar 10, 2026

Abstract

A zinc oxide (ZnO) nanomaterial includes a ZnO nanoparticle and a surface ligand. The surface ligand bonded to the ZnO nanoparticle has a structure of

R 1 , R 2 , R 3 , R 4 , and R 5 are independently selected from at least one of hydrogen, alkoxy group with a carbon number of one to three, or amino group. R 1 , R 2 , R 3 , R 4 , and R 5 include one to three alkoxy groups with a carbon number of one to three and zero to one amino group.

First claim

What is claimed is:

1 . A zinc oxide (ZnO) nanomaterial comprising:
a ZnO nanoparticle; and a surface ligand bonded to the ZnO nanoparticle, the surface ligand being at least one selected from m-methoxybenzamide, o-methoxybenzamide, p-ethoxybenzamide, m-ethoxybenzamide, o-ethoxybenzamide, 2,5-dimethoxybenzamide, 3,5-dimethoxybenzamide, 2,4-dimethoxybenzamide, 3,4-dimethoxybenzamide, or 5-amino-4-methoxybenzamide

2 . The ZnO nanomaterial according to claim 1 , wherein the ZnO nanomaterial is composed of the ZnO nanoparticle and the surface ligand bonded to the ZnO nanoparticle.

3 . The ZnO nanomaterial according to claim 1 , wherein a molar ratio of the ZnO nanoparticle to the surface ligand bonded to the ZnO nanoparticle ranges from 1:5 to 1:50.

4 . A preparation method of a zinc oxide (ZnO) nanomaterial comprising:
preparing a mixed solution of a ZnO nanoparticle and a surface ligand; and causing the ZnO nanoparticle to react with the surface ligand in the mixed solution to prepare ZnO nanoparticle having the surface ligand bonded thereto; wherein:
the surface ligand has a structure of

R 1 , R 2 , R 3 , R 4 , and R 5 are independently selected from at least one of hydrogen, alkoxy group with a carbon number of one to three, or amino group; and
R 1 , R 2 , R 3 , R 4 , and R 5 include:
one to three alkoxy groups with a carbon number of one to three; and
zero to one amino group.

5 . The method according to claim 4 , wherein:
R 1 , R 2 , R 3 , R 4 , and R 5 include:
two alkoxy groups with a carbon number of one to three; and
zero to one amino group; and
at least R 2 or R 3 is selected from alkoxy group with a carbon number of one to three.

6 . The method according to claim 4 , wherein the surface ligand is at least one selected from p-methoxybenzamide, m-methoxybenzamide, o-methoxybenzamide, p-ethoxybenzamide, m-ethoxybenzamide, o-ethoxybenzamide, 2,5-dimethoxybenzamide, 3,5-dimethoxybenzamide, 2,5-dimethoxybenzamide, 3,4-dimethoxybenzamide, or 5-amino-4-methoxybenzamide.

7 . The method according to claim 4 , wherein the ZnO nanomaterial is composed of the ZnO nanoparticle and the surface ligand bonded to the ZnO nanoparticle.

8 . The method according to claim 4 , wherein in the mixed solution, a molar ratio of the ZnO nanoparticle to the surface ligand ranges from 1:5 to 1:50.

9 . The method according to claim 4 , wherein during preparing the mixed solution and reacting to prepare the ZnO nanoparticle having the ligand, a reaction temperature ranges from 20 to 60° C.

10 . A semiconductor device comprising:
an anode and a cathode arranged oppositely to each other; an active layer arranged between the anode and the cathode; and an electron transport layer arranged between the active layer and the cathode; wherein:
a material of the electron transport layer includes a zinc oxide (ZnO) nanomaterial;
the ZnO nanomaterial includes:
a ZnO nanoparticle; and
a surface ligand bonded to the ZnO nanoparticle, the surface ligand being at least one selected from m-methoxybenzamide, o-methoxybenzamide, p-ethoxybenzamide, m-ethoxybenzamide, o-ethoxybenzamide, 2,5-dimethoxybenzamide, 3,5-dimethoxybenzamide, 2,4-dimethoxybenzamide, 3,4-dimethoxybenzamide, or 5-amino-4-methoxybenzamide

11 . The semiconductor device according to claim 10 , wherein the ZnO nanomaterial is composed of the ZnO nanoparticle and the surface ligand bonded to the ZnO nanoparticle.

12 . The semiconductor device according to claim 10 , wherein a molar ratio of the ZnO nanoparticle to the surface ligand bonded to the ZnO nanoparticle ranges from 1:5 to 1:50.

13 . The semiconductor device according to claim 10 , wherein the active layer is a quantum dot light-emitting layer.

14 . The semiconductor device according to claim 13 , wherein the quantum dot light-emitting layer is at least selected from cadmium sulfide (CdS) or cadmium selenide (CdSe).

15 . The semiconductor device according to claim 10 , wherein:
the anode is at least selected from a doped metal oxide; and the cathode is at least selected from a conductive carbon material, a conductive metal oxide material, or a metal material.

16 . The semiconductor device according to claim 10 , further comprising:
a hole functional layer including:
a hole injection layer; and
a hole transport layer at least selected from poly([(9,9-dioctylfluorene-alt-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(4-sec-butylphenyl)-)diphenylamine))] (TFB) or polyvinylcarbazole (PVK).

Assignees

• Tcl Tech Group Corp

Inventors

• Li Junjie
• Zhang Tianshuo
• Guo Yulin

Classifications

• H10K30/50

  Photovoltaic [PV] devices · CPC title

• H10K2102/00

  Constructional details relating to the organic devices covered by this subclass · CPC title

• H10K85/381

  Metal complexes comprising a group IIB metal element, e.g. comprising cadmium, mercury or zinc · CPC title

• H10K85/211

  Fullerenes, e.g. C60 · CPC title

• H10K85/151

  Copolymers · CPC title