Light emitting device having a reflective layer comprising atomic crystal material and preparation method thereof, light emitting substrate and preparation method thereof

Patent metadata

Field	Value
Publication number	US-12575232-B2
Application number	US-202117920017-A
Country	US
Kind code	B2
Filing date	Oct 28, 2021
Priority date	Oct 28, 2021
Publication date	Mar 10, 2026
Grant date	Mar 10, 2026

Abstract

A light emitting device and a preparation method therefor, and a light emitting substrate and a preparation method therefor are provided. The light emitting device includes an underlay substrate, a light emitting functional layer disposed on the underlay substrate, and a reflective layer disposed on the underlay substrate and covering at least part of the light emitting functional layer, the reflective layer includes a first material layer and a second material layer, the first material layer and the second material layer are stacked along a thickness direction of the underlay substrate, the first material layer includes an atomic crystal material, the first material layer is at one side of the second material layer away from the underlay substrate, and a surface of the first material layer away from the second material layer is formed as a surface of the reflective layer away from the underlay substrate.

First claim

The invention claimed is:

1 . A light emitting device, comprising an underlay substrate, a light emitting functional layer disposed on the underlay substrate, and a reflective layer which is disposed on the underlay substrate and covers at least part of the light emitting functional layer, wherein the reflective layer comprises a first material layer and a second material layer, the first material layer and the second material layer are stacked along a thickness direction of the underlay substrate, the first material layer comprises an atomic crystal material, the first material layer is located at one side of the second material layer away from the underlay substrate, and a surface of the first material layer away from the second material layer is formed as a surface of the reflective layer away from the underlay substrate;
wherein the reflective layer further comprises a plurality of third material layers, and a plurality of the second material layers are provided; the third material layers and the first material layer comprise a same atomic crystal material, and one of the second material layers is disposed on a surface of the first material layer facing the underlay substrate; the reflective layer comprises n second material layers, n−1 third material layers, and one first material layer which are stacked, wherein n is an integer greater than 3; and an optical thickness of each of the first material layer, a second material layer, and a third material layer is a quarter of a central reflection wavelength of the reflective layer.

2 . The light emitting device of claim 1 , wherein the first material layer comprises at least one of aluminum oxide, silicon dioxide, and aluminum nitride.

3 . The light emitting device of claim 1 , wherein the second material layer comprises a titanium dioxide material.

4 . The light emitting device of claim 1 , wherein the light emitting functional layer comprises a first semiconductor layer, a quantum well layer, a second semiconductor layer, and a conductive layer disposed in sequence on the underlay substrate, wherein the first semiconductor layer comprises a first portion and a second portion, a vertical projection of the first portion on the underlay substrate overlaps with a vertical projection of the quantum well layer and the second semiconductor layer on the underlay substrate; a vertical projection of the second portion on the underlay substrate does not overlap with the vertical projection of the quantum well layer and the second semiconductor layer on the underlay substrate.

5 . The light emitting device of claim 4 , further comprising a first electrode and a second electrode, wherein the first electrode is disposed on the second portion of the first semiconductor layer, and the second electrode is disposed on the second semiconductor layer.

6 . The light emitting device of claim 5 , wherein a vertical projection of the reflective layer on the underlay substrate overlaps with a vertical projection of the first electrode and the second electrode on the underlay substrate.

7 . The light emitting device of claim 6 , further comprising a first pad and a second pad, wherein the first pad and the second pad are both disposed at one side of the reflective layer away from the underlay substrate, a first via hole and a second via hole are formed in the reflective layer, the first pad is connected to the first electrode through the first via hole, and the second pad is connected to the second electrode through the second via hole.

8 . The light emitting device of claim 7 , wherein in a first direction of the light emitting device, the light emitting device has a first length, the first length being L, the first pad and the second pad are arranged at intervals in the first direction, a distance between an edge of the first pad close to the second pad and an edge of the second pad close to the first pad is D, and the first length L and the distance D satisfy a relational formula: 33% L≤D≤66% L.

9 . The light emitting device of claim 7 , wherein an edge of the first pad away from the second pad is flush with an edge of the light emitting functional layer at one side, and an edge of the second pad away from the first pad is flush with an edge of the light emitting functional layer at another side.

10 . The light emitting device of claim 1 , wherein the light emitting device is a light emitting diode.

11 . A light emitting substrate, comprising a drive substrate and the light emitting devices of claim 1 arranged in an array on the drive substrate.

12 . A method for preparing a light emitting device, comprising:
forming a light emitting functional layer on an underlay substrate; and forming a reflective layer on the underlay substrate; the reflective layer covers at least part of the light emitting functional layer; wherein the reflective layer at least comprises a first material layer, the first material layer comprises an atomic crystal material, the reflective layer further comprises a second material layer, the first material layer and the second material layer are stacked along a thickness direction of the underlay substrate, the first material layer is located at one side of the second material layer away from the underlay substrate, and a surface of the first material layer away from the second material layer is formed as a surface of the reflective layer away from the underlay substrate; wherein the reflective layer further comprises a plurality of third material layers, and a plurality of the second material layers are provided; the third material layers and the first material layer comprise a same atomic crystal material, and one of the second material layers is disposed on a surface of the first material layer facing the underlay substrate; the reflective layer comprises n second material layers, n−1 third material layers, and one first material layer which are stacked, wherein n is an integer greater than 3; and an optical thickness of each of the first material layer, a second material layer, and a third material layer is a quarter of a central reflection wavelength of the reflective layer.

13 . The method for preparing the light emitting device of claim 12 , wherein forming the reflective layer on the underlay substrate comprises:
forming the second material layer of the reflective layer by an atomic layer deposition process.

14 . The method for preparing the light emitting device of claim 12 , wherein the second material layer comprises a titanium dioxide material, and forming the reflective layer on the underlay substrate comprises:
forming the second material layer of the reflective layer by an electron beam evaporation process, wherein a partial pressure of oxygen is 1×10 −2 to 5×10 −2 in a process of depositing the second material layer.

15 . A method for preparing a light emitting substrate, comprising:
forming a light emitting device by using the method for preparing the light emitting device of claim 12 ; forming a first pad and a second pad on the reflective layer of the light emitting device; welding the first pad and the second pad to a drive substrate respectively through flux; and removing the flux remaining on the reflective layer.

16 . The method for preparing the light emitting substrate of claim 15 , wherein removing the flux remaining on the reflective layer comprises:
removing the flux remaining on the reflective layer at a temperature of 60-180° C.; or, cleaning and removing the flux remaining on the reflective layer.

Assignees

• Boe Mled Technology Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Zhao Jiawei
• Ma Junjie
• Xiong Zhijun
• Yang Shanwei
• Sun Yuanhao
• Lu Yuanda
• Li Xueqiao

Classifications

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/0363

  of optical field-shaping means · CPC title

• H10H20/0362

  of encapsulations · CPC title

• H10H20/854

  characterised by their material, e.g. epoxy or silicone resins · CPC title

• H10H20/034

  of coatings · CPC title