Solar cell

Patent metadata

Field	Value
Publication number	US-12575218-B2
Application number	US-202418806855-A
Country	US
Kind code	B2
Filing date	Aug 16, 2024
Priority date	Mar 29, 2024
Publication date	Mar 10, 2026
Grant date	Mar 10, 2026

Abstract

A solar cell, a preparation method thereof, a photovoltaic module, and a photovoltaic system, wherein the solar cell includes a substrate and a first tunnel oxide layer and a passivation medium layer sequentially stacked on a first surface of the substrate. The first tunnel oxide layer is at least partially in contact with the first surface. The passivation medium layer includes at least a transparent conductive oxide layer.

First claim

What is claimed is:

1 . A solar cell, comprising:
a substrate comprising a first surface and a second surface opposite to the first surface, the first surface including an electrode region and a non-electrode region; a first tunnel oxide layer disposed on the first surface of the substrate and at least partially in contact with the first surface; and a passivation medium layer disposed on a surface of the first tunnel oxide layer away from the substrate, the passivation medium layer including at least a transparent conductive oxide layer; and a first passivating contact layer only disposed on the first surface and located in the electrode region, the first passivating contact layer at least including a first doped semiconductor layer; wherein orthographic projections of the first tunnel oxide layer and the passivation medium layer on the first surface include an overlapping region; the overlapping region is located at least in the non-electrode region of the first surface; the first tunnel oxide layer is in contact with the first surface in the non-electrode region; the first passivating contact layer is disposed on the first surface and located in the electrode region; the first tunnel oxide layer includes a first portion and a second portion; the first portion is in contact with the first surface in the non-electrode region; the second portion is spaced from the first surface in the electrode region, and the second portion is disposed on a surface of the first passivating contact layer away from the first surface.

2 . The solar cell according to claim 1 , wherein a material of the transparent conductive oxide layer includes a doped metal oxide;
the doped metal oxide includes zinc oxide doped with at least one of aluminum, boron, or gallium.

3 . The solar cell according to claim 1 , wherein a thickness of the transparent conductive oxide layer is in a range from 5 nm to 20 nm.

4 . The solar cell according to claim 1 , wherein the passivation medium layer includes a transparent conductive oxide layer and a first passivation layer; the first passivation layer is disposed on a surface of the transparent conductive oxide layer away from the first tunnel oxide layer.

5 . The solar cell according to claim 1 , wherein the passivation medium layer includes at least one transparent conductive oxide layer and at least one first passivation layer; or
the passivation medium layer includes one transparent conductive oxide layer and one first passivation layer, and the transparent conductive oxide layer and the first passivation layer are sequentially stacked along a direction away from the first tunnel oxide layer; or the passivation medium layer includes at least two transparent conductive oxide layers and at least two first passivation layers, and the transparent conductive oxide layers and the first passivation layers are alternately stacked along a direction away from the first tunnel oxide layer.

6 . The solar cell according to claim 1 , wherein the first passivating contact layer further includes a second tunnel oxide layer, the second tunnel oxide layer and the first doped semiconductor layer are stacked sequentially on the first surface in the electrode region.

7 . The solar cell according to claim 1 , further comprising a first electrode, wherein an orthographic projection of the first electrode on the first surface is located in the electrode region of the first surface, and the first electrode is in Ohmic contact with the first passivating contact layer.

8 . The solar cell according to claim 7 , wherein along a width direction of the first electrode, a size ratio of the first electrode to the first passivating contact layer is greater than 0 and less than or equal to 1.

9 . The solar cell according to claim 1 , further comprising a second passivation layer, wherein the second passivation layer is disposed on a surface of the passivation medium layer away from the first tunnel oxide layer.

10 . The solar cell according to claim 1 , further comprising a second passivating contact layer, wherein the second passivating contact layer is disposed on the second surface of the substrate.

11 . The solar cell according to claim 10 , wherein the second passivating contact layer includes a third tunnel oxide layer and a second doped semiconductor layer sequentially stacked on the second surface.

12 . The solar cell according to claim 10 , further comprising a second electrode, wherein the second electrode is disposed on the second surface of the substrate, and the second electrode is in Ohmic contact with the second passivating contact layer.

13 . The solar cell according to claim 10 , further comprising a third passivation layer, wherein the third passivation layer is disposed on a surface of the second passivating contact layer away from the substrate.

14 . The solar cell according to claim 2 , wherein the doped metal oxide is selected from the group consisting of aluminum-doped zinc oxide, gallium-doped zinc oxide, boron-doped zinc oxide, and any combination thereof.

15 . A solar cell, comprising:
a substrate comprising a first surface and a second surface opposite to the first surface, the first surface including an electrode region and a non-electrode region; a first tunnel oxide layer disposed on the first surface of the substrate and at least partially in contact with the first surface; and a passivation medium layer disposed on a surface of the first tunnel oxide layer away from the substrate, the passivation medium layer including at least a transparent conductive oxide layer; and a first passivating contact layer only disposed on the first surface and located in the electrode region, the first passivating contact layer at least including a first doped semiconductor layer; wherein orthographic projections of the first tunnel oxide layer and the passivation medium layer on the first surface include an overlapping region; the overlapping region is located at least in the non-electrode region of the first surface; the first tunnel oxide layer includes a first portion and a second portion; the first portion is in contact with the first surface in the non-electrode region, and the second portion is in contact with the first surface in the electrode region; the first passivating contact layer is disposed on a surface of the second portion away from the substrate; the first doped semiconductor layer is disposed on a surface of the second portion away from the substrate; the first passivating contact layer further includes a second tunnel oxide layer; the second tunnel oxide layer is disposed on a surface of the first doped semiconductor layer away from the second portion.

Assignees

• Trina Solar Co Ltd

Inventors

• Chen Daming
• Liu Wei
• Chen Yifeng
• Lv Dongyun

Classifications

• H10F77/315

  the coatings being antireflective or having enhancing optical properties · CPC title

• H10F77/215

  Geometries of grid contacts · CPC title

• H10F77/311 Primary

  for photovoltaic cells · CPC title

• H10F71/138

  Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes · CPC title

• H10F77/703

  of the semiconductor bodies, e.g. textured active layers · CPC title