Semiconductor device and method of fabricating a semiconductor device

Patent metadata

Field	Value
Publication number	US-12575176-B2
Application number	US-202318121339-A
Country	US
Kind code	B2
Filing date	Mar 14, 2023
Priority date	Mar 24, 2022
Publication date	Mar 10, 2026
Grant date	Mar 10, 2026

Abstract

In an embodiment, a semiconductor device includes a vertical power FET for switching a load current, the power FET including a channel region of a first conductivity type and a first lateral FET and a second lateral FET providing an output stage of gate driver circuitry for driving the power FET. The first lateral FET includes a channel region of the first conductivity type and the second lateral FET includes a channel region of a second conductivity type opposing the first conductivity type. The power FET and the first and second lateral FETs are monolithically integrated into a semiconductor substrate of the first conductivity type and that has a first surface. A drain of the first lateral FET and a source of the second lateral FET are electrically coupled to a gate of the power FET.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
a vertical power FET configured to switch a load current and provide a channel region of a first conductivity type; and
a first lateral FET and a second lateral FET providing an output stage of gate driver circuitry configured to drive the power FET, wherein the first lateral FET is configured to provide a channel region of the first conductivity type and the second lateral FET is configured to provide a channel region of a second conductivity type opposing the first conductivity type;
wherein the power FET and the first and second lateral FETs are monolithically integrated into a semiconductor substrate of the first conductivity type,
wherein a drain of the first lateral FET and a source of the second lateral FET are electrically coupled to a gate of the power FET.

2 . The semiconductor device of claim 1 , wherein a well of the second conductivity type is formed in a first surface of the semiconductor substrate, wherein the first lateral FET is formed in the well and comprises a gate electrode arranged in a first gate trench formed in the first surface, the gate electrode being electrically insulated from the well by a first insulating layer, a source region of the first conductivity type and a drain region of the first conductivity type that are arranged on opposing sides of the gate electrode and in the well.

3 . The semiconductor device of claim 2 , wherein the first lateral FET further comprises a lightly doped drift region of the first conductivity type that extends from the drain region under the first gate trench.

4 . The semiconductor device of claim 2 , wherein the first insulating layer has a thickness on the base of the first gate trench that provides the gate insulation layer for the gate electrode and has a thickness between a side wall of the first gate trench that is formed by the drain region and the gate electrode that is greater than the thickness on the base.

5 . The semiconductor device of claim 2 , wherein:
the first gate trench has a base and side walls, wherein the side walls extend substantially perpendicular to the first surface or are inclined to the first surface to form a tapered trench, and/or an edge between the base and the side walls is rounded.

6 . The semiconductor device of claim 1 , wherein the second lateral FET is formed in the semiconductor substrate and comprises a gate electrode arranged in a second gate trench formed in the first surface of the semiconductor substrate, the gate electrode being electrically insulated from the semiconductor substrate by a second insulating layer, a source region of the second conductivity type and a drain region of the second conductivity type that are arranged on opposing sides of the gate electrode.

7 . The semiconductor device of claim 6 , wherein the second lateral FET further comprises a lightly doped drift region of the second conductivity type that extends from the drain region under the second gate trench.

8 . The semiconductor device of claim 6 , wherein the second insulating layer has a thickness on the base of the second gate trench that provides the gate insulation layer for the gate electrode and has a thickness between the side wall of the second gate trench that is formed by the drain region and the gate electrode that is greater than the thickness on the base.

9 . The semiconductor device of claim 1 , wherein the power FET comprises a plurality of third trenches extending into the semiconductor substrate from the first surface, wherein the semiconductor substrate provides the drift region of the vertical power FET, wherein each third trench comprises a field plate that is electrically insulated from the semiconductor substrate, wherein the power FET further comprises a drain region arranged at a second surface of the semiconductor substrate opposing the first surface, a body region of the second conductivity type arranged on the drift region and a source region of the first conductivity type arranged on the body region.

10 . The semiconductor device of claim 9 , wherein each of the plurality of third trenches further comprises a gate electrode arranged above and electrically insulated from the field plate.

11 . The semiconductor device of claim 9 , wherein the power FET further comprises a plurality of gate trenches comprising a gate electrode, one gate trench being arranged between adjacent ones of the plurality of third trenches.

12 . The semiconductor device of claim 10 , wherein the third trenches are columnar or elongate.

13 . A method for forming a vertical power FET for switching a load current, a first lateral FET and a second lateral FET in a common semiconductor substrate, the method comprising:
providing a semiconductor substrate of a first conductivity type, the semiconductor substrate comprising:
a first surface, a plurality of trenches for a vertical power FET in the first surface, each comprising a field plate that is electrically insulted from the semiconductor substrate,
a first predefined region for a first lateral FET comprising a channel region of the first conductivity type, and
a second predefined region for a second lateral FET comprising a channel region of a second conductivity type opposing the first conductivity type;
forming a well of the second conductive type in the first surface of the semiconductor substrate in the first predefined region; forming a first gate trench in the first surface of the semiconductor substrate for a first gate electrode in the first predefined region and forming a second gate trench in the first surface of the semiconductor substrate for a second gate electrode in the second predefined region; forming a gate insulating layer that covers the side walls and base of the first and second gate trenches, the first surface of the semiconductor substrate and the upper portion of the plurality of trenches; inserting conductive material into the first and second gate trenches and in the plurality of trenches to form a third gate electrode in the plurality of trenches; removing conductive material from the first and second gate trenches in regions adjacent the side walls and peripheral regions of the base and exposing the gate insulating layer on the side walls and the peripheral regions of the base and forming a first gate electrode having a pre-determined length from the conductive material in the first gate trench and a second gate electrode having a pre-determined length from the conductive material in the second gate trench; in the second predefined area, implanting dopants of the second conductivity type into the side walls and the peripheral regions of the base of the second gate trench;
in the first predefined area, implanting dopants of the first conductivity type into the side walls and peripheral regions of the base of the first gate trench; and
forming insulating material in the first and second gate trenches and on the third gate electrodes in the plurality of trenches.

14 . The method of claim 13 , further comprising:
implanting dopants of the second conductivity type into the first surface of the semiconductor substrate to form a body region of the power FET; implanting dopants of the first conductivity type into the first surface of the semiconductor substrate and into the well of the second conductivity type in the first predefined region to form source and drain regions of the first lateral FET and a source region on the body region for the vertical power FET; implanting dopants of the second conductivity type into the first surface of the semiconductor in the second predefined r

Assignees

• Infineon Technologies Austria Ag

Inventors

• He Honghai
• Haase Robert
• Naik Harsh
• Henson Timothy
• Mirchandani Ashita

Classifications

• H10P30/21

  of electrically active species · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10D84/0172

  Manufacturing their gate conductors · CPC title

• H10D84/038

  using silicon technology, e.g. SiGe · CPC title

• H10D84/017

  Manufacturing their source or drain regions, e.g. silicided source or drain regions · CPC title