Display device

Patent metadata

Field	Value
Publication number	US-12570895-B2
Application number	US-202418768915-A
Country	US
Kind code	B2
Filing date	Jul 10, 2024
Priority date	Nov 8, 2017
Publication date	Mar 10, 2026
Grant date	Mar 10, 2026

Abstract

Provided is a display device containing quantum dots. A display device includes a display area. The display area has a light emitting device in which a first electrode, a layer between the first electrode and an emitting layer, the emitting layer, a layer between the emitting layer and a second electrode, and the second electrode are stacked in this order on a substrate. The emitting layer is formed of an inorganic layer containing quantum dots, and the light emitting device is a top emission device. A thin film transistor connected to the light emitting device is preferably an n-ch TFT.

First claim

What is claimed is:

1 . A display device, comprising:
a display area, wherein the display area includes a light emitting device in which a first electrode, a first layer between the first electrode and an emitting layer, the emitting layer, a second layer between the emitting layer and a second electrode, and the second electrode are stacked in this order on a substrate, the emitting layer is formed of an inorganic layer containing quantum dots, and the light emitting device is a top emission device, a thin film transistor is connected to the light emitting device, and the thin film transistor is an n-ch TFT, an oxide semiconductor of the thin film transistor is an In—Ga—Zn—O-based semiconductor, a film thickness of the inorganic layer containing the quantum dots is in a range from 25 nm to 37 nm, one of the first electrode and the second electrode is an anode and an other of the first electrode and the second electrode is a cathode, and a layer between the anode and the emitting layer comprises a layer formed of nanoparticles of NiO.

2 . The display device according to claim 1 , wherein
the display device comprises a structure in which the light emitting device and the thin film transistor are interposed between a pair of substrates, and a sealing resin is provided between the pair of substrates so that the pair of substrates are connected to each other via the sealing resin.

3 . The display device according to claim 1 , wherein the display device is flexible.

4 . The display device according to claim 1 , wherein the quantum dots include a structure in which a surface of a core is not covered by a shell.

5 . The display device according to claim 1 , wherein at least one of the first layer between the first electrode and the emitting layer, the emitting layer, and the second layer between the emitting layer and the second electrode is formed by an inkjet process.

6 . The display device according to claim 1 , wherein the first layer between the first electrode and the emitting layer, and the emitting layer are formed by coating; and the second layer between the emitting layer and the second electrode is formed by vapor deposition or coating.

7 . The display device according to claim 1 , wherein the quantum dots have a core-shell structure with a shell thickness from 1.2 nm to 3.1 nm.

8 . The display device according to claim 1 , wherein
the emitting layer is a quantum dot layer formed by coating quantum dots.

9 . The display device according to claim 1 , wherein a layer between the cathode and the emitting layer includes a layer formed of ZnO x (Li), wherein x is in a range of 0.8 to 1.2.

10 . The display device according to claim 1 , wherein the quantum dots do not contain Cd and are formed of ZnS, ZnSe, ZnSeS, ZnTe, ZnTeS, InP, (Zn)AgInS 2 , or (Zn)CuInS 2 .

11 . The display device according to claim 1 , wherein the display device is adjusted to not emit light having a wavelength shorter than 450 nm.

12 . The display device according to claim 1 , wherein the emitting layer, the layer between the anode and the emitting layer, and a layer between the cathode and the emitting layer are each formed of an inorganic layer containing nanoparticles.

13 . The display device according to claim 1 , wherein the display device comprises a lighting display device having color mixing properties equivalent to sunlight, or a lighting display device suitable for a plant cultivation factory.

Assignees

• Toppan Inc

Inventors

• Miyanaga Akiharu
• Ito Tetsuji
• Watanabe Mayuko

Classifications

• H10K59/12 Primary

  Active-matrix OLED [AMOLED] displays · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D62/80

  characterised by the materials · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title