Semiconductive polyolefin composition comprising carbonaceous structures, power cable comprising the same and use therof
US-2023174740-A1 · Jun 8, 2023 · US
US12570843B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12570843-B2 |
| Application number | US-202318862177-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 2, 2023 |
| Priority date | May 3, 2022 |
| Publication date | Mar 10, 2026 |
| Grant date | Mar 10, 2026 |
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The present invention relates to a semiconducting compound composition and a method of preparing the same. More particularly, the present invention relates to a semiconducting compound composition containing: a base resin obtained by mixing two types of ethylene butyl acrylate resins having different melt indices; and carbon black, wherein a volume of the carbon black in the semiconducting compound composition is 60 vol % or more of the total composition volume, and a method of preparing the same.
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The invention claimed is: 1 . A semiconducting compound composition comprising: a base resin obtained by mixing two types of ethylene butyl acrylate resins having different melt indices, the two types of ethylene butyl acrylate resins being a first ethylene butyl acrylate resin and a second ethylene butyl acrylate resin; and carbon black, wherein in the base resin, the first ethylene butyl acrylate resin is an ethylene butyl acrylate resin having a content of a structural unit derived from a butyl acrylate monomer of 15 to 18 mol % and having MI 1 of 5 to 10 g/10 min, the second ethylene butyl acrylate resin is an ethylene butyl acrylate resin having a content of a structural unit derived from a butyl acrylate monomer of 19 to 22 mol % and having MI 2 of 17 to 22 g/10 min, and wherein a content of the carbon black satisfies the following Expression 1: ( M 1 / d 1 ) ( M 1 / d 1 + M 2 / d 2 ) × 100 ≥ 60 % [ Expression 1 ] wherein M 1 is a weight of the carbon black, M 2 is a weight of the base resin, d 1 is a specific gravity of the carbon black, and d 2 is a specific gravity of the base resin. 2 . The semiconducting compound composition of claim 1 , wherein the melt indices satisfy the following Expressions 2 and 3: 1 ≤ M I 1 ≤ 10 [ Expression 2 ] 11 ≤ M I 2 ≤ 3 0 [ Expression 3 ] wherein MI 1 is a melt index of the first ethylene butyl acrylate resin, MI 2 is a melt index of the second ethylene butyl acrylate resin, the melt index is measured under conditions of 125° C. and 2.16 kg according to the ASTM D1238 measurement method, and a unit of the melt index is g/10 min. 3 . The semiconducting compound composition of claim 2 , wherein MI 1 of the first ethylene butyl acrylate resin is 5 to 10 g/10 min, and MI 2 of the second ethylene butyl acrylate resin is 15 to 25 g/10 min. 4 . The semiconducting compound composition of claim 2 , wherein MI 1 and MI 2 of the base resin satisfy the following Expression 4: 1 0 ≤ M I 2 - M I 1 ≤ 2 0 [ Expression 4 ] wherein MI 1 is the melt index (g/10 min) of the first ethylene butyl acrylate resin measured under conditions of 125° C. and 2.16 kg according to the ASTM D1238 measurement method, and MI 2 is the melt index (g/10 min) of the second ethylene butyl acrylate resin measured by the same measurement method as described above. 5 . The semiconducting compound composition of claim 1 , wherein the carbon black is contained in an amount of 30 to 100 parts by weight with respect to 100 parts by weight of the base resin. 6 . The semiconducting compound composition of claim 1 , further comprising an antioxidant and a crosslinking agent. 7 . The semiconducting compound composition of claim 6 , wherein the carbon black, the antioxidant, and the crosslinking agent are contained in amounts of 30 to 100 parts by weight, 0.01 to 5 parts by weight, and 0.1 to 10 parts by weight, respectively, with respect to 100 parts by weigh
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