Solid-state image sensor and imaging system

Patent metadata

Field	Value
Publication number	US-12568698-B2
Application number	US-202217935336-A
Country	US
Kind code	B2
Filing date	Sep 26, 2022
Priority date	Mar 25, 2020
Publication date	Mar 3, 2026
Grant date	Mar 3, 2026

Abstract

A solid-state image sensor includes a first semiconductor, and a second semiconductor having a composition different from that of the first composition and electrically connected to the first semiconductor. The first semiconductor includes a photodiode that converts light incident on the photodiode into charge carriers, first carrier storages that store the charge carriers, and a transfer gate that controls transfer the charge carriers to a selected one of the first carrier storages. The second semiconductor includes second carrier storages and a potential detection node. The second carrier storages each store charge carriers based on the charge carriers stored in a corresponding one of the first carrier storages. The potential detection node detects the electric potential of each of the second carrier storages. The solid-state image sensor further includes a reset transistor that resets the electric potential of each of the first carrier storages to a predetermined electric potential.

First claim

What is claimed is:

1 . A solid-state image sensor, comprising:
a first semiconductor having a first composition and including
a photodiode configured to convert light incident on the photodiode into charge carriers,
a plurality of first carrier storages configured to store the charge carriers, and
a transfer controller configured to control transfer of the charge carriers to a selected one of the first carrier storages, the transfer controller being positioned between the photodiode and the selected one of the first carrier storages;
a second semiconductor having a second composition different from the first composition, the second semiconductor being electrically connected to the first semiconductor, the second semiconductor including
a plurality of second carrier storages corresponding to the respective first carrier storages, which are included in the first semiconductor having the first composition, each of the second carrier storages being configured to store charge carriers based on the charge carriers stored in a corresponding one of the first carrier storages, which is included in the first semiconductor having the first composition, and
a potential detector configured to detect an electric potential of each of the second carrier storages; and
a resetter configured to reset an electric potential of each of the first carrier storages, which is included in the first semiconductor having the first composition, to a predetermined electric potential.

2 . The solid-state image sensor according to claim 1 , wherein the resetter, which is configured to reset the electric potential of each of the first carrier storages, which is included in the first semiconductor having the first composition, to the predetermined electric potential, is mounted to the first semiconductor.

3 . An imaging system, comprising:
a light source unit configured to emit light having a predetermined wavelength profile; and the solid-state image sensor of claim 2 .

4 . The imaging system according to claim 3 , wherein the light source unit is configured to emit near-infrared light or short-wave infrared light.

5 . The solid-state image sensor according to claim 1 , wherein the photodiode comprises germanium as a main element thereof.

6 . An imaging system, comprising:
a light source unit configured to emit light having a predetermined wavelength profile; and the solid-state image sensor of claim 5 .

7 . The imaging system according to claim 6 , wherein the light source unit is configured to emit near-infrared light or short-wave infrared light.

8 . An imaging system, comprising:
a light source unit configured to emit light having a predetermined wavelength profile; and the solid-state image sensor of claim 1 .

9 . The imaging system according to claim 8 , wherein the light source unit is configured to emit near-infrared light or short-wave infrared light.

Assignees

• Toppan Inc

Inventors

• Goto Hiroshige

Classifications

• H04N25/62

  Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels · CPC title

• H10F39/8037

  the integrated elements comprising a transistor · CPC title

• H04N25/60

  Noise processing, e.g. detecting, correcting, reducing or removing noise · CPC title

• H04N25/771

  comprising storage means other than floating diffusion · CPC title

• H10F39/184 Primary

  Infrared image sensors · CPC title