Optical module having multiple laser diode devices and a support member

Patent metadata

Field	Value
Publication number	US-12566296-B2
Application number	US-202218078575-A
Country	US
Kind code	B2
Filing date	Dec 9, 2022
Priority date	Jan 24, 2011
Publication date	Mar 3, 2026
Grant date	Mar 3, 2026

Abstract

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

First claim

What is claimed is:

1 . A system comprising:
a package having an optical module apparatus configured for use with an application selected from white lighting applications, multi-colored lighting applications, flat panel applications, medical applications, metrology applications, beam projector applications, display applications, high intensity lamp applications, spectroscopy applications, entertainment applications, theater applications, music applications, concert applications, analysis fraud detection applications, authenticating applications, tool applications, water treatment applications, laser dazzler applications, targeting applications, communications applications, transformation applications, transportation applications, leveling applications, curing applications, chemical treatment applications, heating applications, cutting applications, ablating applications, pumping applications, optical device applications, optoelectronic device applications, source lighting applications, power scaling applications, spectral broadening applications, or multicolor monolithic integration applications, the optical module apparatus comprising:
a plurality of ceramic support members;
a plurality of laser diodes each coupled to one of the plurality of ceramic support members to form a plurality of laser diode chips, each of the plurality of laser diode chips having a single laser diode configured to emit a laser beam; wherein at least one of the plurality of laser diode chips comprises a gallium and nitrogen containing laser diode device configured to emit a laser beam characterized by emission selected from violet emission with a wavelength ranging from 395 nm to 425 nm, blue emission with a wavelength ranging from 415 nm to 485 nm, or green emission with a wavelength ranging from 500 nm to 560 nm;
one or more optical devices configured to receive laser beams from the plurality of laser diode chips, and to combine or collimate the laser beams to provide an output beam characterized by a selected wavelength range, a selected spectral width, a selected power, and a selected spatial configuration; and
a power source electrically coupled to the plurality of laser diode chips;
wherein:
the plurality of ceramic support members are configured to transport thermal energy from the plurality of laser diode chips to a heat sink;
the one or more optical devices comprise free space optics configured to create one or more free space optical beams;
a thermal path from each of the plurality of laser diode chips to the heat sink is characterized by a thermal impedance; and
the optical module apparatus is characterized by an optical output power of at least 5 W.

2 . The system of claim 1 , wherein at least one of the plurality of laser diode chips comprises an AlInGaP laser diode device configured to emit a laser beam characterized by red emission with a wavelength ranging from 625 nm to 665 nm; or
wherein at least one of the plurality of laser diode chips comprises a GaAs or AlGaAsP laser diode device configured to emit a laser beam characterized by an infrared emission, or a combination thereof.

3 . The system of claim 1 , further comprising an electrical input interface configured to couple electrical input power to the plurality of laser diode chips; and wherein the electrical input interface is configured to couple radio frequency electrical inputs to the laser diode chips or wherein the electrical input interface is configured to couple logic signals to the laser diode chips.

4 . The system of claim 1 , wherein the plurality of laser diode chips are operable in an environment comprising at least 150,000 ppm oxygen gas; wherein each of the plurality of laser diode chips is substantially free from efficiency degradation over a time period from the oxygen gas.

5 . The system of claim 1 , further comprising a combiner configured to provide the output beam characterized by a selected spatial pattern having a maximum width and a minimum width.

6 . The system of claim 1 , further comprising a plurality of submount members characterized by a coefficient of thermal expansion (CTE) each coupled to one of the plurality of ceramic support members and the heat sink, wherein the plurality of submount members couple the plurality of laser diode chips to the plurality of ceramic support members, and wherein each of the plurality of submount members comprises a material selected from aluminum nitride, silicon carbide, BeO, diamond, composite diamond, and a combination of any of the foregoing.

7 . The system of claim 1 , further comprising a submount attached to the plurality of ceramic support members, the submount being characterized by a thermal conductivity of at least 200 W/(mk); and wherein each of the plurality of laser diode chips are thermally coupled directly to one of the plurality of ceramic support members.

8 . The system of claim 1 , wherein the one or more optical devices comprise an optical fiber, wherein the output beam is coupled into the optical fiber.

9 . The system of claim 1 , wherein the plurality of laser diode chips include N laser diode chips and N ranges from 3 to 50.

10 . The system of claim 1 , wherein the output beam is characterized by an optical power of 5 W and greater, 10 W and greater, 50 W and greater, 100 W and greater, or 200 W and greater.

11 . A system comprising:
a package having an optical module apparatus configured for use with an application, the optical module apparatus comprising: a plurality of ceramic support members; a plurality of laser diodes each coupled to one of the plurality of ceramic support members to form a plurality of laser diode chips; each of the plurality of laser diode chips having a single laser diode configured to emit a laser beam; wherein at least one of the laser diode chips comprises gallium and nitrogen and is configured to emit a laser beam characterized by emission selected from violet emission with a wavelength ranging from 395 nm to 425 nm, blue emission with a wavelength ranging from 415 nm to 485 nm, green emission with a wavelength ranging from 500 nm to 560 nm, and a combination thereof; one or more optical devices configured to receive laser beams from the plurality of laser diode chips, and to combine and/or collimate the laser beams; the laser beams characterized by a selected wavelength range, a selected spectral width, a selected power, and a selected spatial configuration; wherein the one or more optical devices comprise free space optics configured to create one or more free space optical beams; an optical fiber configured to receive the laser beams from the plurality of laser diode chips by optical coupling; and to provide an output beam characterized by a selected wavelength range, a selected spectral width, a selected power, and a selected spatial configuration; wherein:
the plurality of ceramic support members are configured to transport thermal energy from the plurality of laser diode chips to a heat sink; and
the output beam is characterized by an optical output power of at least 5 W.

12 . The system of claim 11 , wherein the free space optics provide optical coupling of the laser beams to the optical fiber and are selected from one or more of a fast axis collimating (FAC) lens or a slow axis collimating (SAC) lens, and/or wherein the optical fiber is spaced from the plurality of laser diode chips by between about 0.2 mm to about 10 mm.

13 . The system of claim 11 , wherein the output beam is characterized by an optical power of 5 W and greater, 10 W and greater, 50 W and greater, 100 W and greater, or 200 W and greater.

14 . The system of

Assignees

• Kyocera Sld Laser Inc

Inventors

• Goutain Eric
• Raring James W
• Rudy Paul
• Huang Hua

Classifications

• H01S5/3235

  emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers · CPC title

• G02B6/26

  Optical coupling means (G02B6/36, G02B6/42 take precedence) · CPC title

• F21K9/62

  using mixing chambers, e.g. housings with reflective walls · CPC title

• H01S5/4025

  Array arrangements, e.g. constituted by discrete laser diodes or laser bar (H01S5/42 takes precedence) · CPC title

• H01S5/32341

  blue laser based on GaN or GaP · CPC title