Semiconductor device

Patent metadata

Field	Value
Publication number	US-12565418-B2
Application number	US-202218065978-A
Country	US
Kind code	B2
Filing date	Dec 14, 2022
Priority date	Feb 1, 2022
Publication date	Mar 3, 2026
Grant date	Mar 3, 2026

Abstract

A semiconductor device for use in a sensor device has a deformable membrane for the measurement of an acceleration, a vibration, or a pressure. The semiconductor device includes a deformable membrane having a membrane border; a structure holding the deformable membrane in correspondence of the membrane border; at least one electric contact to obtain an electric signal indicative of deformation of the deformable membrane; and mass elements suspended from the membrane.

First claim

What is claimed is:

1 . A semiconductor device comprising:
a deformable membrane having a membrane border; a structure holding the deformable membrane in correspondence of the membrane border; at least one electric contact configured to obtain an electric signal indicative of a deformation of the deformable membrane; a plurality of mass elements suspended from the deformable membrane; and a capacitor with a variable capacitance, wherein the capacitor has a first electrode and a second electrode, wherein the first electrode includes the deformable membrane, wherein the capacitance is variable based on a membrane deformation conditioned by a movement of the plurality of mass elements, and wherein the electric signal is conditioned by the capacitance.

2 . The semiconductor device of claim 1 , wherein the mass elements are each subjected to a movement so that the movements generate one translatorily oscillating mode.

3 . The semiconductor device of claim 1 , wherein a center of mass of the plurality of mass elements is positioned in a centered position of the deformable membrane.

4 . The semiconductor device of claim 1 , wherein the deformable membrane is a piezoelectric membrane electrically connected to the at least one electric contact, and wherein the deformation of the deformable membrane, conditioned by the movement of the plurality of mass elements, causes a variation of the electric signal.

5 . The semiconductor device of claim 1 , wherein the deformable membrane is subjectable to a flow of an electric current, and wherein the electric signal is conditioned by the deformation of the deformable membrane conditioned by the movement of the plurality of mass elements.

6 . The semiconductor device of claim 1 , wherein the deformation of the deformable membrane, at a first frequency, is conditioned by a compensation between tilting modes singularly affecting the mass elements generating a translatorily oscillating mode, and wherein the deformation of the deformable membrane is conditioned, at a second frequency different from the first frequency, by a piston mode in which the mass elements oscillate prevalently translatorily.

7 . The semiconductor device of claim 1 , wherein each mass element of the plurality of mass elements has a shape elongated along a protrusion direction which is transversal to a planar cross section of the mass element, and wherein an elongation of each mass element along the protrusion direction is larger than the elongation(s) of each mass element in planar directions.

8 . The semiconductor device of claim 1 , wherein the plurality of mass elements includes at least one off-centered mass element that is not located in a center of the deformable membrane.

9 . The semiconductor device of claim 8 , wherein the membrane border has a border shape, wherein at least one downscaled version of the border shape encounters, with a tolerance of 30%, the at least one off-centered mass element.

10 . The semiconductor device of claim 8 , wherein positions equidistant from the membrane border and a membrane center are occupied by the at least one off-centered mass element, within a tolerance of 30%.

11 . The semiconductor device of claim 8 , wherein the membrane border has a border shape, and the at least one off-centered mass element is placed in such a way that a plurality of positions, which within a tolerance of 30% are symmetrical with respect to at least one symmetry axis extending along a planar extension of the deformable membrane and intersecting the border shape in at least two intersection positions, are occupied by the at least one off-centered mass element.

12 . The semiconductor device of claim 1 , wherein no mass element is positioned at a centered position of the deformable membrane.

13 . A sensor device comprising the semiconductor device of claim 1 , further comprising:
analog-to-digital circuitry to convert the electric signal indicative of the deformation of the deformable membrane into a digital version; and at least one digital measurer to obtain, from the digital version of the electric signal, a measurement of at least one pressure, vibration, or acceleration.

14 . A method for manufacturing a semiconductor device, the method including:
making a deformable membrane and a plurality of mass elements including at least two mass elements integral with, or fixed or mechanically connected to, the deformable membrane, in such a way that the deformable membrane has a membrane border held by a structure; making at least one electric contact for connection to the deformable membrane so that the electrical contact is able to receive an electric signal indicative of a deformation of the deformable membrane conditioned by a movement of the at least two mass elements; and forming a capacitor with a variable capacitance, wherein the capacitor has a first electrode and a second electrode, wherein the first electrode includes the deformable membrane, wherein the capacitance is variable based on a membrane deformation conditioned by the movement of the plurality of mass elements so that the electric signal is conditioned by the capacitance.

15 . A semiconductor device comprising:
a single deformable membrane having a membrane border; a structure holding the deformable membrane in correspondence of the membrane border; at least one electric contact configured to obtain an electric signal indicative of a deformation of the deformable membrane; a plurality of mass elements suspended from the deformable membrane; and a capacitor with a variable capacitance, wherein the capacitor has a first electrode and a second electrode, wherein the first electrode includes the deformable membrane, wherein the capacitance is variable based on a membrane deformation, and wherein the electric signal is conditioned by the capacitance.

16 . The semiconductor device of claim 15 , wherein the plurality of mass elements comprises exactly four mass elements.

17 . The semiconductor device of claim 15 , wherein the plurality of mass elements comprises exactly three mass elements.

18 . The semiconductor device of claim 15 , wherein no mass element is positioned at a centered position of the deformable membrane.

19 . The semiconductor device of claim 15 , wherein the plurality of mass elements is integral with the deformable membrane.

20 . The semiconductor device of claim 15 , wherein the plurality of mass elements is fixed with the deformable membrane via an adhesive or a bond.

Assignees

• Infineon Technologies Ag

Inventors

• Basavanna Abhiraj
• Goswami Somu
• Bogner Andreas

Classifications

• B81B2203/0127

  Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function · CPC title

• B81B2201/0285

  Vibration sensors · CPC title

• B81B2201/0264

  Pressure sensors · CPC title

• B81B2201/0235

  Accelerometers · CPC title

• B81B2201/0221

  Variable capacitors · CPC title