Processing method for substrate

Patent metadata

Field	Value
Publication number	US-12563801-B2
Application number	US-202318485974-A
Country	US
Kind code	B2
Filing date	Oct 12, 2023
Priority date	Oct 16, 2019
Publication date	Feb 24, 2026
Grant date	Feb 24, 2026

Abstract

The present invention relates to a substrate processing method, and more particularly, to a processing method for substrate for removing impurities from inside a thin film of a substrate and improving characteristics of the thin film.

First claim

What is claimed is:

1 . A processing method for substrate comprising:
a pressure changing step for raising pressure inside a chamber for processing a substrate formed with a thin film to a first pressure greater than the atmospheric pressure and lowering the pressure inside the chamber to a second pressure smaller than the atmospheric pressure at a temperature that induces removal of impurities from the substrate surface, thereby heat treating the substrate; wherein the thin film is a metal film including a metal element.

2 . The processing method for substrate of claim 1 , wherein the thin film is any one of metallic oxide film, metallic nitride film, and composition film of metallic oxide and metallic nitride.

3 . The processing method for substrate of claim 1 , wherein the thin film comprises at least one of titanium (Ti), tungsten (W), tantalum (Ta) and molybdenum (Mo).

4 . The processing method for substrate of claim 1 , wherein the thin film comprises metal element, and is a film composed of a single element, a film composed of two or more elements, or a film in which thin films of mutually different types are compositely formed.

5 . The processing method for substrate of claim 1 , wherein the thin film is a thin film of titanium nitride (TIN).

6 . The processing method for substrate of claim 1 , wherein the thin film is a conductive film.

7 . The processing method for substrate of claim 6 , wherein the thin film forms a portion of a gate electrode of a transistor.

8 . The processing method for substrate of claim 1 , wherein in the pressure changing step, the pressure inside the chamber performed by supplying pressurizing gas into the chamber.

9 . The processing method for substrate of claim 8 , wherein in the pressurizing gas comprises one or more elements of hydrogen (H), oxygen (O), nitrogen (N), chlorine (CI), and fluorine (F).

10 . The processing method for substrate of claim 8 , wherein in the pressurizing gas comprises H 2 .

11 . The processing method for substrate of claim 1 , wherein the thin film is formed by using a gas including chlorine (CI), and in the pressure changing step, pressurizing gas comprising hydrogen (H) is supplied.

12 . The processing method for substrate of claim 1 , wherein the pressure changing step comprises,
a pressurizing step for raising pressure inside the chamber to the first pressure; a first depressurizing step for lowering, after the pressurizing step, the pressure inside the chamber from the first pressure to a third pressure between the first pressure and the second pressure; and a second depressurizing step for lowering, after the first depressurizing step, the pressure inside the chamber to the second pressure.

13 . The processing method for substrate of claim 12 , wherein the pressurizing step, the first depressurizing step and the second depressurizing step are repeatedly performed a plurality of times.

14 . The processing method for substrate of claim 12 , wherein the pressurizing step comprises:
a pressure raising step for raising the pressure inside the chamber to the first pressure; and a high-pressure maintaining step for maintaining, after the pressure raising step, the pressure inside the chamber at the first pressure for a predetermined time.

15 . The processing method for substrate of claim 12 , wherein:
in the pressurizing step, the pressure inside the chamber is raised to the first pressure, whereby a pressurizing gas is caused to combined with impurities of the substrate to form a byproduct; in the first depressurizing step, the pressure inside the chamber is lowered from the first pressure to the third pressure, whereby the byproduct is moved to a surface of the substrate or out of the substrate; and in the second depressurizing step, the pressure inside the chamber is lowered from the third pressure to the second pressure smaller than the atmospheric pressure, whereby the byproduct present in an inner space of the chamber is discharged out of the chamber.

16 . The processing method for substrate of claim 12 , wherein the third pressure is the atmospheric pressure.

17 . The processing method for substrate of claim 1 , wherein the thin film is formed on the substrate inside the chamber in which the pressure changing step is performed.

18 . The processing method for substrate of claim 1 , wherein the thin film is formed on the substrate inside a separate chamber via a transfer chamber connected to the chamber in which the pressure changing step is performed.

19 . The processing method for substrate of claim 1 , wherein the thin film is formed on the substrate inside a chamber of a separate substrate processing apparatus from the chamber of a substrate processing apparatus in which the pressure changing step is performed.

20 . The processing method for substrate of claim 12 , wherein temperature of the chamber performing the pressurizing step is above 400° C. and below 800° C.

Assignees

• Wonik Ips Co Ltd

Inventors

• Jang Won Jun
• Park Kyung
• Kim Young Jun

Classifications

• H10D64/01316

  the conductor comprising a layer of elemental metal contacting the insulator, e.g. Ta, W, Mo or Al · CPC title

• H10D64/667

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers (having lateral variation H10D64/671) · CPC title

• H10D64/665

  the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum (having lateral variation H10D64/671) · CPC title

• H10D64/513

  within recesses in the substrate, e.g. trench gates, groove gates or buried gates · CPC title

• H10D64/01318 Primary

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314) · CPC title