Miniaturized long-term evolution antenna

US12562490B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12562490-B2
Application numberUS-202418412815-A
CountryUS
Kind codeB2
Filing dateJan 15, 2024
Priority dateJan 19, 2023
Publication dateFeb 24, 2026
Grant dateFeb 24, 2026

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A miniaturized long-term evolution (LTE) antenna. In one embodiment, the antenna includes a dielectric substrate comprising a first surface and a second opposing surface; a first metallization layer disposed on the first surface of the dielectric substrate, the first metallization layer comprising a first metallization, a second metallization, a third metallization, and a fourth metallization; and a second metallization layer disposed on the second opposing surface of the dielectric substrate, the second metallization layer comprising a fifth metallization, a sixth metallization, a seventh metallization, an eighth metallization, and a ninth metallization. The antenna includes a plurality of through hole vias that: connect the first metallization with the fifth metallization; connect the second metallization with both the sixth metallization and the seventh metallization; and connect the fourth metallization with both the fifth metallization and the sixth metallization. System level implementations are also disclosed.

First claim

Opening claim text (preview).

What is claimed is: 1 . An antenna for use in long-term evolution (LTE) frequency bands, comprising: a dielectric substrate comprising a first surface and a second opposing surface; a first metallization layer disposed on the first surface of the dielectric substrate, the first metallization layer comprising a first discrete metallization, a second discrete metallization, a third discrete metallization, and a fourth discrete metallization; and a second metallization layer disposed on the second opposing surface of the dielectric substrate, the second metallization layer comprising a fifth discrete metallization, a sixth discrete metallization, a seventh discrete metallization, an eighth discrete metallization, and a ninth discrete metallization; wherein the antenna comprises a plurality of through hole vias that: connect the first discrete metallization with the fifth discrete metallization; connect the second discrete metallization with both the sixth discrete metallization and the seventh discrete metallization; and connect the fourth discrete metallization with both the fifth discrete metallization and the sixth discrete metallization; wherein the seventh discrete metallization, the eighth discrete metallization, and the ninth discrete metallization comprise external terminations for a system level printed circuit board; wherein the first discrete metallization comprises a generally rectangular shape; and wherein the second discrete metallization comprises a generally L-shaped metallization, the generally L-shaped metallization comprising two of the plurality of through hole vias, the two of the plurality of through hole vias being positioned at opposing ends of the generally L-shaped metallization. 2 . The antenna of claim 1 , wherein the second discrete metallization comprises both a choke point and a truncation feature. 3 . The antenna of claim 2 , wherein the truncation feature is positioned generally between the fifth discrete metallization and the sixth discrete metallization. 4 . An antenna for use in long-term evolution (LTE) frequency bands, comprising: a dielectric substrate comprising a first surface and a second opposing surface; a first metallization layer disposed on the first surface of the dielectric substrate, the first metallization layer comprising a first discrete metallization, a second discrete metallization, a third discrete metallization, and a fourth discrete metallization; and a second metallization layer disposed on the second opposing surface of the dielectric substrate, the second metallization layer comprising a fifth discrete metallization, a sixth discrete metallization, a seventh discrete metallization, an eighth discrete metallization, and a ninth discrete metallization; wherein the antenna comprises a plurality of through hole vias that: connect the first discrete metallization with the fifth discrete metallization; connect the second discrete metallization with both the sixth discrete metallization and the seventh discrete metallization; and connect the fourth discrete metallization with both the fifth discrete metallization and the sixth discrete metallization; wherein the seventh discrete metallization, the eighth discrete metallization, and the ninth discrete metallization comprise external terminations for a system level printed circuit board; wherein the first discrete metallization comprises a generally rectangular shape; and wherein the fourth discrete metallization comprises a generally U-shaped metallization, the generally U-shaped metallization comprising an additional two of the plurality of through hole vias, the additional two of the plurality through hole vias being positioned at opposing ends of the generally U-shaped metallization. 5 . The antenna of claim 4 , wherein the fourth discrete metallization further comprises an angled contour as well as a staircasing feature. 6 . The antenna of claim 5 , wherein less than an entire portion of the angled contour overlaps the sixth discrete metallization. 7 . The antenna of claim 6 , wherein the staircasing feature is positioned generally between the eighth discrete metallization and the ninth discrete metallization. 8 . A system comprising: an antenna for use in long-term evolution (LTE) frequency bands, comprising: a dielectric substrate comprising a first surface and a second opposing surface; a first metallization layer disposed on the first surface of the dielectric substrate, the first metallization layer comprising a first discrete metallization, a second discrete metallization, a third discrete metallization, and a fourth discrete metallization; and a second metallization layer disposed on the second opposing surface of the dielectric substrate, the second metallization layer comprising a fifth discrete metallization, a sixth discrete metallization, a seventh discrete metallization, an eighth discrete metallization, and a ninth discrete metallization; wherein the antenna comprises a plurality of through hole vias that: connect the first discrete metallization with the fifth discrete metallization; connect the second discrete metallization with both the sixth discrete metallization and the seventh discrete metallization; and connect the fourth discrete metallization with both the fifth discrete metallization and the sixth discrete metallization; and a system level printed circuit board upon which the antenna is disposed; wherein the seventh discrete metallization, the eighth discrete metallization, and the ninth discrete metallization comprise external terminations for the system level printed circuit board; wherein the seventh discrete metallization comprises a signal interface to a feed connection located on the system level printed circuit board; and the eighth discrete metallization comprises an interface to matching circuitry located on the system level printed circuit board. 9 . The system of claim 8 , wherein the matching circuitry comprises a switch that enables the antenna to switch between a plurality of operating frequencies for the antenna. 10 . The system of claim 8 , wherein the first discrete metallization comprises a generally rectangular shape. 11 . The system of claim 10 , wherein the second discrete metallization comprises a generally L-shaped metallization, the generally L-shaped metallization comprising two of the plurality of through hole vias, the two of the plurality of through hole vias being positioned at opposing ends of the generally L-shaped metallization. 12 . The system of claim 11 , wherein the fourth discrete metallization comprises a generally U-shaped metallization, the generally U-shaped metallization comprising an additional two of the plurality of through hole vias, the additional two of the plurality through hole vias being positioned at opposing ends of the generally U-shaped metallization. 13 . The system of claim 12 , wherein the fourth discrete metallization further comprises an angled contour as well as a staircasing feature. 14 . The system of claim 13 , wherein less than an entire portion of the angled contour overlaps the sixth discrete metallization. 15 . The system of claim 14 , wherein the staircasing feature is positioned generally between the eighth discrete metallization and the ninth discrete metallization.

Assignees

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Classifications

  • formed by a conductive layer on an insulating support {(patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface  H01Q15/142)} · CPC title

  • H01Q1/243Primary

    with built-in antennas · CPC title

  • H01Q9/42Primary

    with folded element, the folded parts being spaced apart a small fraction of the operating wavelength · CPC title

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What does patent US12562490B2 cover?
A miniaturized long-term evolution (LTE) antenna. In one embodiment, the antenna includes a dielectric substrate comprising a first surface and a second opposing surface; a first metallization layer disposed on the first surface of the dielectric substrate, the first metallization layer comprising a first metallization, a second metallization, a third metallization, and a fourth metallization; …
Who is the assignee on this patent?
Taoglas Group Holdings Ltd
What technology area does this patent fall under?
Primary CPC classification H01Q1/243. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 24 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).