Sintered body, method of fabricating the same, semiconductor fabricating device, and method of fabricating semiconductor fabricating device

Patent metadata

Field	Value
Publication number	US-12559381-B2
Application number	US-202117528682-A
Country	US
Kind code	B2
Filing date	Nov 17, 2021
Priority date	Nov 25, 2020
Publication date	Feb 24, 2026
Grant date	Feb 24, 2026

Abstract

A sintered body, a method of fabricating the sintered body, a semiconductor fabricating device, and a method of fabricating the semiconductor fabricating device, the sintered body including 50 mass % or more of Y 5 O 4 F 7 , wherein the sintered body has a relative density of 97.0% or more and a Vickers hardness of 2.4 GPa or more.

First claim

What is claimed is:

1 . A method of fabricating a sintered body, the method comprising:
molding a molded body including a Y 5 O 4 F 7 powder; forming a composite sintered body by sintering the molded body at a temperature of 1,000° C. or higher under an argon gas atmosphere or a vacuum atmosphere of 10 −3 Pa or less; and selecting a sintered body from the composite sintered body, wherein the selected sintered body includes 50 mass % or more of Y 5 O 4 F 7 , has a relative density of 97.0% or more, and has a Vickers hardness of 2.4 GPa or more; wherein the selected sintered body has a whiteness L* in a Lab color space of an external color of 65 or more.

2 . The method as claimed in claim 1 , wherein molding the molded body includes performing slip casting or uniaxial pressing.

3 . The method as claimed in claim 2 , wherein forming the composite sintered body includes performing pressureless sintering at 1,000° C. to 1,400° C.

4 . The method as claimed in claim 3 , further comprising processing the composite sintered body by performing hot isostatic pressing (HIP) after forming the composite sintered body to form a HIP composite sintered body,
wherein selecting the sintered body includes selecting the sintered body from the HIP composite sintered body.

5 . The method as claimed in claim 4 , wherein a relative density of the composite sintered body before performing the HIP is 90% or more.

6 . The method as claimed in claim 4 , wherein, in the composite sintered body before performing the HIP:
the relative density is 94% or more; and a whiteness L* in a Lab color space of an external color is 75 or more.

7 . The method as claimed in claim 1 , wherein:
molding the molded body includes performing uniaxial pressing; and forming the composite sintered body includes performing a hot press at 1,000° C. to 1,400° C.

8 . The method as claimed in claim 7 , wherein the sintered body has a relative density of 99.0%.

9 . The method as claimed in claim 1 , wherein the sintered body includes 99 mass % or more of Y 5 O 4 F 7 .

10 . The method as claimed in claim 1 , wherein selecting the sintered body from the composite sintered body includes isolating the sintered body from the composite sintered body.

11 . The method as claimed in claim 1 , wherein the molded body further includes an adjuvant.

12 . The method as claimed in claim 11 , wherein the adjuvant includes a lanthanoid oxide, a lanthanoid fluoride, or a lanthanoid oxyfluoride.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Chang Hwan
• Noguchi Takafumi
• Iizuka Toshihiro
• Nagayama Kenichi

Classifications

• B28B3/02

  wherein a ram exerts pressure on the material in a moulding space; Ram heads of special form · CPC title

• C01P2006/62

  L* (lightness axis) · CPC title

• C01P2006/90

  Other properties not specified above · CPC title

• B28B11/243

  Setting, e.g. drying, dehydrating or firing ceramic articles (B28B11/242 takes precedence) · CPC title

• C01P2006/80

  Compositional purity · CPC title