Silicon-based organic electroluminescent display substrate with OLED cathode including conductive scattering substructure, manufacturing method thereof and display panel

Patent metadata

Field	Value
Publication number	US-12557474-B2
Application number	US-202117772623-A
Country	US
Kind code	B2
Filing date	Jun 22, 2021
Priority date	Jun 23, 2020
Publication date	Feb 17, 2026
Grant date	Feb 17, 2026

Abstract

Provided are a silicon-based organic electroluminescent display substrate, a manufacturing method thereof, and a display panel. The display substrate includes: a silicon-based substrate and pixel units thereon. Each of the pixel units includes: a first electrode on a side of the silicon-based substrate; a light emitting layer on a side of the first electrode away from the silicon-based substrate; and a second electrode on a side of the light emitting layer away from the first electrode. The second electrode of each of the pixel units includes at least one composite structure including: a first metal film layer on a side of the light emitting layer away from the first electrode; a conductive scattering sub-structure on a side of the first metal film layer away from the light emitting layer; and a second metal film layer on a side of the conductive scattering sub-structure away from the first metal film layer.

First claim

What is claimed is:

1 . A silicon-based organic electroluminescent display substrate, comprising a silicon-based substrate and a plurality of pixel units on the silicon-based substrate, wherein each of the plurality of pixel units comprises:
a first electrode on a side of the silicon-based substrate; a light emitting layer on a side of the first electrode away from the silicon-based substrate; and a second electrode on a side of the light emitting layer away from the first electrode, wherein the second electrode of at least one of the plurality of pixel units comprises at least one composite structure comprising: a first metal film layer on a side of the light emitting layer away from the first electrode; a conductive scattering sub-structure on a side of the first metal film layer away from the light emitting layer; and a second metal film layer on a side of the conductive scattering sub-structure away from the first metal film layer; wherein the first electrode is a reflective electrode, and the second electrode is a transmissive electrode; the conductive scattering sub-structure comprises a plurality of conductive scattering blocks; the plurality of conductive scattering blocks each have a thickness in a range from 5 nm to 20 nm in a direction perpendicular to the silicon-based substrate; a sum of areas of orthographic projections of the plurality of conductive scattering blocks on the silicon-based substrate is 30% to 70% of an area of an orthographic projection of the first electrode on the silicon-based base; the orthographic projections of the plurality of conductive scattering blocks on the silicon-based substrate are uniformly distributed on the silicon-based substrate, and the orthographic projections of the plurality of conductive scattering blocks on the silicon-based substrate have a same hexagonal or circular shape, and every two adjacent conductive scattering blocks of the plurality of conductive scattering blocks are spaced from each other by a distance to increase light transmission of the second electrode.

2 . The display substrate of claim 1 , wherein the second electrode has a thickness in a range from 12 nm to 20 nm in a direction perpendicular to the silicon-based substrate.

3 . The display substrate of claim 1 , wherein shapes of the orthographic projections of the plurality of conductive scattering blocks on the silicon-based substrate are the same, and are the same as a shape of the orthographic projection of the first electrode on the silicon-based substrate.

4 . The display substrate of claim 3 , wherein a material of the conductive scattering sub-structure has a carrier mobility in a range from 10 −4 cm 2 V −1 s −1 to 10 cm 2 V −1 s −1 , and
an optical energy gap of the material of the conductive scattering sub-structure is greater than 2.5 eV.

5 . The display substrate of claim 4 , wherein the material of the conductive scattering sub-structure comprises an organic semiconductor material, an inorganic semiconductor material, a doped inorganic semiconductor material or a doped organic semiconductor material.

6 . The display substrate of claim 5 , wherein the organic semiconductor material comprises 8-hydroxyquinoline aluminium, bathophenanthroline and 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline.

7 . The display substrate of claim 5 , wherein the inorganic semiconductor material comprises a carbon material, and
the carbon material comprises at least one of graphene, a nanocarbon material, a carbon fiber, and a carbonic material.

8 . The display substrate of claim 5 , wherein a dopant material in the doped inorganic semiconductor material or the doped organic semiconductor material comprises at least one of lithium fluoride, 8-hydroxyquinoline lithium, lithium, magnesium phosphide, magnesium fluoride, and aluminum oxide.

9 . The display substrate of claim 1 , wherein a material of the first and second metal film layers comprises at least one of a magnesium silver alloy and a silver alloy.

10 . A display panel, comprising the display substrate of claim 1 and a driving circuit for driving the display substrate.

11 . A method for manufacturing the silicon-based organic electroluminescent display substrate of claim 1 , comprising:
providing a silicon-based substrate; forming a first electrode on the silicon-based substrate; forming a light emitting layer on a side of the first electrode away from the silicon-based substrate, and forming a second electrode on a side of the light emitting layer away from the first electrode, such that the second electrode comprises at least one composite structure comprising: a first metal film layer on a side of the light emitting layer away from the first electrode; a conductive scattering sub-structure on a side of the first metal film layer away from the light emitting layer; and a second metal film layer on a side of the conductive scattering sub-structure away from the first metal film layer.

12 . The method of claim 11 , wherein forming the second electrode comprises:
forming the first metal film layer on the light emitting layer; forming a conductive scattering film layer on the first metal film layer; and forming the second metal film layer on the conductive scattering film layer.

13 . The method of claim 11 , wherein forming the second electrode comprises:
forming the first metal film layer on the light emitting layer; forming a conductive scattering layer on the first metal film layer, and patterning the conductive scattering layer to form a plurality of island-shaped conductive scattering blocks; and forming the second metal film layer on the plurality of island-shaped conductive scattering blocks to cover the plurality of conductive scattering blocks.

Assignees

• Yunnan Invensight Optoelectronics Technology Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Duan Dongdong
• Chen Xiaochuan
• Wang Hui
• Yang Shengji
• Lu Pengcheng
• Shen Xiaobin
• Wang Yu
• Yuan Xiong
• Tong Hui
• Huang Kuanta

Classifications

• H10K59/877

  comprising scattering means · CPC title

• H10K59/876

  comprising a resonant cavity structure, e.g. Bragg reflector pair · CPC title

• H10K59/80524

  Transparent cathodes, e.g. comprising thin metal layers · CPC title

• H10K59/80518

  Reflective anodes, e.g. ITO combined with thick metallic layers · CPC title

• H10K59/122 Primary

  Pixel-defining structures or layers, e.g. banks · CPC title