Bio-inspired imaging device with in-sensor visual adaptation

Patent metadata

Field	Value
Publication number	US-12557410-B2
Application number	US-202217649070-A
Country	US
Kind code	B2
Filing date	Jan 27, 2022
Priority date	Jan 27, 2022
Publication date	Feb 17, 2026
Grant date	Feb 17, 2026

Abstract

A bio-inspired imaging device mimicking visual adaptation of human vision provides a large dynamic range in imaging an image. The device employs a neuromorphic vision sensor realized with phototransistors each being a field-effect transistor, a channel layer of which is an atomically-thin layer of two-dimensional semiconductor material. The channel layer is intentionally formed with defects trap states for trapping a portion of charge carriers generated by a light beam incident on the phototransistor such that intensity information of the light beam is memorized. A gate-source voltage directs the defects trap states to de-trap the trapped portion of charge carriers or to further trap an additional portion of charge carriers, allowing the phototransistor to exhibit a time-dependent excitation or inhibition effect on drain current to thereby enable the imaging sensor to mimic scotopic or photopic adaptation in imaging the image.

First claim

What is claimed is:

1 . A bio-inspired imaging device for imaging an image with in-sensor visual adaptation comprising:
an imaging sensor comprising a plurality of phototransistors, an individual phototransistor for converting a light beam of the image to an electrical signal being a field-effect transistor (FET) comprising:
a source, a drain and a gate; and
a channel layer connecting the source and the drain, the channel layer being an atomically-thin layer composed of a two-dimensional (2D) semiconductor material for generating charge carriers upon irradiation by the light beam in forming the electrical signal, wherein the channel layer is formed with defects trap states for trapping a portion of the charge carriers such that intensity information of the light beam is memorized by the defects trap states, and wherein the channel layer is positioned in proximity to the gate such that a gate-source voltage between the gate and the source directs the defects trap states to de-trap the trapped portion of the charge carriers over time or to further trap an additional portion of the charge carriers over time, allowing the individual phototransistor to exhibit a time-dependent excitation or inhibition effect on the electrical signal to thereby enable the imaging sensor to mimic visual adaptation of human vision in imaging the image;
one or more gate drivers for providing respective gate-source voltages to the plurality of phototransistors; one or more analog-to-digital converters (ADCs) for digitizing respective electrical signals received from the plurality of phototransistors to form a plurality of digitized electrical signals; and one or more digital computing processors configured to:
determine the respective gate-source voltages according to the plurality of digitized electrical signals; and
control the one or more gate drivers to provide the determined respective gate-source voltages to the plurality of phototransistors for causing the imaging sensor to mimic visual adaptation in imaging the image.

2 . The bio-inspired imaging device of claim 1 , wherein the one or more digital computing processors are further configured to control the one or more gate drivers to provide:
a positive gate-source voltage to the individual phototransistor if photopic adaptation is mimicked in imaging the image; and a negative gate-source voltage to the individual phototransistor if scotopic adaptation is mimicked in imaging the image.

3 . The bio-inspired imaging device of claim 1 , wherein:
the respective gate-source voltages applied to the plurality of phototransistors at each time instant are same, allowing reduced complexity implementation of the one or more gate drivers.

4 . The bio-inspired imaging device of claim 1 , wherein the atomically-thin layer consists of one or two monolayers of the 2D semiconductor material.

5 . The bio-inspired imaging device of claim 1 , wherein the 2D semiconductor material is selected from transition metal dichalcogenides (TMDs), transition metal oxides (TMOs), MXenes, boron phosphide (BP), nanoribbon graphene and carbon nanotubes.

6 . The bio-inspired imaging device of claim 1 , wherein the 2D semiconductor material is molybdenum disulfide (MoS 2 ).

7 . The bio-inspired imaging device of claim 1 , further comprising:
a dielectric layer sandwiched between the gate and the channel layer.

8 . The bio-inspired imaging device of claim 7 , wherein the dielectric layer is substantially composed of a material selected from aluminum oxide (Al 2 O 3 ), hafnium dioxide (HfO 2 ), zirconium dioxide (ZrO 2 ) and hexagonal boron nitride (h-BN).

9 . The bio-inspired imaging device of claim 7 , wherein the plurality of phototransistors is formed on a substrate, the gate being located on the substrate.

10 . The bio-inspired imaging device of claim 9 , wherein the source and drain are made of metal, indium tin oxide or graphene.

11 . The bio-inspired imaging device of claim 9 , wherein the gate is made of metal, indium tin oxide or graphene.

12 . The bio-inspired imaging device of claim 1 , wherein the plurality of phototransistors is arranged as a rectangular array in the imaging sensor for capturing the image.

13 . The bio-inspired imaging device of claim 1 , wherein the imaging sensor further comprises:
a plurality of optical components for optically processing respective light beams of the image before the respective light beams reach the plurality of phototransistors, the optical components including a microlens located in proximity to the individual phototransistor for focusing the light beam onto the individual phototransistor.

14 . The bio-inspired imaging device of claim 13 , wherein the plurality of optical components further includes a color filter located in proximity to the individual phototransistor for enabling the individual phototransistor to extract color information of the light beam.

15 . The bio-inspired imaging device of claim 13 , wherein the plurality of optical components further includes an infrared- (IR-) stop filter overlying the plurality of phototransistors for filtering off IR components of the respective light beams before the image is imaged by the plurality of phototransistors.

16 . The bio-inspired imaging device of claim 1 ,
wherein the one or more digital computing processors are further configured to:
receive the plurality of digitized electrical signals obtained at a time instant to form an image signal of the image at the time instant; and
collect respective image signals obtained at a plurality of successive time instants to form a sequence of image signals.

17 . The bio-inspired imaging device of claim 16 , wherein:
the one or more digital computing processors are further configured to adjust the respective gate-source voltages applied to the plurality of phototransistors according to an incident power density of the light beam of an individual image in an optical-image sequence for realizing Weber's law in generating the sequence of image signals from the optical-image sequence.

Assignees

• Univ Hong Kong Polytechnic

Inventors

• Chai yang
• Liao Fuyou

Classifications

• H10F77/123

  comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe · CPC title

• H10F39/8053

  Colour filters · CPC title

• H10F30/2877

  Field-effect phototransistors having PN heterojunction gates · CPC title

• H10F30/282

  Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors · CPC title

• H10F77/143

  comprising quantum structures · CPC title