Lateral high voltage semiconductor device and method for forming a lateral high voltage semiconductor device

Patent metadata

Field	Value
Publication number	US-12557360-B2
Application number	US-202418897009-A
Country	US
Kind code	B2
Filing date	Sep 26, 2024
Priority date	Sep 28, 2023
Publication date	Feb 17, 2026
Grant date	Feb 17, 2026

Abstract

A lateral high voltage semiconductor device includes a semiconductor substrate with a frontside and a semiconductor element. The semiconductor element includes: a first semiconductor region of a first conductivity type formed within the semiconductor substrate; a second semiconductor region formed within the semiconductor substrate and spaced apart from the first semiconductor region in a first lateral direction parallel to the frontside; and an extension region adjoining the second semiconductor region. The semiconductor device is configured to control a load current between the first and second semiconductor regions. The extension region extends along the frontside of the semiconductor substrate and includes at least one mesa protruding at the frontside of the semiconductor substrate.

First claim

What is claimed is:

1 . A lateral high voltage semiconductor device, comprising:
a semiconductor substrate with a frontside; a semiconductor element comprising:
a first semiconductor region of a first conductivity type formed within the semiconductor substrate;
a second semiconductor region formed within the semiconductor substrate and spaced apart from the first semiconductor region in a first lateral direction parallel to the frontside; and
an extension region adjoining the second semiconductor region,
wherein the semiconductor device is configured to control a load current between the first semiconductor region and the second semiconductor region, wherein the extension region extends along the frontside of the semiconductor substrate and comprises at least one mesa protruding at the frontside of the semiconductor substrate.

2 . The lateral high voltage semiconductor device of claim 1 , further comprising:
at least one field plate structure at least partly above a respective one of the at least one mesa; and an electrical connection connecting the at least one field plate structure to the respective mesa.

3 . The lateral high voltage semiconductor device of claim 2 , further comprising a high voltage routing layer above the at least one field plate structure.

4 . The lateral high voltage semiconductor device of claim 2 , wherein at least 50% or even at least 70% of the semiconductor element is laterally overlapped by the at least on field plate structure.

5 . The lateral high voltage semiconductor device of claim 1 , further comprising a first insulating layer laterally adjacent to the at least one mesa on both sides of the at least one mesa.

6 . The lateral high voltage semiconductor device of claim 1 , further comprising at least one field ring at least partly arranged within the at least one mesa.

7 . A lateral high voltage semiconductor device, comprising:
a semiconductor substrate with a frontside; a semiconductor element comprising:
a first semiconductor region of a first conductivity type formed within the semiconductor substrate;
a second semiconductor region spaced apart from the first semiconductor region in a first lateral direction parallel to the frontside; and
an extension region adjoining the second semiconductor region,
wherein the semiconductor device is configured to control a lateral load current between the first semiconductor region and the second semiconductor region;
a first field plate structure in electrical connection to the first semiconductor region; and a second field plate structure in electrical connection to the second semiconductor region, wherein at least one of the first and the second field plate structure comprises a stack of at least three interconnected field plates above each other, wherein at least one of the field plates of the stack comprises polysilicon and at least one of the field plates of the stack comprises a metal.

8 . The lateral high voltage semiconductor device of claim 7 , further comprising:
a third field plate structure in electrical connection to a first portion of the extension region; and a fourth field plate structure in electrical connection to a second portion of the extension region, wherein the third field plate structure is connected to the first portion of the extension region at a side of the third field plate structure closer to the first semiconductor region along first lateral direction than a centroid of the third field plate structure, wherein the fourth field plate structure is connected to the second portion of the extension region at a side of the fourth field plate structure closer the second semiconductor region along first lateral direction than a centroid of the fourth field plate structure.

9 . The lateral high voltage semiconductor device of claim 7 , wherein the extension region extends along the frontside of the semiconductor substrate and comprises at least one mesa protruding at the frontside of the semiconductor substrate.

10 . The lateral high voltage semiconductor device of claim 9 , further comprising a first insulating layer laterally adjacent to the at least one mesa on both sides of the at least one mesa.

11 . The lateral high voltage semiconductor device of claim 10 , wherein the first insulating layer has a same vertical extension as the at least one mesa and/or a top surface of the first insulating layer and a top surface of the mesa form an at least substantially flat surface.

12 . The lateral high voltage semiconductor device of claim 10 , wherein portions of the first insulating layer are arranged:
in-between the at least one mesa and the first semiconductor region and the in-between the at least one mesa and the first semiconductor region, and/or in-between at least two separate ones of the at least one mesa.

13 . The lateral high voltage semiconductor device of claim 10 , further comprising at least one second insulating layer above the first insulating layer and the at least one mesa.

14 . The lateral high voltage semiconductor device of claim 9 , further comprising at least one field ring at least partly arranged within the at least one mesa.

15 . The lateral high voltage semiconductor device of claim 7 , wherein each electrical connection is configured to provide a low ohmic contact between the corresponding field plate structure and the respective portion of the extension region.

16 . The lateral high voltage semiconductor device of claim 7 , wherein each electrical connection comprises a rectifying junction between the field plate structure and the mesa.

17 . The lateral high voltage semiconductor device of claim 16 , wherein the rectifying junction comprises a first portion and a second portion, wherein a joint face between the first and second portions forms the rectifying junction, and wherein the mesa is patterned laterally into the first and second portions.

18 . The lateral high voltage semiconductor device claim 16 , wherein:
the mesa is patterned along the first lateral direction resulting in the joint face extending in a second lateral direction perpendicular to the first lateral direction; or the mesa is patterned along the second lateral direction resulting in the joint face extending in the first lateral direction.

19 . The lateral high voltage semiconductor device of claim 7 , wherein the semiconductor element further comprises:
a body region of a second conductivity type laterally adjoining the first semiconductor region and the extension region; and a gate structure configured to control the lateral load current between the first and the second semiconductor region.

20 . The lateral high voltage semiconductor device of claim 7 , wherein the first semiconductor region is arranged close to or at the frontside, and/or the second semiconductor region is arranged close to or at the frontside.

21 . The lateral high voltage semiconductor device of claim 7 , further comprising a backside insulating layer arranged at a backside of the semiconductor substrate that is opposite to the frontside.

22 . The lateral high voltage semiconductor device of claim 7 , further comprising at least one insulating trench electrically insulating the semiconductor element from a further semiconductor element neighboring the semiconductor element on the same semiconductor substrate.

23 . The lateral high voltage semiconductor device of claim 7 , further comprising:
a backside ins

Assignees

• Infineon Technologies Austria Ag

Inventors

• Müller-Meskamp Lars
• Rudolf Ralf
• Hirler Franz
• Geisenhof Fabian
• Peterhänsel Tom
• Winzer Annett
• Priefert Dirk
• Künzig Thomas
• Winterer Felix Simon
• Manger Dirk

Classifications

• H10D64/112

  comprising multiple field plate segments · CPC title

• H10D62/107

  Buried supplementary regions, e.g. buried guard rings  (multi-RESURF H10D62/111) · CPC title

• H10D30/0281

  of lateral DMOS [LDMOS] FETs · CPC title

• H10D30/65

  Lateral DMOS [LDMOS] FETs · CPC title

• H10D62/127 Primary

  of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs · CPC title