Batch type substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-12555755-B2
Application number	US-202318116840-A
Country	US
Kind code	B2
Filing date	Mar 2, 2023
Priority date	Mar 4, 2022
Publication date	Feb 17, 2026
Grant date	Feb 17, 2026

Abstract

Provided is a batch type substrate processing apparatus that generates plasma by a plurality of electrodes to perform a processing process on a substrate. The batch type substrate processing apparatus includes a reaction tube, a plurality of electrodes, and an electrode protection part. The plurality of electrodes includes first and second power supply electrodes spaced apart from each other and first and second ground electrodes provided between the first power supply electrode and the second power supply electrode to correspond to the first power supply electrode and the second power supply electrode, respectively. The electrode protection part includes a plurality of first electrode protection tubes which have inner spaces in which the first and second power supply electrodes are inserted, respectively, a plurality of second electrode protection tubes which have inner spaces in which the first and second ground electrodes are inserted, respectively, and a plurality of bridge parts configured to connect upper ends of the first electrode protection tube and the second electrode protection tube, which face each other, to each other, respectively.

First claim

What is claimed is:

1 . A batch type substrate processing apparatus comprising:
a reaction tube configured to provide a processing space in which a plurality of substrates are accommodated; a plurality of electrodes extending in a longitudinal direction of the reaction tube and disposed along a circumferential direction of the reaction tube; and an electrode protection part configured to protect the plurality of electrodes, wherein the plurality of electrodes comprise:
first and second power supply electrodes spaced apart from each other; and
first and second ground electrodes provided between the first power supply electrode and the second power supply electrode to correspond to the first power supply electrode and the second power supply electrode, respectively, and
the electrode protection part comprises:
a plurality of first electrode protection tubes, each of which has a closed upper end and an opened lower end, and which have inner spaces in which the first and second power supply electrodes are inserted, respectively;
a plurality of second electrode protection tubes, each of which has a closed upper end and an opened lower end, and which have inner spaces in which the first and second ground electrodes are inserted, respectively; and
a plurality of bridge parts configured to connect upper ends of the first electrode protection tube and the second electrode protection tube, which face each other, to each other, respectively,
wherein the first ground electrode is spaced apart from the first power supply electrode, the second ground electrode is spaced apart from the second power supply electrode, the first and second ground electrodes are spaced apart from each other, and a spaced distance between the first and second ground electrodes is less than or equal to each of a spaced distance between the first power supply electrode and the first ground electrode and a spaced distance between the second power supply electrode and the second ground electrode.

2 . The batch type substrate processing apparatus of claim 1 , wherein
the plurality of electrodes are configured to generate capacitively coupled plasma (CCP) in a spaced space between the first power supply electrode and the first ground electrode and a spaced space between the second power supply electrode and the second ground electrode.

3 . The batch type substrate processing apparatus of claim 1 , wherein the first electrode protection tube and the second electrode protection tube, which face each other, are connected to each other by the bridge parts to communicate with each other,
wherein the batch type substrate processing apparatus further comprises: a cooling gas supply part configured to supply a cooling gas into the first electrode protection tube and the second electrode protection tube, which face each other; and a cooling gas discharge part configured to discharge the cooling gas from the first electrode protection tube and the second electrode protection tube, which face each other, so as to generate a flow of the cooling gas.

4 . The batch type substrate processing apparatus of claim 3 , wherein the cooling gas supply part is connected to each of the plurality of second electrode protection tubes, and
the cooling gas discharge part is connected to each of the plurality of first electrode protection tubes.

5 . The batch type substrate processing apparatus of claim 3 , further comprising:
a gas supply sealing cap which is connected to any one electrode protection tube of the first electrode protection tube and the second electrode protection tube, which face each other, and in which an inflow port through which the cooling gas is supplied is provided in a sidewall of an inner space communicating with the any one electrode protection tube; and a gas discharge sealing cap which is connected to the other electrode protection tube of the first electrode protection tube and the second electrode protection tube, which face each other, and in which an exhaust port through which the cooling gas is discharged is provided in a sidewall of an inner space communicating with the other electrode protection tube.

6 . The batch type substrate processing apparatus of claim 3 , wherein the cooling gas comprises an inert gas.

7 . The batch type substrate processing apparatus of claim 1 , further comprising:
a high frequency power source part configured to supply high frequency power; and a power distribution part provided between the high frequency power source part and the first and second power supply electrodes and configured to distribute the high frequency power supplied from the high frequency power source part so as to provide the distributed high frequency power to each of the first and second power supply electrodes.

8 . The batch type substrate processing apparatus of claim 7 , wherein the power distribution part comprises a variable capacitor provided between a distribution point, at which the high frequency power is distributed to each of the first and second power supply electrodes, and at least one of the first and second power supply electrodes.

9 . The batch type substrate processing apparatus of claim 1 , further comprising a control part configured to selectively adjust the high frequency power applied to each of the first and second power supply electrodes.

Assignees

• Eugene Technology Co Ltd

Inventors

• Jo Jeong Hee
• Kim Chang Dol

Classifications

• H01J37/32091

  the radio frequency energy being capacitively coupled to the plasma · CPC title

• H01J2237/002

  Cooling arrangements · CPC title

• H01J37/3244 Primary

  Gas supply means · CPC title

• H01J2237/332

  Coating · CPC title

• H01J37/32568

  Relative arrangement or disposition of electrodes; moving means · CPC title