Grain-oriented electrical steel sheet and method for producing same
US-2022042153-A1 · Feb 10, 2022 · US
US12553136B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12553136-B2 |
| Application number | US-202017421762-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 16, 2020 |
| Priority date | Jan 16, 2019 |
| Publication date | Feb 17, 2026 |
| Grant date | Feb 17, 2026 |
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A grain-oriented electrical steel sheet includes a base steel sheet which contains Si and Mn, an intermediate layer which is disposed on a surface of the base steel sheet and contains a silicon oxide as a main component, and an insulation coating which is disposed on a surface of the intermediate layer. A final-annealed film is not substantially present on a surface of the base steel sheet. In a surface layer region of grain-oriented electrical steel sheet, a Mn-depletion layer having a valley portion of a Mn content in which a Mn content is lower than an average Mn content of the base steel sheet in a region deeper than the surface layer region is provided, and a Mn-rich layer having a peak portion of a Mn content in which a Mn content is higher than that in the valley portion of the Mn content is provided in a region closer to a surface of the insulation coating than the Mn-depletion layer.
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The invention claimed is: 1 . A grain-oriented electrical steel sheet, comprising: a base steel sheet, wherein the base steel sheet has a composition comprising, in mass %: Si: 0.50% to 7.00%; Mn: 0.05% to 1.00%; C: 0.005% or less, N: 0.0050% or less, and optionally comprising, acid-soluble Al: 0.0065% or less; S and Se: 0.001% or less in total; Bi: 0.010% or less; B: 0.0080% or less; Ti: 0.015% or less; Nb: 0.020% or less; V: 0.015% or less; Sn: 0.50% or less; Sb: 0.50% or less; Cr: 0.30% or less; Cu: 0.40% or less; P: 0.50% or less; Ni: 1.00% or less; Mo: 0.10% or less; and a remainder of Fe and impurities; an intermediate layer which is disposed on a surface of the base steel sheet, the intermediate layer comprising an Fe content of less than 30 atomic %, a P content of less than 5 atomic %, a Si content of 20 atomic % or more and less than 50 atomic %, an O content of 50 atomic % or more and less than 80 atomic %, and a Mg content of 10 atomic % or less; and an insulation coating which is disposed on a surface of the intermediate layer, wherein a final-annealed film is not present on a surface of the base steel sheet, and in a surface layer region, a Mn-depleted layer having a valley portion of a Mn content in which a Mn content is lower than an average Mn content of the base steel sheet in a region deeper than the surface layer region is provided, and a Mn-rich layer having a peak portion of a Mn content in which a Mn content is higher than that in the valley portion of the Mn content is provided in a region closer to a surface of the insulation coating than the Mn-depleted layer, and wherein: in a profile for a depth of a Mn standardized optical emission intensity calculated using the following Equations 1-1 and 1-2 from data of an optical emission intensity and a measurement time of Mn measured by a glow-discharge optical emission analysis for the grain-oriented electrical steel sheet, when a point having a maximum depth among points having a Mn standardized optical emission intensity of 0.9 is defined as a point A, the surface layer region is a region from the surface of the insulation coating to a depth of the point A, a point B at which the Mn standardized optical emission intensity is 0.50 or more and is the maximum is located in the surface layer region, a point C at which the Mn standardized optical emission intensity is the minimum is located between the point A and the point B in the surface layer region, the valley portion of the Mn content is a region having a depth of 0.1 μm before and after the point C, the peak portion of the Mn content is a region having a depth of 0.1 μm before and after the point B, and when an intermediate depth between the depth of the point B and the depth of the point C is defined as a boundary depth, and the Mn standardized optical emission intensity at the boundary depth is defined as a boundary Mn standardized optical emission intensity, the Mn-depleted layer is a region from the boundary depth to the depth of the point A, and the Mn-rich layer is present on the surface side of the insulation coating from the point B and is a region from a depth of a point having the same Mn standardized optical emission intensity as the boundary Mn standardized optical emission intensity to the boundary depth, depth of d μm of each of measurement points=(measurement depth after measurement end, unit μm)/(time until measurement end, unit seconds)×(measurement time of measurement point, unit seconds), Equation 1-1: Mn standardized optical emission intensity at depth of d μm=(optical emission intensity of Mn at depth of d μm)/(average optical emission intensity of Mn at depth of 25 μm to 30 μm). Equation 1-2: 2 . The grain-oriented electrical steel sheet according to claim 1 , wherein the point B and the point C in the surface layer region satisfy a relationship of the following Equation 2, (Mn standardized optical emission intensity at point B )−(Mn standardized optical emission intensity at point C )≥0.05. Equation 2: 3 . The grain-oriented electrical steel sheet according to claim 1 , wherein a distance between the point A and the point B in a depth direction calculated from the following Equation 3 is 0 to 10.0 μm, distance between point A and point B in depth direction in unit μm=(depth at point B , unit μm)−(depth at point A , unit μm). Equation 3: 4 . The grain-oriented electrical steel sheet according to claim 1 , wherein: the insulation coating contains no Si, in a profile for a depth of a Si standardized optical emission intensity calculated using the following Equations 2-1 and 2-2 from data of an optical emission intensity and a measurement time of Si measured by the glow-discharge optical emission analysis for the grain-oriented electrical steel sheet, the surface layer region has a point D at which the Si standardized optical emission intensity is the maximum, and a distance between the point B and the point D in the depth direction calculated from the following Equation 4 is 0 to 1.0 μm, depth d μm of each of measurement points=(measurement depth after measurement end, unit μm)/(time until measurement end, unit seconds)×(measurement time of measurement point, unit seconds), Equation 2-1: Si standardized optical emission intensity at depth of d μm=(optical emission intensity of Si at depth of d μm)/(average optical emission intensity of Si at depth of 25 μm to 30 μm), Equation 2-2: distance in unit μm between point B and point D in depth direction=(depth at point B , unit μm)−(depth at point D , unit μm). Equation 4: 5 . The grain-oriented electrical steel sheet according to claim 1 , wherein: the insulation coating contains Si, when, in a profile for a depth of a Si standardized optical emission intensity calculated using the following Equations 2-1 and 2-2 from data of an optical emission intensity and a measurement time of Si measured by the glow-discharge optical emission analysis for the grain-oriented electrical steel sheet, and a profile for a depth of a Si difference quotient calculated using the following Equation 5-1, in the surface layer region, in a region in which the Si difference quotient is a negative value, a point at which the Si difference quotient is the minimum and the Si difference quotient is −0.5 or less is defined as a point V, and a point at which the Si difference quotient is the maximum, is present on the surface side of the insulation coating from the point V, and is closest to the point V is defined as a point Z, and in a profile for a depth of a Mn difference quotient calculated from the Mn standardized optical emission intensity using the following Equation 5-2, in the surface layer region, a point at which the Mn difference quotient is maximum is defined as a point Y, and a point at which the Mn difference quotient is minimum is defined as a point X, and a point which is present in a region from the point X to the point Y and at which the Mn difference quotient is 0 is defined as a point W, a distance between the point W and the point Z in the depth direction calculated from the following Equation 6 is 0 to 1.0 μm, and the Mn difference quotient at the point Y and the Mn difference quotient at the point X satisfy a relationship of the following Equation 7, depth d μm of each of measurement points=(measurement depth after measurement end, unit μm)/(time until measurement end, unit seconds)×(measurement time of measurement point, unit seconds), Equation 2-1: Si standardized optical emission intensity at depth of d μm=(optical emission intensity of Si at depth of d μm)/(average optical emission intensity of Si at depth of 25 μm to 30 μm), Equation 2-2: Si difference quotient
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